Página 5 - Toshiba Semiconductor and Storage Produtos - Transistores - Bipolares (BJT) - Simples

Nº de peças	Fabricante	Descrição	pacote	Estoque	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC6076(TE16L1,NV)	Toshiba Semiconductor and Storage	TRANS NPN 80V 3A PW MOLD Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque6.304	3A	80V	500mV @ 100mA, 1A	1µA (ICBO)	180 @ 500mA, 2V	10W	150MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PW-MOLD
2SA1588-O,LF	Toshiba Semiconductor and Storage	TRANS PNP 30V 0.5A USM Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacote: SC-70, SOT-323	Estoque5.152	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 100mA, 1V	100mW	200MHz	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC2712-BL,LF	Toshiba Semiconductor and Storage	TRANSISTOR NPN 50V 150MA S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: TO-236-3, SC-59, SOT-23-3	Estoque6.256	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	150mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SA1832-Y,LF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SSM Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacote: SC-75, SOT-416	Estoque6.000	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
2SA1832-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SSM Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacote: SC-75, SOT-416	Estoque3.504	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
TTC004B,Q	Toshiba Semiconductor and Storage	TRANS NPN 160V 1.5A TO126N Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	pacote: TO-225AA, TO-126-3	Estoque18.000	1.5A	160V	500mV @ 50mA, 500mA	100nA (ICBO)	140 @ 100mA, 5V	10W	100MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126N
2SA1588-Y,LF	Toshiba Semiconductor and Storage	TRANS PNP 30V 0.5A USM Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacote: SC-70, SOT-323	Estoque4.928	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 100mA, 1V	100mW	200MHz	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC5200N(S1,E,S)	Toshiba Semiconductor and Storage	TRANS NPN 230V 15A TO-3PL Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	pacote: TO-3P-3, SC-65-3	Estoque5.648	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
2SC3324-BL(TE85L,F	Toshiba Semiconductor and Storage	TRANS NPN 120V 0.1A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	pacote: TO-236-3, SC-59, SOT-23-3	Estoque4.880	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	350 @ 2mA, 6V	150mW	100MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236
2SC5242-O(Q)	Toshiba Semiconductor and Storage	TRANS NPN 230V 15A TO-3PN Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 130W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	pacote: TO-3P-3, SC-65-3	Estoque8.448	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	130W	30MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
2SC6026CT-Y(TPL3)	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.1A CST3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacote: SC-101, SOT-883	Estoque3.376	100mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	60MHz	150°C (TJ)	Surface Mount	SC-101, SOT-883	CST3
2SA1182-Y,LF	Toshiba Semiconductor and Storage	TRANS PNP 30V 0.5A S-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: TO-236-3, SC-59, SOT-23-3	Estoque4.256	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 100mA, 1V	150mW	200MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SA1587-BL,LF	Toshiba Semiconductor and Storage	TRANS PNP 120V 0.1A USM Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacote: SC-70, SOT-323	Estoque2.640	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	350 @ 2mA, 6V	100mW	100MHz	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SC4738-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SSM Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacote: SC-75, SOT-416	Estoque25.752	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
TBC847B,LM	Toshiba Semiconductor and Storage	X34 PB-F SOT-23 TRANSISTOR FOR L Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 320mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacote: TO-236-3, SC-59, SOT-23-3	Estoque73.800	150mA	50V	400mV @ 100mA, 5mA	30nA (ICBO)	200 @ 2mA, 5V	320mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
TTA004B,Q	Toshiba Semiconductor and Storage	TRANS PNP 160V 1.5A TO126N Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	pacote: TO-225AA, TO-126-3	Estoque7.992	1.5A	160V	500mV @ 50mA, 500mA	100nA (ICBO)	140 @ 100mA, 5V	10W	100MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126N
TBC857B,LM	Toshiba Semiconductor and Storage	X34 PB-F SOT-23 TRANSISTOR FOR L Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Power - Max: 320mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacote: TO-236-3, SC-59, SOT-23-3	Estoque24.456	150mA	50V	650mV @ 100mA, 5mA	30nA (ICBO)	210 @ 2mA, 5V	320mW	80MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
TTA1943(Q)	Toshiba Semiconductor and Storage	TRANS PNP 230V 15A TO-3PL Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	pacote: TO-3PL	Estoque7.152	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3PL	TO-3P(L)
TTC5200(Q)	Toshiba Semiconductor and Storage	TRANS NPN 230V 15A TO-3PL Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	pacote: TO-3PL	Estoque4.480	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3PL	TO-3P(L)
2SA1943N(S1,E,S)	Toshiba Semiconductor and Storage	TRANS PNP 230V 15A TO-3PN Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	pacote: TO-3P-3, SC-65-3	Estoque5.248	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
2SA1962-O(Q)	Toshiba Semiconductor and Storage	TRANS PNP 230V 15A TO-3PN Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 130W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	pacote: TO-3P-3, SC-65-3	Estoque9.948	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	130W	30MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
2SC5200-O(Q)	Toshiba Semiconductor and Storage	TRANS NPN 230V 15A TO-3PL Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	pacote: TO-3PL	Estoque304.956	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3PL	TO-3P(L)
2SA1943-O(Q)	Toshiba Semiconductor and Storage	TRANS PNP 230V 15A TO-3PL Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	pacote: TO-3PL	Estoque162.000	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	150W	30MHz	150°C (TJ)	Through Hole	TO-3PL	TO-3P(L)
2SC5232BTE85LF	Toshiba Semiconductor and Storage	TRANS NPN 12V 0.5A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 130MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	pacote: TO-236-3, SC-59, SOT-23-3	Estoque3.072	500mA	12V	250mV @ 10mA, 200mA	100nA (ICBO)	500 @ 10mA, 2V	150mW	130MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
2SC3324GRTE85LF	Toshiba Semiconductor and Storage	TRANS NPN 120V 0.1A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	pacote: TO-236-3, SC-59, SOT-23-3	Estoque2.368	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	150mW	100MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236
2SB906-Y(TE16L1,NQ	Toshiba Semiconductor and Storage	TRANS PNP 60V 3A PW-MOLD Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 9MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque21.582	3A	60V	1.7V @ 300mA, 3A	100µA (ICBO)	100 @ 500mA, 5V	1W	9MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PW-MOLD
2SA1162-O,LF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A S-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: TO-236-3, SC-59, SOT-23-3	Estoque26.916	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	150mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SC4944-GR(TE85L,F	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A USV Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	pacote: 5-TSSOP, SC-70-5, SOT-353	Estoque6.720	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	80MHz	125°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
2SA2154CT-GR,L3F	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.1A Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacote: SC-101, SOT-883	Estoque6.432	100mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SC-101, SOT-883	CST3
2SA1588-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 30V 0.5A USM Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacote: SC-70, SOT-323	Estoque3.440	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 100mA, 1V	100mW	200MHz	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM

2SC6076(TE16L1,NV)

Toshiba Semiconductor and Storage

TRANS NPN 80V 3A PW MOLD

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque6.304

3A

80V

500mV @ 100mA, 1A

1µA (ICBO)

180 @ 500mA, 2V

10W

150MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PW-MOLD

2SA1588-O,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 100mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacote: SC-70, SOT-323

Estoque5.152

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 100mA, 1V

100mW

200MHz

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC2712-BL,LF

Toshiba Semiconductor and Storage

TRANSISTOR NPN 50V 150MA S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

Estoque6.256

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

150mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SA1832-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacote: SC-75, SOT-416

Estoque6.000

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

2SA1832-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacote: SC-75, SOT-416

Estoque3.504

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

TTC004B,Q

Toshiba Semiconductor and Storage

TRANS NPN 160V 1.5A TO126N

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126N

pacote: TO-225AA, TO-126-3

Estoque18.000

1.5A

160V

500mV @ 50mA, 500mA

100nA (ICBO)

140 @ 100mA, 5V

10W

100MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126N

2SA1588-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 100mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacote: SC-70, SOT-323

Estoque4.928

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 100mA, 1V

100mW

200MHz

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC5200N(S1,E,S)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

pacote: TO-3P-3, SC-65-3

Estoque5.648

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

2SC3324-BL(TE85L,F

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

pacote: TO-236-3, SC-59, SOT-23-3

Estoque4.880

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

350 @ 2mA, 6V

150mW

100MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236

2SC5242-O(Q)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PN

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 130W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

pacote: TO-3P-3, SC-65-3

Estoque8.448

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

130W

30MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

2SC6026CT-Y(TPL3)

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacote: SC-101, SOT-883

Estoque3.376

100mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

60MHz

150°C (TJ)

Surface Mount

SC-101, SOT-883

CST3

2SA1182-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A S-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

Estoque4.256

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 100mA, 1V

150mW

200MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SA1587-BL,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacote: SC-70, SOT-323

Estoque2.640

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

350 @ 2mA, 6V

100mW

100MHz

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

2SC4738-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacote: SC-75, SOT-416

Estoque25.752

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

TBC847B,LM

Toshiba Semiconductor and Storage

X34 PB-F SOT-23 TRANSISTOR FOR L

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 320mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacote: TO-236-3, SC-59, SOT-23-3

Estoque73.800

150mA

50V

400mV @ 100mA, 5mA

30nA (ICBO)

200 @ 2mA, 5V

320mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

TTA004B,Q

Toshiba Semiconductor and Storage

TRANS PNP 160V 1.5A TO126N

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126N

pacote: TO-225AA, TO-126-3

Estoque7.992

1.5A

160V

500mV @ 50mA, 500mA

100nA (ICBO)

140 @ 100mA, 5V

10W

100MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126N

TBC857B,LM

Toshiba Semiconductor and Storage

X34 PB-F SOT-23 TRANSISTOR FOR L

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Power - Max: 320mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacote: TO-236-3, SC-59, SOT-23-3

Estoque24.456

150mA

50V

650mV @ 100mA, 5mA

30nA (ICBO)

210 @ 2mA, 5V

320mW

80MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

TTA1943(Q)

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PL

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

pacote: TO-3PL

Estoque7.152

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3PL

TO-3P(L)

TTC5200(Q)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

pacote: TO-3PL

Estoque4.480

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3PL

TO-3P(L)

2SA1943N(S1,E,S)

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PN

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

pacote: TO-3P-3, SC-65-3

Estoque5.248

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

2SA1962-O(Q)

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PN

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 130W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

pacote: TO-3P-3, SC-65-3

Estoque9.948

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

130W

30MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

2SC5200-O(Q)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

pacote: TO-3PL

Estoque304.956

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3PL

TO-3P(L)

2SA1943-O(Q)

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PL

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)

pacote: TO-3PL

Estoque162.000

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

150W

30MHz

150°C (TJ)

Through Hole

TO-3PL

TO-3P(L)

2SC5232BTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 12V 0.5A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 130MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

pacote: TO-236-3, SC-59, SOT-23-3

Estoque3.072

500mA

12V

250mV @ 10mA, 200mA

100nA (ICBO)

500 @ 10mA, 2V

150mW

130MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

2SC3324GRTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

pacote: TO-236-3, SC-59, SOT-23-3

Estoque2.368

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

200 @ 2mA, 6V

150mW

100MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236

2SB906-Y(TE16L1,NQ

Toshiba Semiconductor and Storage

TRANS PNP 60V 3A PW-MOLD

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 9MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque21.582

3A

60V

1.7V @ 300mA, 3A

100µA (ICBO)

100 @ 500mA, 5V

1W

9MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PW-MOLD

2SA1162-O,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

Estoque26.916

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

150mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SC4944-GR(TE85L,F

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USV

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

pacote: 5-TSSOP, SC-70-5, SOT-353

Estoque6.720

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

80MHz

125°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

2SA2154CT-GR,L3F

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacote: SC-101, SOT-883

Estoque6.432

100mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SC-101, SOT-883

CST3

2SA1588-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 100mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacote: SC-70, SOT-323

Estoque3.440

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 100mA, 1V

100mW

200MHz

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM