Página 47 - Taiwan Semiconductor Corporation Produtos

Nº de peças	Fabricante	Descrição	pacote	Estoque
BZD27C13P R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 13.25V Tolerance: ±6.41% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 2µA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacote: DO-219AB	Estoque3.712
2M27Z B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 2000MW, %, DO Voltage - Zener (Nom) (Vz): 27V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 18 Ohms Current - Reverse Leakage @ Vr: 500nA @ 20.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	pacote: DO-204AC, DO-15, Axial	Estoque5.984
BZD27C180PW RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 180V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 130V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	pacote: SOD-123W	Estoque2.880
BZD27C13PHMHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 13.25V Tolerance: ±6.41% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 2µA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacote: DO-219AB	Estoque7.328
BZD17C24P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5.83% Power - Max: 800mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 18V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	pacote: DO-219AB	Estoque5.712
1M200ZHA0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 200V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 1500 Ohms Current - Reverse Leakage @ Vr: 5µA @ 152V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	pacote: DO-204AL, DO-41, Axial	Estoque2.384
ZM4757A L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1000MW, 5%, M Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 5µA @ 38.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	pacote: DO-213AB, MELF	Estoque3.264
BZT52B20S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 20V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 45nA @ 14V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	pacote: SC-90, SOD-323F	Estoque4.240
BZV55B5V1 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	pacote: DO-213AC, MINI-MELF, SOD-80	Estoque7.168
BZV55B20 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 500MW, 2%, MM Voltage - Zener (Nom) (Vz): 20V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 100nA @ 15V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	pacote: DO-213AC, MINI-MELF, SOD-80	Estoque6.336
TS40P05G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 40A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	pacote: 4-SIP, TS-6P	Estoque3.504
SBS24 REG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, SCHOTTKY BRIDG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Current - Reverse Leakage @ Vr: 100µA @ 40V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	pacote: 4-SMD, Gull Wing	Estoque6.576
TQM025NH04LCR-RLG	Taiwan Semiconductor Corporation	40V, 100A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6228 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (4.9x5.75) Package / Case: 8-PowerTDFN	pacote: -	Estoque15.000
TS20P06G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 20A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	pacote: -	Estoque3.363
2M22Z	Taiwan Semiconductor Corporation	DIODE ZENER 22V 2W DO204AC Voltage - Zener (Nom) (Vz): 22 V Tolerance: ±5% Power - Max: 2 W Impedance (Max) (Zzt): 12 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	pacote: -	Request a Quote
BZY55C11-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 11V 500MW 0805 Voltage - Zener (Nom) (Vz): 11 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	pacote: -	Request a Quote
MUR420S	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Estoque18.000
TSF20H150C	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 150V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	pacote: -	Estoque6
BZY55C33-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 33V 500MW 0805 Voltage - Zener (Nom) (Vz): 33 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 24 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	pacote: -	Request a Quote
FR152GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote
PUUP4DH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 71pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Estoque31.830
BZY55C3V0	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 3 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 4 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	pacote: -	Request a Quote
UDZS15B	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 15 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	pacote: -	Request a Quote
RS2DFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque20.970
S1GLWH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Estoque85.140
HS1KLWH	Taiwan Semiconductor Corporation	75NS, 1A, 800V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Estoque20.970
AZ23C4V7	Taiwan Semiconductor Corporation	SOT-23, 300MW, 5%, SMALL SIGNAL Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 4.7 V Tolerance: ±5% Power - Max: 300 mW Impedance (Max) (Zzt): 78 Ohms Current - Reverse Leakage @ Vr: - Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacote: -	Request a Quote
RS3B-V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote