Página 6 - Rohm Semiconductor Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210559 ext. 803
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Rohm Semiconductor Produtos - Transistores - FET, MOSFET - Simples

Registros 1.247
Página  6/42
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R6004PND3FRATL
Rohm Semiconductor

MOSFET N-CH 600V 4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque13.605
MOSFET (Metal Oxide)
600 V
4A (Tc)
10V
4.5V @ 1mA
11 nC @ 10 V
280 pF @ 25 V
±25V
-
65W (Tc)
1.8Ohm @ 2A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RX3R05BBHC16
Rohm Semiconductor

NCH 150V 50A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque2.835
MOSFET (Metal Oxide)
150 V
50A (Tc)
6V, 10V
4V @ 1mA
37 nC @ 10 V
2150 pF @ 75 V
±20V
-
89W (Tc)
29mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RQ6E045TNTR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque33.195
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
10.7 nC @ 4.5 V
540 pF @ 10 V
±12V
-
950mW (Ta)
43mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RSR015P06HZGTL
Rohm Semiconductor

MOSFET P-CH 60V 1.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4V, 10V
3V @ 1mA
10 nC @ 10 V
500 pF @ 10 V
±20V
-
700mW (Ta)
280mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6006JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 6A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque2.622
MOSFET (Metal Oxide)
600 V
6A (Tc)
15V
7V @ 800µA
15.5 nC @ 15 V
410 pF @ 100 V
±30V
-
43W (Tc)
936mOhm @ 3A, 15V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RSQ020N03HZGTR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque3.690
MOSFET (Metal Oxide)
30 V
2A (Ta)
4V, 10V
2.5V @ 1mA
3.1 nC @ 5 V
110 pF @ 10 V
±20V
-
950mW (Ta)
134mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RQ6E045RPTR
Rohm Semiconductor

MOSFET P-CH 30V 4.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4V, 10V
2.5V @ 1mA
14 nC @ 5 V
1350 pF @ 10 V
±20V
-
950mW (Ta)
35mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
SCT4026DEHRC11
Rohm Semiconductor

750V, 56A, 3-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 176W
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacote: -
Estoque1.440
SiCFET (Silicon Carbide)
750 V
56A (Tc)
18V
4.8V @ 15.4mA
94 nC @ 18 V
2320 pF @ 500 V
+21V, -4V
-
176W
34mOhm @ 29A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RJ1U330AAFRGTL
Rohm Semiconductor

MOSFET N-CH 250V 33A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque243
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
5V @ 1mA
80 nC @ 10 V
4500 pF @ 25 V
±30V
-
211W (Tc)
105mOhm @ 16.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6535KNX3C16
Rohm Semiconductor

650V 35A, TO-220AB, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
5V @ 1.3mA
72 nC @ 10 V
3000 pF @ 25 V
±20V
-
370W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RD3G600GNTL
Rohm Semiconductor

MOSFET N-CH 40V 60A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque7.398
MOSFET (Metal Oxide)
40 V
60A (Tc)
4.5V, 10V
2.5V @ 1mA
46.5 nC @ 10 V
3400 pF @ 20 V
±20V
-
40W (Tc)
3.6mOhm @ 60A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RS3G160ATTB1
Rohm Semiconductor

PCH -40V -16A POWER MOSFET - RS3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Estoque20.724
MOSFET (Metal Oxide)
40 V
16A (Ta)
4.5V, 10V
2.5V @ 1mA
120 nC @ 10 V
6250 pF @ 20 V
±20V
-
1.4W (Ta)
6.2mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RQ5E030RPTL
Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3A (Ta)
4V, 10V
2.5V @ 1mA
5.2 nC @ 5 V
480 pF @ 10 V
±20V
-
700mW (Ta)
75mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RSQ035N03HZGTR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque4.446
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
7.4 nC @ 5 V
290 pF @ 10 V
±20V
-
950mW (Ta)
62mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6007JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 7A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque3.240
MOSFET (Metal Oxide)
600 V
7A (Tc)
15V
7V @ 1mA
17.5 nC @ 15 V
475 pF @ 100 V
±30V
-
96W (Tc)
780mOhm @ 3.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RW4C045BCTCL1
Rohm Semiconductor

PCH -20V -4.5A POWER MOSFET: RW4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
pacote: -
Estoque62.220
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
1.5V @ 1mA
6.5 nC @ 4.5 V
460 pF @ 10 V
±8V
-
1.5W (Ta)
56mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
R6022YNX3C16
Rohm Semiconductor

NCH 600V 22A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque2.994
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V, 12V
6V @ 1.8mA
33 nC @ 10 V
1400 pF @ 100 V
±30V
-
205W (Tc)
165mOhm @ 6.5A, 12V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RD3L080SNFRATL
Rohm Semiconductor

MOSFET N-CH 60V 8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque21.264
MOSFET (Metal Oxide)
60 V
8A (Ta)
4V, 10V
2.5V @ 1mA
9.4 nC @ 10 V
380 pF @ 10 V
±20V
-
15W (Tc)
80mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ6E045SNTR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque8.991
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4V, 10V
2.5V @ 1mA
9.5 nC @ 5 V
520 pF @ 10 V
±20V
-
950mW (Ta)
38mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6524ENZC8
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4V @ 750µA
70 nC @ 10 V
1650 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6003JND4TL1
Rohm Semiconductor

600V 1.3A SOT-223-3, PRESTOMOS W

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.15Ohm @ 1.5A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
pacote: -
Estoque12.000
MOSFET (Metal Oxide)
600 V
1.3A (Tc)
15V
7V @ 300µA
8 nC @ 15 V
180 pF @ 100 V
±30V
-
7.8W (Tc)
2.15Ohm @ 1.5A, 15V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
RQ1A070ZPHZGTR
Rohm Semiconductor

AUTOMOTIVE PCH -12V -7A SMALL SI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacote: -
Estoque8.790
MOSFET (Metal Oxide)
12 V
7A (Ta)
1.5V, 4.5V
1V @ 1mA
58 nC @ 4.5 V
7400 pF @ 6 V
±10V
-
1.1W (Ta)
12mOhm @ 7A, 4.5V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RW4E045AJTCL1
Rohm Semiconductor

NCH 30V 4.5A POWER MOSFET: RW4E0

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
pacote: -
Estoque7.356
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
4 nC @ 4.5 V
450 pF @ 15 V
±12V
-
1.5W (Ta)
40mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
SCT4036KW7TL
Rohm Semiconductor

1200V, 40A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 150W
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacote: -
Estoque2.388
SiCFET (Silicon Carbide)
1200 V
40A (Tj)
18V
4.8V @ 11.1mA
91 nC @ 18 V
2335 pF @ 800 V
+21V, -4V
-
150W
47mOhm @ 21A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RQ6P020ATTCR
Rohm Semiconductor

PCH -100V -2A POWER MOSFET: RQ6P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque16.155
MOSFET (Metal Oxide)
100 V
2A (Ta)
4.5V, 10V
2.5V @ 1mA
24 nC @ 10 V
760 pF @ 50 V
±20V
-
950mW (Ta)
220mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6061YNXC7G
Rohm Semiconductor

NCH 600V 26A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V, 12V
6V @ 3.5mA
76 nC @ 10 V
3700 pF @ 100 V
±30V
-
100W (Tc)
60mOhm @ 13A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6027YNXC7G
Rohm Semiconductor

NCH 600V 14A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V, 12V
6V @ 2mA
40 nC @ 10 V
1670 pF @ 100 V
±30V
-
70W (Tc)
135mOhm @ 7A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6002END3TL1
Rohm Semiconductor

MOSFET N-CH 600V 1.7A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque6.957
MOSFET (Metal Oxide)
600 V
1.7A (Tc)
10V
4V @ 1mA
6.5 nC @ 10 V
65 pF @ 25 V
±20V
-
26W (Tc)
3.4Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3022KLGC11
Rohm Semiconductor

SICFET N-CH 1200V 95A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacote: -
Estoque648
SiCFET (Silicon Carbide)
1200 V
95A (Tc)
18V
5.6V @ 18.2mA
178 nC @ 10 V
2879 pF @ 800 V
+22V, -4V
-
427W
28.6mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
R6050JNZC8
Rohm Semiconductor

MOSFET N-CH 600V 50A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
50A (Tc)
15V
7V @ 5mA
120 nC @ 15 V
4500 pF @ 100 V
±30V
-
120W (Tc)
83mOhm @ 25A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack