Página 70 - Taiwan Semiconductor Corporation Produtos

Nº de peças	Fabricante	Descrição	pacote	Estoque
MCR100-4 A1G	Taiwan Semiconductor Corporation	THYRISTOR-SCR, 200V, TO-92 Voltage - Off State: 200V Voltage - Gate Trigger (Vgt) (Max): 800mV Current - Gate Trigger (Igt) (Max): 200µA Voltage - On State (Vtm) (Max): 1.7V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): 800mA Current - Hold (Ih) (Max): 5mA Current - Off State (Max): 10µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Estoque2.256
BZD27C18PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 17.95V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacote: DO-219AB	Estoque2.000
BZD27C130P RQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 132.5V Tolerance: ±6.41% Power - Max: 1W Impedance (Max) (Zzt): 300 Ohms Current - Reverse Leakage @ Vr: 1µA @ 100V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacote: DO-219AB	Estoque5.536
1SMA160Z R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 160V, 1000MW, %, D Voltage - Zener (Nom) (Vz): 160V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 1100 Ohms Current - Reverse Leakage @ Vr: 1µA @ 121.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	pacote: DO-214AC, SMA	Estoque4.144
1N4756AHR1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 47V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 5µA @ 35.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	pacote: DO-204AL, DO-41, Axial	Estoque5.680
TSZL52C7V5 RWG	Taiwan Semiconductor Corporation	DIODE, ZENER, 7.5V, 200MW, 5%, 1 Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 100nA @ 5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005	pacote: 1005 (2512 Metric)	Estoque3.760
BZT52B27S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 27V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 45nA @ 18.9V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	pacote: SC-90, SOD-323F	Estoque4.816
BZX585B20 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 20V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 45nA @ 14V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	pacote: SC-79, SOD-523	Estoque6.000
ABS20M RGG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	pacote: 4-SMD, Gull Wing	Estoque7.920
TPC816D C9G	Taiwan Semiconductor Corporation	OPTOISO 5KV TRANS 4DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 300% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): - Rise / Fall Time (Typ): 4µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 70V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 200mV Operating Temperature: -30°C ~ 100°C Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque4.032
BZY55B10	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 2%, SMAL Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	pacote: -	Request a Quote
SFT11G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote
S8JC-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque171
MTZJ3V9SB	Taiwan Semiconductor Corporation	DO-34, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 3.9 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	pacote: -	Request a Quote
BZT52C51K	Taiwan Semiconductor Corporation	SOD-523F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 51 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 180 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 39 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	pacote: -	Request a Quote
TSS42U	Taiwan Semiconductor Corporation	603, 30V, 0.2A, SCHOTTKY DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 30 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -55°C ~ 125°C	pacote: -	Request a Quote
TS10KL100H	Taiwan Semiconductor Corporation	10A, 1000V, STANDARD BRIDGE RECT Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJL Supplier Device Package: KBJL	pacote: -	Estoque6.000
BAT54S-RF	Taiwan Semiconductor Corporation	SOT-23, 30V, 0.2A, SCHOTTKY DIOD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 125°C	pacote: -	Request a Quote
RDBLS207G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 2A DBLS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	pacote: -	Estoque18.000
TSPB15U100S	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 15A SMPC4.0 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.0 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque62.235
BZY55C3V3	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 3.3 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	pacote: -	Request a Quote
TST20U60CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote
1PGSMB5934HR5G	Taiwan Semiconductor Corporation	DIODE ZENER 24V 3W DO214AA Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 19 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	pacote: -	Request a Quote
TS2937CZ33	Taiwan Semiconductor Corporation	0.5A 3.3V ULTRA LOW DROPOUT VOLT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 26V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 25 mA PSRR: - Control Features: Current Limit Protection Features: Over Current, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacote: -	Request a Quote
S1J-KR2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Request a Quote
1N5398GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque21.000
TSM7NC65CF	Taiwan Semiconductor Corporation	650V, 7A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44.6W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote
SRAS2060H	Taiwan Semiconductor Corporation	20A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote