Taiwan Semiconductor Corporation Produtos

2M82ZHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 2000MW, %, AE

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

pacote: DO-204AC, DO-15, Axial

BZD27C6V8PHRFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5.88%
• Power - Max: 1W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

2M100Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 2000MW, %, D

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 175 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

pacote: DO-204AC, DO-15, Axial

BZD27C68PHM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5.88%
• Power - Max: 1W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

1SMA5928 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1500MW, 5%, D

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 9.9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacote: DO-214AC, SMA

BZD17C180P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 800MW, %, SU

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±6.38%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

1N4743A R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

1M120Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

BZT52B11S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 90nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacote: SC-90, SOD-323F

BZX84C15 RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 300MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacote: TO-236-3, SC-59, SOT-23-3

BZV55C75 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 170 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

pacote: DO-213AC, MINI-MELF, SOD-80

TS6P03G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: 4-SIP, TS-6P

DBL103G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacote: 4-DIP (0.300", 7.62mm)

1SMB5948H

Taiwan Semiconductor Corporation

DIODE ZENER 91V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 91 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

pacote: -

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BZT52C8V2

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 8.2 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 630 nA @ 5 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacote: -

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TSM7ND65CI

Taiwan Semiconductor Corporation

MOSFET N-CH 650V 7A ITO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1124 pF @ 50 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ITO-220
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacote: -

MBRF10H200CTH

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 200V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

pacote: -

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TS10P05GH

Taiwan Semiconductor Corporation

10A, 600V, STANDARD BRIDGE RECTI

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 10 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: -

FR157G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

UG12J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

TSS54U

Taiwan Semiconductor Corporation

603, 30V, 0.2A, SCHOTTKY DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 30 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Operating Temperature - Junction: -65°C ~ 125°C

pacote: -

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BZT55B8V2

Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 8.2 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: QMMELF

pacote: -

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UDZS18B-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 18 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 13 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacote: -

UF5JFC-C0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 600 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

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MBRS20100CT-Y

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 20A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacote: -

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KBU604G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 400V 6A KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

pacote: -

TS25P04GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 400V 25A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: -

TSM1NB60LCW-RPG

Taiwan Semiconductor Corporation

600V, 0.55A, SINGLE N-CHANNEL PO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 10.4W (Tc)
• Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacote: -