Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 50V 1.3A AXIAL
|
pacote: E, Axial |
Estoque7.760 |
|
50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | E, Axial | E-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 500V 3A B-MELF
|
pacote: SQ-MELF, B |
Estoque4.880 |
|
500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA UB
|
pacote: 3-SMD, No Lead |
Estoque4.032 |
|
75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 75µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | UB | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 3KV 250MA AXIAL
|
pacote: S, Axial |
Estoque6.864 |
|
3000V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 3000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A AXIAL
|
pacote: E, Axial |
Estoque3.824 |
|
440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A APKG
|
pacote: SQ-MELF, A |
Estoque5.488 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A APKG
|
pacote: SQ-MELF, A |
Estoque5.808 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A APKG
|
pacote: SQ-MELF, A |
Estoque6.624 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GP 1.75KV 250MA AXIAL
|
pacote: S, Axial |
Estoque7.952 |
|
1750V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1750V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE RECT 150V 16A DO4
|
pacote: DO-203AA, DO-4, Stud |
Estoque4.592 |
|
150V | 16A | 1.3V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 150V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1.3A AXIAL
|
pacote: A, Axial |
Estoque4.256 |
|
150V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1.3A AXIAL
|
pacote: A, Axial |
Estoque5.552 |
|
50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 850MA AXIAL
|
pacote: A, Axial |
Estoque3.424 |
|
150V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 850MA AXIAL
|
pacote: A, Axial |
Estoque6.240 |
|
100V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1.3A AXIAL
|
pacote: A, Axial |
Estoque5.056 |
|
100V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 2A D5A
|
pacote: SQ-MELF, A |
Estoque4.944 |
|
220V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1A D5A
|
pacote: SQ-MELF, A |
Estoque3.008 |
|
900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 500nA @ 150V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA UB
|
pacote: 3-SMD, No Lead |
Estoque2.960 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A BPKG
|
pacote: SQ-MELF, B |
Estoque6.736 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A BPKG
|
pacote: SQ-MELF, B |
Estoque5.920 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A BPKG
|
pacote: SQ-MELF, B |
Estoque5.984 |
|
50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | - |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A B-MELF
|
pacote: SQ-MELF, B |
Estoque3.968 |
|
400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 5A B-MELF
|
pacote: SQ-MELF, B |
Estoque6.336 |
|
400V | 5A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 2KV 250MA AXIAL
|
pacote: S, Axial |
Estoque3.088 |
|
2000V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 2000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A B-MELF
|
pacote: SQ-MELF, B |
Estoque2.256 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A APKG
|
pacote: SQ-MELF, A |
Estoque6.384 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A APKG
|
pacote: SQ-MELF, A |
Estoque3.776 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A APKG
|
pacote: SQ-MELF, A |
Estoque2.064 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |