Página 1139 - Memória | Circuitos integrados | Heisener Electronics
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Memória

Registros 62.144
Página  1.139/2.072
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
STK11C68-5L45M
Cypress Semiconductor Corp

IC NVSRAM 64KBIT 45NS 28LCC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-LCC
  • Supplier Device Package: 28-LCC (13.94 x 8.89)
pacote: 28-LCC
Estoque5.856
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
28-LCC
28-LCC (13.94 x 8.89)
CAT28C16AWI90
ON Semiconductor

IC EEPROM 16KBIT 90NS 24SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
pacote: 24-SOIC (0.295", 7.50mm Width)
Estoque4.608
EEPROM
EEPROM
16Kb (2K x 8)
Parallel
-
5ms
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
CY62136VNLL-70ZSXE
Cypress Semiconductor Corp

IC SRAM 2MBIT 70NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacote: 44-TSOP (0.400", 10.16mm Width)
Estoque2.992
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
CYK256K16SCBU-70BVXI
Cypress Semiconductor Corp

IC PSRAM 4MBIT 70NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacote: 48-VFBGA
Estoque2.112
PSRAM
PSRAM (Pseudo SRAM)
4Mb (256K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.3 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
MT47H32M16BN-37E IT:D TR
Micron Technology Inc.

IC SDRAM 512MBIT 266MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 500ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (10x12.5)
pacote: 84-TFBGA
Estoque5.728
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
267MHz
15ns
500ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (10x12.5)
MT28F800B3WG-9 BET
Micron Technology Inc.

IC FLASH 8MBIT 90NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacote: 48-TFSOP (0.724", 18.40mm Width)
Estoque6.320
FLASH
FLASH - NOR
8Mb (1M x 8, 512K x 16)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
JS28F128P30T85A
Micron Technology Inc.

IC FLASH 128MBIT 85NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
pacote: 56-TFSOP (0.724", 18.40mm Width)
Estoque4.768
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
40MHz
85ns
85ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
MT46V32M4P-6T:D
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 128Mb (32M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
pacote: 66-TSSOP (0.400", 10.16mm Width)
Estoque7.296
DRAM
SDRAM - DDR
128Mb (32M x 4)
Parallel
167MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
hot M27C64A-20F1
STMicroelectronics

IC EPROM UV 64KBIT 200NS 28CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.600", 15.24mm) Window
  • Supplier Device Package: 28-CDIP Frit Seal with Window
pacote: 28-CDIP (0.600", 15.24mm) Window
Estoque31.620
EPROM
EPROM - UV
64Kb (8K x 8)
Parallel
-
-
200ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-CDIP (0.600", 15.24mm) Window
28-CDIP Frit Seal with Window
DS1265Y-100
Maxim Integrated

IC NVSRAM 8MBIT 100NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
pacote: 36-DIP Module (0.600", 15.24mm)
Estoque6.128
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
CY7C1413KV18-300BZCT
Cypress Semiconductor Corp

IC SRAM 36MBIT 300MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 36Mb (2M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacote: 165-LBGA
Estoque2.704
SRAM
SRAM - Synchronous, QDR II
36Mb (2M x 18)
Parallel
300MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
6116LA120DB
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 120NS 24CDIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120ns
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-CDIP (0.600", 15.24mm)
  • Supplier Device Package: 24-CDIP
pacote: 24-CDIP (0.600", 15.24mm)
Estoque3.280
SRAM
SRAM - Asynchronous
16Kb (2K x 8)
Parallel
-
120ns
120ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
24-CDIP (0.600", 15.24mm)
24-CDIP
AT88SC0808C-MP
Microchip Technology

IC EEPROM 8KBIT 5MHZ M2P

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 35µs
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 P, Smart Card Module (ISO)
  • Supplier Device Package: M2 - P Module (ISO)
pacote: M2 P, Smart Card Module (ISO)
Estoque5.424
EEPROM
EEPROM
8Kb (1K x 8)
I2C
5MHz
5ms
35µs
2.7 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
M2 P, Smart Card Module (ISO)
M2 - P Module (ISO)
IS25LQ010B-JBLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.209", 5.30mm Width)
Estoque5.216
FLASH
FLASH - NOR
1Mb (128K x 8)
SPI - Quad I/O
104MHz
800µs
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
CY14B256PA-SFXI
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 40MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque6.144
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
AS7C256A-12TCN
Alliance Memory, Inc.

IC SRAM 256KBIT 12NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
pacote: 28-TSSOP (0.465", 11.80mm Width)
Estoque8.292
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
hot CY7C1312KV18-300BZXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 300MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacote: 165-LBGA
Estoque15.960
SRAM
SRAM - Synchronous, QDR II
18Mb (1M x 18)
Parallel
300MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
AT25080B-WWU11L
Microchip Technology

IC EEPROM 8K SPI 20MHZ 8WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
pacote: Die
Estoque7.600
EEPROM
EEPROM
8Kb (1K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Wafer
MX29LV320EBXBI-70G
Macronix

IC FLASH 32MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque5.408
-
-
-
-
-
-
-
-
-
-
-
-
QMP29GL064A90TFIR20H
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.448
-
-
-
-
-
-
-
-
-
-
-
-
70V38L12PF8
IDT, Integrated Device Technology Inc

IC SRAM 1.125M PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1.125Mb (64K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacote: 100-LQFP
Estoque6.896
SRAM
SRAM - Dual Port, Asynchronous
1.125Mb (64K x 18)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
70V08S20PFI8
IDT, Integrated Device Technology Inc

IC SRAM 512K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacote: 100-LQFP
Estoque7.840
SRAM
SRAM - Dual Port, Asynchronous
512Kb (64K x 8)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
NV25160DTHFT3G
ON Semiconductor

IC EEPROM SPI SER 16KB 8TSSOP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque2.032
-
-
-
-
-
-
-
-
-
-
-
-
W632GU6MB15J
Winbond Electronics

IC SDRAM DDR3L 2G 96WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
pacote: 96-VFBGA
Estoque7.344
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
667MHz
15ns
20ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)
BR25H1MFJ-5ACE2
Rohm Semiconductor

1MBIT, SPI BUS, HIGH SPEED WRITE

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
pacote: -
Estoque7.140
EEPROM
EEPROM
1Mbit
SPI
20 MHz
3.5ms
-
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
CY7C1362A-166AC
Infineon Technologies

IC SRAM 9MBIT 166MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacote: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
9Mbit
Parallel
166 MHz
-
3.5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
AS6C8016B-55BINTR
Alliance Memory, Inc.

IC SRAM 8MB PARALLEL 48FPBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
48-LFBGA
48-TFBGA (6x8)
CY7C199CN-12VXAKJ
Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
pacote: -
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SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
W25Q80BVWA
Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 104MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.5V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
FLASH
FLASH - NOR
8Mbit
SPI - Quad I/O
104 MHz
50µs, 3ms
6 ns
2.5V ~ 3.6V
-40°C ~ 105°C (TA)
-
-
-
MTFC64GAZAOTD-AAT
Micron Technology Inc.

UFS 512G

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 512Gbit
  • Memory Interface: UFS2.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.557
FLASH
FLASH - NAND (SLC)
512Gbit
UFS2.1
-
-
-
-
-40°C ~ 105°C
-
-
-