Página 124 - Memória | Circuitos integrados

Nº de peças	Fabricante	Descrição	pacote	Estoque	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PC28F128G18FF TR	Micron Technology Inc.	IC FLASH 128MBIT 96NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 96ns Access Time: 96ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	pacote: 64-TBGA	Estoque2.416	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	133MHz	96ns	96ns	1.7 V ~ 2 V	-30°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
CY7C1270XV18-600BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 600MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	pacote: 165-LBGA	Estoque7.104	SRAM	SRAM - Synchronous, DDR II	36Mb (1M x 36)	Parallel	600MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
MT29C2G24MAAAAHAMD-5 IT	Micron Technology Inc.	IC FLASH/LPDRAM 3GBIT 130VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 2Gb (256M x 8)(NAND), 1Gb (64M x 16)(LPDRAM) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 130-VFBGA Supplier Device Package: 130-VFBGA (8x9)	pacote: 130-VFBGA	Estoque5.024	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	2Gb (256M x 8)(NAND), 1Gb (64M x 16)(LPDRAM)	Parallel	200MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	130-VFBGA	130-VFBGA (8x9)
N02L6181AB27I	ON Semiconductor	IC SRAM 2MBIT 85NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-BGA (6x8)	pacote: 48-LFBGA	Estoque5.808	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	70ns	70ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-BGA (6x8)
MT48H4M16LFB4-10 IT	Micron Technology Inc.	IC SDRAM 64MBIT 100MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 104MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	pacote: 54-VFBGA	Estoque2.784	DRAM	SDRAM - Mobile LPSDR	64Mb (4M x 16)	Parallel	104MHz	15ns	7ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
M29F040B90K6	Micron Technology Inc.	IC FLASH 4MBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.35x13.89)	pacote: 32-LCC (J-Lead)	Estoque5.536	FLASH	FLASH - NOR	4Mb (512K x 8)	Parallel	-	90ns	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.35x13.89)
70V07L35J8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 35NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	pacote: 68-LCC (J-Lead)	Estoque2.016	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
71T75602S150BGI8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 150MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	pacote: 119-BGA	Estoque2.240	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	150MHz	-	3.8ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71V30L25TF	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	pacote: 64-LQFP	Estoque3.696	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
MTFC16GALAHEA-WT TR	Micron Technology Inc.	IC FLASH 128GBIT 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque5.104	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	-	-25°C ~ 85°C (TA)	-	-	-
CY62167GN30-45BVXIT	Cypress Semiconductor Corp	IC SRAM 16MBIT 45NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-BGA (6x8)	pacote: 48-VFBGA	Estoque7.408	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-BGA (6x8)
S29GL512T10FAI010	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque5.632	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
CY7C1041G30-10ZSXET	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	pacote: 44-TSOP (0.400", 10.16mm Width)	Estoque2.272	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
S25FL128SAGMFVR00	Cypress Semiconductor Corp	IC 128MEG FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	pacote: 16-SOIC (0.295", 7.50mm Width)	Estoque7.392	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
AS4C4M32SA-6TCNTR	Alliance Memory, Inc.	IC SDRAM 128MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	pacote: 86-TFSOP (0.400", 10.16mm Width)	Estoque6.736	DRAM	SDRAM	128Mb (4M x 32)	Parallel	166MHz	2ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
MX29LV400CTXEI-90G	Macronix	IC FLASH 4MBIT 90NS 48LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA, CSPBGA Supplier Device Package: 48-LFBGA, CSP (6x8)	pacote: 48-LFBGA, CSPBGA	Estoque2.912	FLASH	FLASH - NOR	4Mb (512K x 8)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA, CSPBGA	48-LFBGA, CSP (6x8)
25LC160DT-E/MNY	Microchip Technology	IC EEPROM 16KBIT 10MHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	pacote: 8-WFDFN Exposed Pad	Estoque4.416	EEPROM	EEPROM	16Kb (2K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
24AA08T-I/MNY	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (256 x 8 x 4) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	pacote: 8-WFDFN Exposed Pad	Estoque24.888	EEPROM	EEPROM	8Kb (256 x 8 x 4)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
CY7C1382DV33-167BZI	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	pacote: 165-LBGA	Estoque4.912	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
24CW320-I/SN	Microchip Technology	IC EEPROM 32K I2C 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque12.510	EEPROM	EEPROM	32Kb (4K x 8)	I²C	1MHz	5ms	450ns	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MX25U12835FBBI-10G	Macronix	IC FLASH 128MBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque5.600	-	-	-	-	-	-	-	-	-	-	-	-
MTFC16GAKAEJP-4M IT TR	Micron Technology Inc.	IC FLASH 128G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	pacote: 153-VFBGA	Estoque5.792	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
W66AP6NBQAGJ-TR	Winbond Electronics	1GB LPDDR4, X16, 1866MHZ, -40C~1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 1Gbit Memory Interface: LVSTL_11 Clock Frequency: 1.867 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	pacote: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	1Gbit	LVSTL_11	1.867 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MM54C200D-883	National Semiconductor	STANDARD SRAM, 256X1 Memory Type: Volatile Memory Format: RAM Technology: RAM Memory Size: 256bit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 520 ns Voltage - Supply: 3V ~ 15V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CDIP	pacote: -	Request a Quote	RAM	RAM	256bit	Parallel	-	-	520 ns	3V ~ 15V	-55°C ~ 125°C (TA)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CDIP
M10042040108X0PWAR	Renesas Electronics Corporation	IC RAM 4MBIT 108MHZ 8DFN Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mbit Memory Interface: - Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71V ~ 2V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	pacote: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	4Mbit	-	108 MHz	-	-	1.71V ~ 2V	-40°C ~ 105°C	Surface Mount	8-WDFN Exposed Pad	8-DFN (5x6)
811600-78030870	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SM662GXE-BEST-1	Silicon Motion, Inc.	IC FLASH 2TBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 2Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	pacote: -	Request a Quote	FLASH	FLASH - NAND (TLC)	2Tbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
R1RW0416DGE-2PI-B1	Renesas Electronics Corporation	IC SRAM 4MBIT PARALLEL 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	pacote: -	Request a Quote	SRAM	SRAM	4Mbit	Parallel	-	12ns	12 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ

PC28F128G18FF TR

Micron Technology Inc.

IC FLASH 128MBIT 96NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 96ns
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

pacote: 64-TBGA

Estoque2.416

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

133MHz

96ns

1.7 V ~ 2 V

-30°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

CY7C1270XV18-600BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 600MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

pacote: 165-LBGA

Estoque7.104

SRAM

SRAM - Synchronous, DDR II

36Mb (1M x 36)

Parallel

600MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

MT29C2G24MAAAAHAMD-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 3GBIT 130VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 2Gb (256M x 8)(NAND), 1Gb (64M x 16)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 130-VFBGA
Supplier Device Package: 130-VFBGA (8x9)

pacote: 130-VFBGA

Estoque5.024

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

2Gb (256M x 8)(NAND), 1Gb (64M x 16)(LPDRAM)

Parallel

200MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

130-VFBGA

130-VFBGA (8x9)

N02L6181AB27I

ON Semiconductor

IC SRAM 2MBIT 85NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-BGA (6x8)

pacote: 48-LFBGA

Estoque5.808

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

70ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-BGA (6x8)

MT48H4M16LFB4-10 IT

Micron Technology Inc.

IC SDRAM 64MBIT 100MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

pacote: 54-VFBGA

Estoque2.784

DRAM

SDRAM - Mobile LPSDR

64Mb (4M x 16)

Parallel

104MHz

15ns

7ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

M29F040B90K6

Micron Technology Inc.

IC FLASH 4MBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)

pacote: 32-LCC (J-Lead)

Estoque5.536

FLASH

FLASH - NOR

4Mb (512K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.35x13.89)

70V07L35J8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

pacote: 68-LCC (J-Lead)

Estoque2.016

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

71T75602S150BGI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 150MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

pacote: 119-BGA

Estoque2.240

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

150MHz

-

3.8ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71V30L25TF

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

pacote: 64-LQFP

Estoque3.696

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

MTFC16GALAHEA-WT TR

Micron Technology Inc.

IC FLASH 128GBIT 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque5.104

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

-25°C ~ 85°C (TA)

-

CY62167GN30-45BVXIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 45NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-BGA (6x8)

pacote: 48-VFBGA

Estoque7.408

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-BGA (6x8)

S29GL512T10FAI010

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque5.632

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

CY7C1041G30-10ZSXET

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

pacote: 44-TSOP (0.400", 10.16mm Width)

Estoque2.272

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

S25FL128SAGMFVR00

Cypress Semiconductor Corp

IC 128MEG FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

pacote: 16-SOIC (0.295", 7.50mm Width)

Estoque7.392

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

AS4C4M32SA-6TCNTR

Alliance Memory, Inc.

IC SDRAM 128MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

pacote: 86-TFSOP (0.400", 10.16mm Width)

Estoque6.736

DRAM

SDRAM

128Mb (4M x 32)

Parallel

166MHz

2ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

MX29LV400CTXEI-90G

Macronix

IC FLASH 4MBIT 90NS 48LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA, CSPBGA
Supplier Device Package: 48-LFBGA, CSP (6x8)

pacote: 48-LFBGA, CSPBGA

Estoque2.912

FLASH

FLASH - NOR

4Mb (512K x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA, CSPBGA

48-LFBGA, CSP (6x8)

25LC160DT-E/MNY

Microchip Technology

IC EEPROM 16KBIT 10MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

pacote: 8-WFDFN Exposed Pad

Estoque4.416

EEPROM

16Kb (2K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

24AA08T-I/MNY

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (256 x 8 x 4)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

pacote: 8-WFDFN Exposed Pad

Estoque24.888

EEPROM

8Kb (256 x 8 x 4)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

CY7C1382DV33-167BZI

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

pacote: 165-LBGA

Estoque4.912

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

24CW320-I/SN

Microchip Technology

IC EEPROM 32K I2C 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque12.510

EEPROM

32Kb (4K x 8)

I²C

1MHz

5ms

450ns

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MX25U12835FBBI-10G

Macronix

IC FLASH 128MBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque5.600

-

MTFC16GAKAEJP-4M IT TR

Micron Technology Inc.

IC FLASH 128G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

pacote: 153-VFBGA

Estoque5.792

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

W66AP6NBQAGJ-TR

Winbond Electronics

1GB LPDDR4, X16, 1866MHZ, -40C~1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 1Gbit
Memory Interface: LVSTL_11
Clock Frequency: 1.867 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

pacote: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

1Gbit

LVSTL_11

1.867 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MM54C200D-883

National Semiconductor

STANDARD SRAM, 256X1

Memory Type: Volatile
Memory Format: RAM
Technology: RAM
Memory Size: 256bit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 520 ns
Voltage - Supply: 3V ~ 15V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CDIP

pacote: -

Request a Quote

RAM

256bit

Parallel

-

520 ns

3V ~ 15V

-55°C ~ 125°C (TA)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CDIP

M10042040108X0PWAR

Renesas Electronics Corporation

IC RAM 4MBIT 108MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mbit
Memory Interface: -
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71V ~ 2V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

pacote: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

4Mbit

-

108 MHz

-

1.71V ~ 2V

-40°C ~ 105°C

Surface Mount

8-WDFN Exposed Pad

8-DFN (5x6)

811600-78030870

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-

SM662GXE-BEST-1

Silicon Motion, Inc.

IC FLASH 2TBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 2Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

pacote: -

Request a Quote

FLASH

FLASH - NAND (TLC)

2Tbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

R1RW0416DGE-2PI-B1

Renesas Electronics Corporation

IC SRAM 4MBIT PARALLEL 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

pacote: -

Request a Quote

SRAM

4Mbit

Parallel

-

12ns

12 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ