Microsemi Corporation Produtos

APT70GR120B2

Microsemi Corporation

IGBT 1200V 160A 961W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 280A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
• Power - Max: 961W
• Switching Energy: 3.82mJ (on), 2.58mJ (off)
• Input Type: Standard
• Gate Charge: 544nC
• Td (on/off) @ 25°C: 33ns/278ns
• Test Condition: 600V, 70A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

pacote: TO-247-3

2224-6L

Microsemi Corporation

TRANS RF BIPO 22W 1.25A 55LV1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 40V
• Frequency - Transition: 2.2GHz ~ 2.4GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 22W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 1.25A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55LV
• Supplier Device Package: 55LV

pacote: 55LV

1N5926C G

Microsemi Corporation

DIODE ZENER 11V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

3EZ150D10E3/TR12

Microsemi Corporation

DIODE ZENER 150V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 114V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

JANTX1N4133CUR-1

Microsemi Corporation

DIODE ZENER 87V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 87V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1000 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 66.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacote: DO-213AA (Glass)

JAN1N4474D

Microsemi Corporation

DIODE ZENER 24V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±1%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 19.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

pacote: DO-204AL, DO-41, Axial

JANTX1N4129D-1

Microsemi Corporation

DIODE ZENER 62V 500MW DO35

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 47.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacote: DO-204AH, DO-35, Axial

JAN1N4621UR-1

Microsemi Corporation

DIODE ZENER 3.6V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1700 Ohms
• Current - Reverse Leakage @ Vr: 3.5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

pacote: DO-213AA

1PMT5956A/TR13

Microsemi Corporation

DIODE ZENER 200V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 152V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

pacote: DO-216AA

1N5945E3/TR13

Microsemi Corporation

DIODE ZENER 68V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

JANTX1N3671AR

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-203AA, DO-4, Stud

APT75DQ120BG

Microsemi Corporation

DIODE GEN PURP 1.2KV 75A TO247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 3.1V @ 75A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 325ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247 [B]
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-247-2

MT8806APR1

Microsemi Corporation

IC ANLG SWITCH ARRAY 8X4 28PLCC

• Applications: Telecommunications
• Multiplexer/Demultiplexer Circuit: 8:4
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): 65 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 13.2 V
• Voltage - Supply, Dual (V±): ±4.5 V
• -3db Bandwidth: 45MHz
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-LCC
• Supplier Device Package: 28-PLCC

pacote: 28-LCC

A2F200M3F-1CSG288I

Microsemi Corporation

IC FPGA 200K GATES 256KB 288-CSP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
• Speed: 100MHz
• Primary Attributes: ProASIC?3 FPGA, 200K Gates, 4608 D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 288-TFBGA, CSPBGA
• Supplier Device Package: 288-CSP (11x11)

pacote: 288-TFBGA, CSPBGA

A1020B-VQG80I

Microsemi Corporation

IC FPGA 69 I/O 80VQFP

• Number of LABs/CLBs: 547
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 69
• Number of Gates: 2000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 80-TQFP
• Supplier Device Package: 80-VQFP (14x14)

pacote: 80-TQFP

JAN1N6168

Microsemi Corporation

TVS DIODE 91.2VWM 173.36VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 91.2V
• Voltage - Breakdown (Min): 108.3V
• Voltage - Clamping (Max) @ Ipp: 173.36V
• Current - Peak Pulse (10/1000µs): 8.65A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: C, Axial

pacote: Axial

MSMCGLCE15AE3

Microsemi Corporation

TVS DIODE 15VWM 24.4VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 61A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacote: DO-215AB, SMC Gull Wing

MLCE33A

Microsemi Corporation

TVS DIODE 33VWM 53.3VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 28.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

pacote: DO-201AA, DO-27, Axial

JANTX1N6127A

Microsemi Corporation

TVS DIODE 56VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 56V
• Voltage - Breakdown (Min): 71.3V
• Voltage - Clamping (Max) @ Ipp: 103.1V
• Current - Peak Pulse (10/1000µs): 4.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

pacote: B, Axial

JAN1N6125A

Microsemi Corporation

TVS DIODE 47.1VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 47.1V
• Voltage - Breakdown (Min): 58.9V
• Voltage - Clamping (Max) @ Ipp: 85.3V
• Current - Peak Pulse (10/1000µs): 5.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

pacote: B, Axial

JAN1N6121A

Microsemi Corporation

TVS DIODE 32.7VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 32.7V
• Voltage - Breakdown (Min): 40.9V
• Voltage - Clamping (Max) @ Ipp: 59.1V
• Current - Peak Pulse (10/1000µs): 8.5A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

pacote: B, Axial

MXPLAD30KP54AE3

Microsemi Corporation

TVS DIODE 54VWM 87.1VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 342A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MXLPLAD30KP33AE3

Microsemi Corporation

TVS DIODE 33VWM 53.3VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 564A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MPLAD30KP180A

Microsemi Corporation

TVS DIODE 180VWM 291VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 180V
• Voltage - Breakdown (Min): 200V
• Voltage - Clamping (Max) @ Ipp: 291V
• Current - Peak Pulse (10/1000µs): 104A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MXP6KE22AE3

Microsemi Corporation

TVS DIODE 18.8VWM 30.6VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 20A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacote: T-18, Axial

MXLSMBG33CAE3

Microsemi Corporation

TVS DIODE 33VWM 53.3VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 11.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacote: DO-215AA, SMB Gull Wing

MASMLJ70CAE3

Microsemi Corporation

TVS DIODE 70VWM 113VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 26.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacote: DO-214AB, SMC

MASMCG150A

Microsemi Corporation

TVS DIODE 150VWM 243VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacote: DO-215AB, SMC Gull Wing

MASMBJ36A

Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacote: DO-214AA, SMB

SMCJ24E3/TR13

Microsemi Corporation

TVS DIODE 24VWM 43VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 43V
• Current - Peak Pulse (10/1000µs): 34.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacote: DO-214AB, SMC