Página 935 - Memória | Circuitos integrados

Nº de peças	Fabricante	Descrição	pacote	Estoque	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EDF8132A3PB-JD-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque3.248	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
JS28F128J3F75D TR	Micron Technology Inc.	IC FLASH 128MBIT 75NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 75ns Access Time: 75ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	pacote: 56-TFSOP (0.724", 18.40mm Width)	Estoque5.424	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	75ns	75ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
SST39VF512-70-4C-WHE-T	Microchip Technology	IC FLASH 512KBIT 70NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	pacote: 32-TFSOP (0.724", 18.40mm Width)	Estoque5.328	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	20µs	70ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
MT29C2G48MAKLCJI-6 IT	Micron Technology Inc.	IC FLASH/LPDRAM 3GBIT 168VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: -	pacote: 168-VFBGA	Estoque8.964	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)	Parallel	166MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-VFBGA	-
IDT71T75802S100PF	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	pacote: 100-LQFP	Estoque2.768	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	100MHz	-	5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT25DL081-MHN-T	Microchip Technology	IC FLASH 8MBIT 66MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (256 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 100MHz Write Cycle Time - Word, Page: 8µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6)	pacote: 8-UDFN Exposed Pad	Estoque4.048	FLASH	FLASH	8Mb (256 Bytes x 4096 pages)	SPI	100MHz	8µs, 3ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	8-UDFN Exposed Pad	8-UDFN (5x6)
MT48H8M32LFF5-10	Micron Technology Inc.	IC SDRAM 256MBIT 100MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	pacote: 90-VFBGA	Estoque120.000	DRAM	SDRAM - Mobile LPSDR	256Mb (8M x 32)	Parallel	100MHz	15ns	7ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
M24C16-BN6	STMicroelectronics	IC EEPROM 16KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	pacote: 8-DIP (0.300", 7.62mm)	Estoque2.704	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MT29F128G08AJAAAWP-Z:A	Micron Technology Inc.	IC FLASH 128GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	pacote: 48-TFSOP (0.724", 18.40mm Width)	Estoque15.984	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MT29F128G08AMCDBJ5-6IT:D TR	Micron Technology Inc.	IC FLASH 128GBIT 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque7.952	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS43TR82560B-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	pacote: 78-TFBGA	Estoque6.848	DRAM	SDRAM - DDR3	2Gb (256M x 8)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS46TR16128C-15HBLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	pacote: 96-TFBGA	Estoque5.344	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42S83200J-6TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	pacote: 54-TSOP (0.400", 10.16mm Width)	Estoque3.504	DRAM	SDRAM	256Mb (32M x 8)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
M24M01-HRMN6TP	STMicroelectronics	IC EEPROM 1MBIT 1MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 500ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque153.096	EEPROM	EEPROM	1Mb (128K x 8)	I2C	1MHz	5ms	500ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
25AA010AT-I/MS	Microchip Technology	IC EEPROM 1KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Estoque5.088	EEPROM	EEPROM	1Kb (128 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
SST39VF020-70-4I-NHE	Microchip Technology	IC FLASH 2MBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	pacote: 32-LCC (J-Lead)	Estoque6.736	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	20µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AS4C256M8D3LB-12BCN	Alliance Memory, Inc.	IC DRAM 2G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	pacote: 78-VFBGA	Estoque3.968	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (10.5x8)
S25FL128SAGNFM003	Cypress Semiconductor Corp	IC 128 MB FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	pacote: 8-WDFN Exposed Pad	Estoque6.192	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
IS25WP256D-JMLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 256M SPI 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	pacote: 16-SOIC (0.295", 7.50mm Width)	Estoque6.880	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	104MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S25FL128SAGMFIR03	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	pacote: 16-SOIC (0.295", 7.50mm Width)	Estoque7.792	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S25FL128P0XNFI001M	Cypress Semiconductor Corp	IC MEMORY FLASH NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	pacote: 8-WDFN Exposed Pad	Estoque7.584	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	3µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
CG8273AAT	Cypress Semiconductor Corp	IC SRAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque7.120	-	-	-	-	-	-	-	-	-	-	-	-
DS2502-UNW-1155+	Maxim Integrated	IC INTEGRATED CIRCUIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque7.936	-	-	-	-	-	-	-	-	-	-	-	-
GS8342QT37BGD-333I	GSI Technology Inc.	IC SRAM 36MBIT PARALLEL 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 36Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x13)	pacote: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	36Mbit	Parallel	333 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x13)
IS46TR16640C-125JBLA25	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 115°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	pacote: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 115°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
W66AP6NBUAHJ-TR	Winbond Electronics	1GB LPDDR4, X16, 2133MHZ, -40C~1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 1Gbit Memory Interface: LVSTL_11 Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	pacote: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	1Gbit	LVSTL_11	2.133 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
CAT24WC128W	onsemi	IC EEPROM 128KBIT I2C 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 10ms Access Time: 550 ns Voltage - Supply: 2.5V ~ 6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	EEPROM	EEPROM	128Kbit	I2C	1 MHz	10ms	550 ns	2.5V ~ 6V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
M10162040054X0PSAR	Renesas Electronics Corporation	IC RAM 16MBIT SPI 54MHZ 8SOIC Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 16Mbit Memory Interface: SPI Clock Frequency: 54 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71V ~ 2V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	16Mbit	SPI	54 MHz	-	-	1.71V ~ 2V	-40°C ~ 105°C	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC

EDF8132A3PB-JD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque3.248

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

JS28F128J3F75D TR

Micron Technology Inc.

IC FLASH 128MBIT 75NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 75ns
Access Time: 75ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

pacote: 56-TFSOP (0.724", 18.40mm Width)

Estoque5.424

FLASH

FLASH - NOR

128Mb (16M x 8, 8M x 16)

Parallel

-

75ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

SST39VF512-70-4C-WHE-T

Microchip Technology

IC FLASH 512KBIT 70NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

pacote: 32-TFSOP (0.724", 18.40mm Width)

Estoque5.328

FLASH

512Kb (64K x 8)

Parallel

-

20µs

70ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

MT29C2G48MAKLCJI-6 IT

Micron Technology Inc.

IC FLASH/LPDRAM 3GBIT 168VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: -

pacote: 168-VFBGA

Estoque8.964

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)

Parallel

166MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-VFBGA

-

IDT71T75802S100PF

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

pacote: 100-LQFP

Estoque2.768

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

100MHz

-

5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT25DL081-MHN-T

Microchip Technology

IC FLASH 8MBIT 66MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (256 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 8µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)

pacote: 8-UDFN Exposed Pad

Estoque4.048

FLASH

8Mb (256 Bytes x 4096 pages)

SPI

100MHz

8µs, 3ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

8-UDFN Exposed Pad

8-UDFN (5x6)

MT48H8M32LFF5-10

Micron Technology Inc.

IC SDRAM 256MBIT 100MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

pacote: 90-VFBGA

Estoque120.000

DRAM

SDRAM - Mobile LPSDR

256Mb (8M x 32)

Parallel

100MHz

15ns

7ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

M24C16-BN6

STMicroelectronics

IC EEPROM 16KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

pacote: 8-DIP (0.300", 7.62mm)

Estoque2.704

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

MT29F128G08AJAAAWP-Z:A

Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

pacote: 48-TFSOP (0.724", 18.40mm Width)

Estoque15.984

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MT29F128G08AMCDBJ5-6IT:D TR

Micron Technology Inc.

IC FLASH 128GBIT 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque7.952

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS43TR82560B-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

pacote: 78-TFBGA

Estoque6.848

DRAM

SDRAM - DDR3

2Gb (256M x 8)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS46TR16128C-15HBLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

pacote: 96-TFBGA

Estoque5.344

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42S83200J-6TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

pacote: 54-TSOP (0.400", 10.16mm Width)

Estoque3.504

DRAM

SDRAM

256Mb (32M x 8)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

M24M01-HRMN6TP

STMicroelectronics

IC EEPROM 1MBIT 1MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 500ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque153.096

EEPROM

1Mb (128K x 8)

I2C

1MHz

5ms

500ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

25AA010AT-I/MS

Microchip Technology

IC EEPROM 1KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Estoque5.088

EEPROM

1Kb (128 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

SST39VF020-70-4I-NHE

Microchip Technology

IC FLASH 2MBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

pacote: 32-LCC (J-Lead)

Estoque6.736

FLASH

2Mb (256K x 8)

Parallel

-

20µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AS4C256M8D3LB-12BCN

Alliance Memory, Inc.

IC DRAM 2G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)

pacote: 78-VFBGA

Estoque3.968

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (10.5x8)

S25FL128SAGNFM003

Cypress Semiconductor Corp

IC 128 MB FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

pacote: 8-WDFN Exposed Pad

Estoque6.192

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

IS25WP256D-JMLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 256M SPI 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

pacote: 16-SOIC (0.295", 7.50mm Width)

Estoque6.880

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

104MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S25FL128SAGMFIR03

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

pacote: 16-SOIC (0.295", 7.50mm Width)

Estoque7.792

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S25FL128P0XNFI001M

Cypress Semiconductor Corp

IC MEMORY FLASH NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

pacote: 8-WDFN Exposed Pad

Estoque7.584

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

3µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

CG8273AAT

Cypress Semiconductor Corp

IC SRAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque7.120

-

DS2502-UNW-1155+

Maxim Integrated

IC INTEGRATED CIRCUIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque7.936

-

GS8342QT37BGD-333I

GSI Technology Inc.

IC SRAM 36MBIT PARALLEL 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 36Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x13)

pacote: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous

36Mbit

Parallel

333 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x13)

IS46TR16640C-125JBLA25

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 115°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

pacote: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 115°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

W66AP6NBUAHJ-TR

Winbond Electronics

1GB LPDDR4, X16, 2133MHZ, -40C~1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 1Gbit
Memory Interface: LVSTL_11
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

pacote: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

1Gbit

LVSTL_11

2.133 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

CAT24WC128W

onsemi

IC EEPROM 128KBIT I2C 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 550 ns
Voltage - Supply: 2.5V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

pacote: -

Request a Quote

EEPROM

128Kbit

I2C

1 MHz

10ms

550 ns

2.5V ~ 6V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

M10162040054X0PSAR

Renesas Electronics Corporation

IC RAM 16MBIT SPI 54MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 16Mbit
Memory Interface: SPI
Clock Frequency: 54 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71V ~ 2V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

pacote: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

16Mbit

SPI

54 MHz

-

1.71V ~ 2V

-40°C ~ 105°C

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC