Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 660V 2A AXIAL
|
pacote: A, Axial |
Estoque6.624 |
|
660V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 2A AXIAL
|
pacote: A, Axial |
Estoque5.888 |
|
440V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 2A AXIAL
|
pacote: A, Axial |
Estoque4.224 |
|
220V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 6A AXIAL
|
pacote: B, Axial |
Estoque5.968 |
|
50V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 2.5A D5A
|
pacote: SQ-MELF, A |
Estoque4.432 |
|
100V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A D5A
|
pacote: SQ-MELF, A |
Estoque2.064 |
|
800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A D5A
|
pacote: SQ-MELF, A |
Estoque2.464 |
|
600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.4KV 250MA AXIAL
|
pacote: S, Axial |
Estoque3.968 |
|
1400V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1400V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 1A DO213AB
|
pacote: DO-213AB, MELF |
Estoque6.720 |
|
100V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 75MA DO213AA
|
pacote: DO-213AA |
Estoque4.208 |
|
20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 15V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 1A DO213AB
|
pacote: DO-213AB, MELF |
Estoque6.576 |
|
60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
||
Microsemi Corporation |
DIODE SCHOTTKY 50V 1A DO213AB
|
pacote: DO-213AB, MELF |
Estoque4.560 |
|
50V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 500MA DO213AA
|
pacote: DO-213AA |
Estoque6.848 |
|
40V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 40V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 30V 500MA DO213AA
|
pacote: DO-213AA |
Estoque4.672 |
|
30V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 500MA DO213AA
|
pacote: DO-213AA |
Estoque2.000 |
|
20V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 200MA DO213AA
|
pacote: DO-213AA |
Estoque2.992 |
|
40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 30V 200MA DO213AA
|
pacote: DO-213AA |
Estoque3.840 |
|
30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 200MA DO213AA
|
pacote: DO-213AA |
Estoque3.280 |
|
20V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 12A DO203AA
|
pacote: DO-203AA, DO-4, Stud |
Estoque3.776 |
|
100V | 12A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 115pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE MODULE 100V 240A HALF-PAK
|
pacote: HALF-PAK |
Estoque7.088 |
|
100V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 100V | 6400pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 400V 300A DIE
|
pacote: Die |
Estoque4.704 |
|
400V | 300A | 1.1V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 75µA @ 400V | - | Chassis Mount | Die | Die | - |
||
Microsemi Corporation |
DIODE MODULE 600V 200A HALF-PAK
|
pacote: HALF-PAK |
Estoque6.096 |
|
600V | 200A | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 50µA @ 600V | - | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 600V 100A HALF-PAK
|
pacote: HALF-PAK |
Estoque2.384 |
|
600V | 100A | 1.35V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 50µA @ 600V | 275pF @ 10V, 1Mhz | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 180V 240A HALF-PAK
|
pacote: HALF-PAK |
Estoque7.632 |
|
180V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 180V | 6000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 150V 240A HALF-PAK
|
pacote: HALF-PAK |
Estoque6.592 |
|
150V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 150V | 6000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 30V 240A HALF-PAK
|
pacote: HALF-PAK |
Estoque4.208 |
|
30V | 240A | 550mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12mA @ 30V | 10500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 45V 240A HALF-PAK
|
pacote: HALF-PAK |
Estoque4.096 |
|
45V | 240A | 550mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12mA @ 45V | 10500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
||
Microsemi Corporation |
DIODE MODULE 40V 240A HALF-PAK
|
pacote: HALF-PAK |
Estoque7.552 |
|
40V | 240A | 550mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12mA @ 40V | 10500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |