Microsemi Corporation Produtos

APTGLQ75H120T3G

Microsemi Corporation

PWR MOD IGBT4 1200V 130A SP3

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 130A
• Power - Max: 385W
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
• Current - Collector Cutoff (Max): 50µA
• Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SP1
• Supplier Device Package: SP1

pacote: SP1

2N7228U

Microsemi Corporation

MOSFET N-CH 500V SMD1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 415 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-267AB
• Package / Case: TO-267AB

pacote: TO-267AB

1035MP

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.025GHz ~ 1.15GHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB ~ 10.5dB
• Power - Max: 125W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
• Current - Collector (Ic) (Max): 2.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55FW-1
• Supplier Device Package: 55FW-1

pacote: 55FW-1

JANTXV1N4475D

Microsemi Corporation

DIODE ZENER 27V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±1%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 21.6V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

pacote: DO-204AL, DO-41, Axial

1N5936B G

Microsemi Corporation

DIODE ZENER 30V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 28 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

JAN1N4463C

Microsemi Corporation

DIODE ZENER 8.2V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 4.92V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

pacote: DO-204AL, DO-41, Axial

CDLL6337

Microsemi Corporation

DIODE ZENER 36V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacote: DO-213AB, MELF

JANTX1N4127UR-1

Microsemi Corporation

DIODE ZENER 56V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

pacote: DO-213AA (Glass)

1N5377BE3/TR13

Microsemi Corporation

DIODE ZENER 91V 5W T18

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 65.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacote: T-18, Axial

1PMT5930BE3/TR7

Microsemi Corporation

DIODE ZENER 16V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

pacote: DO-216AA

1N821-1

Microsemi Corporation

DIODE ZENER 6.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacote: DO-204AH, DO-35, Axial

A2F500M3G-CS288I

Microsemi Corporation

IC FPGA 500K GATES 512KB 288-CSP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 500K Gates, 11520 D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 288-TFBGA, CSPBGA
• Supplier Device Package: 288-CSP (11x11)

pacote: 288-TFBGA, CSPBGA

M1A3P600L-1FG256I

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 177
• Number of Gates: 600000
• Voltage - Supply: 1.14V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

pacote: 256-LBGA

A3PE3000L-PQG208I

Microsemi Corporation

IC FPGA 147 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 516096
• Number of I/O: 147
• Number of Gates: 3000000
• Voltage - Supply: 1.14V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

pacote: 208-BFQFP

A3P1000-1FGG484M

Microsemi Corporation

IC FPGA 300 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 300
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacote: 484-BGA

M1AGL1000V2-CS281I

Microsemi Corporation

IC FPGA 215 I/O 281CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 24576
• Total RAM Bits: 147456
• Number of I/O: 215
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 281-TFBGA, CSBGA
• Supplier Device Package: 281-CSP (10x10)

pacote: 281-TFBGA, CSBGA

EX64-PTQG64I

Microsemi Corporation

IC FPGA 41 I/O 64TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 128
• Total RAM Bits: -
• Number of I/O: 41
• Number of Gates: 3000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

pacote: 64-LQFP

M2GL050-VFG400

Microsemi Corporation

IC FPGA 207 I/O 400VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56340
• Total RAM Bits: 1869824
• Number of I/O: 207
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

pacote: 400-LFBGA

MP6KE43CAE3

Microsemi Corporation

TVS DIODE 36.8VWM 59.3VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36.8V
• Voltage - Breakdown (Min): 40.9V
• Voltage - Clamping (Max) @ Ipp: 59.3V
• Current - Peak Pulse (10/1000µs): 10.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacote: T-18, Axial

MP6KE200AE3

Microsemi Corporation

TVS DIODE 171VWM 274VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 2.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacote: T-18, Axial

M15KP90CA

Microsemi Corporation

TVS DIODE 90VWM 146VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 146V
• Current - Peak Pulse (10/1000µs): 103A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

pacote: DO-204AR, Axial

P6KE16CAE3/TR13

Microsemi Corporation

TVS DIODE 13.6VWM 22.5VC AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 27A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: Axial

pacote: T-18, Axial

MXPLAD36KP16A

Microsemi Corporation

TVS DIODE 27.2VC 1324A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 27.2V
• Current - Peak Pulse (10/1000µs): 1324A (1.324kA)
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MXLPLAD36KP280AE3

Microsemi Corporation

TVS DIODE 451VC 80A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 280V
• Voltage - Breakdown (Min): 311V
• Voltage - Clamping (Max) @ Ipp: 451V
• Current - Peak Pulse (10/1000µs): 80A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MXLPLAD18KP7.5A

Microsemi Corporation

TVS DIODE 12.9VC 1396A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 1396A (1.396kA)
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MXL5KP9.0CAE3

Microsemi Corporation

TVS DIODE 9VWM 15.4VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 325A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacote: DO-204AR, Axial

MXLSMBJ150CA

Microsemi Corporation

TVS DIODE 150VWM 243VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 2.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacote: DO-214AA, SMB

USB50805CE3/TR7

Microsemi Corporation

TVS DIODE 5VWM 13VC 8SO

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 2
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 13V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Ethernet
• Capacitance @ Frequency: 3pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)