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STMicroelectronics Produtos - Transistores - FET, MOSFET - Simples

Registros 2.492
Página  34/89
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STL23NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 92A PWRFLAT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque2.384
MOSFET (Metal Oxide)
30V
92A (Tc)
4.5V, 10V
2.3V @ 1mA
13.7nC @ 4.5V
2100pF @ 15V
±20V
-
2.9W (Ta), 50W (Tc)
3.7 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
STL8P4LLF6
STMicroelectronics

MOSFET P-CH 40V 8A PWRFLAT8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque4.416
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2.5V @ 250µA
22nC @ 4.5V
2850pF @ 25V
±20V
-
2.9W (Ta)
20.5 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
hot STN3NF06
STMicroelectronics

MOSFET N-CH 60V 4A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque609.552
MOSFET (Metal Oxide)
60V
4A (Tc)
10V
4V @ 250µA
13nC @ 10V
315pF @ 25V
±20V
-
3.3W (Tc)
100 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot STD4NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.569.940
MOSFET (Metal Oxide)
500V
3A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
310pF @ 25V
±30V
-
45W (Tc)
2.7 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
STD2LN60K3
STMicroelectronics

MOSFET N CH 600V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque5.088
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
235pF @ 50V
±30V
-
45W (Tc)
4.5 Ohm @ 1A, 10V
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STN3N45K3
STMicroelectronics

MOSFET N-CH 450V 0.6A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque5.296
MOSFET (Metal Oxide)
450V
600mA (Tc)
10V
4.5V @ 50µA
6nC @ 10V
150pF @ 25V
±30V
-
3W (Ta)
3.8 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot STN1HNK60
STMicroelectronics

MOSFET N-CH 600V 400MA SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque54.012
MOSFET (Metal Oxide)
600V
400mA (Tc)
10V
3.7V @ 250µA
10nC @ 10V
156pF @ 25V
±30V
-
3.3W (Tc)
8.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
STQ2HNK60ZR-AP
STMicroelectronics

MOSFET N-CH 600V 0.5A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque7.584
MOSFET (Metal Oxide)
600V
500mA (Tc)
10V
4.5V @ 50µA
15nC @ 10V
280pF @ 25V
±30V
-
3W (Tc)
4.8 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot STN1NF10
STMicroelectronics

MOSFET N-CH 100V 1A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque1.028.004
MOSFET (Metal Oxide)
100V
1A (Tc)
10V
4V @ 250µA
6nC @ 10V
105pF @ 25V
±20V
-
2.5W (Tc)
800 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot STN4NF20L
STMicroelectronics

MOSFET N-CH 200V 1A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque693.372
MOSFET (Metal Oxide)
200V
1A (Tc)
5V, 10V
3V @ 250µA
0.9nC @ 10V
150pF @ 25V
±20V
-
3.3W (Tc)
1.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
STT3P2UH7
STMicroelectronics

MOSFET P-CH 30V 3A SOT23-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
pacote: SOT-23-6
Estoque6.208
MOSFET (Metal Oxide)
30V
3A (Tc)
1.8V, 4.5V
1V @ 250µA
4.8nC @ 4.5V
510pF @ 10V
±8V
-
1.6W (Tc)
100 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
STL4P2UH7
STMicroelectronics

MOSFET P-CH 20V 4A PWRFLAT2X2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (2x2)
  • Package / Case: 6-PowerWDFN
pacote: 6-PowerWDFN
Estoque5.904
MOSFET (Metal Oxide)
20V
4A (Tc)
1.8V, 4.5V
1V @ 250µA
4.8nC @ 4.5V
510pF @ 10V
±8V
-
2.4W (Tc)
100 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
PowerFlat? (2x2)
6-PowerWDFN
STWA88N65M5
STMicroelectronics

MOSFET N-CH 650V 84A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 42A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque7.232
MOSFET (Metal Oxide)
650V
84A (Tc)
10V
5V @ 250µA
204nC @ 10V
8825pF @ 100V
±25V
-
450W (Tc)
29 mOhm @ 42A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW54NM65ND
STMicroelectronics

MOSFET N-CH 650V 59A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 24.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque29.676
MOSFET (Metal Oxide)
650V
49A (Tc)
10V
5V @ 250µA
188nC @ 10V
6200pF @ 50V
±25V
-
350W (Tc)
65 mOhm @ 24.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STWA57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque7.744
MOSFET (Metal Oxide)
650V
42A (Tc)
10V
5V @ 250µA
98nC @ 10V
4200pF @ 100V
±25V
-
250W (Tc)
63 mOhm @ 21A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW25N95K3
STMicroelectronics

MOSFET N-CH 950V 22A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque390.000
MOSFET (Metal Oxide)
950V
22A (Tc)
10V
5V @ 150µA
105nC @ 10V
3680pF @ 100V
±30V
-
400W (Tc)
360 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STY80NM60N
STMicroelectronics

MOSFET N-CH 600V 74A MAX247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 447W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 37A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: MAX247?
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque90.528
MOSFET (Metal Oxide)
600V
74A (Tc)
10V
4V @ 250µA
360nC @ 10V
10100pF @ 50V
±25V
-
447W (Tc)
35 mOhm @ 37A, 10V
150°C (TJ)
Through Hole
MAX247?
TO-247-3
hot STW60N65M5
STMicroelectronics

MOSFET N-CH 650V 46A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque390.300
MOSFET (Metal Oxide)
650V
46A (Tc)
10V
5V @ 250µA
139nC @ 10V
6810pF @ 100V
±25V
-
255W (Tc)
59 mOhm @ 23A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW56NM60N
STMicroelectronics

MOSFET N CH 600V 45A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque5.664
MOSFET (Metal Oxide)
600V
45A (Tc)
10V
4V @ 250µA
150nC @ 10V
4800pF @ 50V
±25V
-
300W (Tc)
60 mOhm @ 22.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
STFW60N65M5
STMicroelectronics

MOSFET N-CH TO-3PF/ISOWATT 218

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacote: TO-3P-3 Full Pack
Estoque7.980
MOSFET (Metal Oxide)
650V
46A (Tc)
10V
5V @ 250µA
139nC @ 10V
6810pF @ 100V
±25V
-
79W (Tc)
59 mOhm @ 23A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
hot STI57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A I2PAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque60.000
MOSFET (Metal Oxide)
650V
42A (Tc)
10V
5V @ 250µA
98nC @ 10V
4200pF @ 100V
±25V
-
250W (Tc)
63 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
STF42N65M5
STMicroelectronics

MOSFET N-CH 650V 33A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque13.782
MOSFET (Metal Oxide)
650V
33A (Tc)
10V
5V @ 250µA
100nC @ 10V
4650pF @ 100V
±25V
-
40W (Tc)
79 mOhm @ 16.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STFW45N65M5
STMicroelectronics

MOSFET N-CH 650V 35A TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacote: TO-3P-3 Full Pack
Estoque6.792
MOSFET (Metal Oxide)
650V
35A (Tc)
10V
5V @ 250µA
82nC @ 10V
3470pF @ 100V
±25V
-
57W (Tc)
78 mOhm @ 17.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
hot STW32N65M5
STMicroelectronics

MOSFET N-CH 650V 24A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque22.308
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
5V @ 250µA
72nC @ 10V
3320pF @ 100V
±25V
-
150W (Tc)
119 mOhm @ 12A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STW30NM60N
STMicroelectronics

MOSFET N-CH 600V 25A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque8.460
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
4V @ 250µA
91nC @ 10V
2700pF @ 50V
±30V
-
190W (Tc)
130 mOhm @ 12.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STW40N60M2
STMicroelectronics

MOSFET N-CH 600V 34A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque5.376
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
4V @ 250µA
57nC @ 10V
2500pF @ 100V
±25V
-
250W (Tc)
88 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW25N80K5
STMicroelectronics

MOSFET N-CH 800V 19.5A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque5.312
MOSFET (Metal Oxide)
800V
19.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1600pF @ 100V
±30V
-
250W (Tc)
260 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STWA45N65M5
STMicroelectronics

MOSFET N-CH 650V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque11.592
MOSFET (Metal Oxide)
650V
35A (Tc)
10V
5V @ 250µA
82nC @ 10V
3470pF @ 100V
±25V
-
210W (Tc)
78 mOhm @ 17.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3