Página 1083 - Memória | Circuitos integrados

Nº de peças	Fabricante	Descrição	pacote	Estoque	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT42L256M64D4EV-18 WT:A	Micron Technology Inc.	IC SDRAM 16GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 253-TFBGA Supplier Device Package: 253-FBGA (11x11)	pacote: 253-TFBGA	Estoque5.296	DRAM	SDRAM - Mobile LPDDR2	16Gb (256M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	253-TFBGA	253-FBGA (11x11)
IDT71V25761YSA166BG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	pacote: 119-BGA	Estoque5.136	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
STK15C88-SF45TR	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 45NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	pacote: 28-SOIC (0.342", 8.69mm Width)	Estoque7.840	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
IS61LF51236A-6.5B2I-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 6.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BBGA Supplier Device Package: 119-PBGA (14x22)	pacote: 119-BBGA	Estoque2.704	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	119-BBGA	119-PBGA (14x22)
MT47H512M4THN-37E:E TR	Micron Technology Inc.	IC SDRAM 2GBIT 266MHZ 63FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: 15ns Access Time: 500ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 63-FBGA Supplier Device Package: 63-FBGA (9x11.5)	pacote: 63-FBGA	Estoque4.384	DRAM	SDRAM - DDR2	2Gb (512M x 4)	Parallel	267MHz	15ns	500ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	63-FBGA	63-FBGA (9x11.5)
AT24C512B-TH-T	Microchip Technology	IC EEPROM 512KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacote: 8-TSSOP (0.173", 4.40mm Width)	Estoque43.632	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	900ns	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IS62WV2568BLL-70BI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 70NS 36MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-MBGA Supplier Device Package: 36-miniBGA (8x10)	pacote: 36-MBGA	Estoque7.808	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	70ns	70ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	36-MBGA	36-miniBGA (8x10)
AT27C512R-90PC	Microchip Technology	IC OTP 512KBIT 90NS 28DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	pacote: 28-DIP (0.600", 15.24mm)	Estoque10.008	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT27C256R-12JI	Microchip Technology	IC OTP 256KBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	pacote: 32-LCC (J-Lead)	Estoque3.856	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
70V9159L7PFI	IDT, Integrated Device Technology Inc	IC SRAM 72KBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	pacote: 100-LQFP	Estoque6.496	SRAM	SRAM - Dual Port, Synchronous	72Kb (8K x 9)	Parallel	-	-	7.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
PC28F512P30EFB TR	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-VBGA Supplier Device Package: 64-EasyBGA (8x10)	pacote: 64-VBGA	Estoque2.112	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	64-VBGA	64-EasyBGA (8x10)
IS61LPS25618EC-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	pacote: 100-LQFP	Estoque6.416	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
FM25L04B-G	Cypress Semiconductor Corp	IC FRAM 4KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque16.956	FRAM	FRAM (Ferroelectric RAM)	4Kb (512 x 8)	SPI	20MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BR93G46NUX-3ATTR	Rohm Semiconductor	MICROWIRE BUS 1KBIT(64X16BIT) EE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	pacote: 8-UFDFN Exposed Pad	Estoque32.436	EEPROM	EEPROM	1Kb (64 x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
R1RP0416DSB-2LR#D1	Renesas Electronics America	IC SRAM IBIS ASYNC Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	pacote: 44-TSOP (0.400", 10.16mm Width)	Estoque5.392	SRAM	SRAM	4Mb (256K x 16)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT29C8G96MAZBBDKD-48 IT	Micron Technology Inc.	IC FLASH RAM 8G PARALLEL 208MHZ Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque2.832	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)	Parallel	208MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	-	-	-
GS82582T19GE-450I	GSI Technology Inc.	IC SRAM 288MBIT PAR 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous, DDR II+ Memory Size: 288Mbit Memory Interface: Parallel Clock Frequency: 450 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x17)	pacote: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous, DDR II+	288Mbit	Parallel	450 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x17)
7133LA55G-S2703	Renesas Electronics Corporation	IC SRAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 68-BPGA Supplier Device Package: 68-PGA (29.46x29.46)	pacote: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	32Kbit	Parallel	-	55ns	55 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	68-BPGA	68-PGA (29.46x29.46)
MT62F1536M32D4DS-026-AAT-B	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	pacote: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	3.2 GHz	-	-	-	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT53E512M32D4NQ-053-RS-WT-F-TR	Micron Technology Inc.	LPDDR4 16G 512MX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MF28F010-25	Intel	IC FLASH 1MBIT PARALLEL Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 250ns Access Time: 250 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	FLASH	FLASH	1Mbit	Parallel	-	250ns	250 ns	4.5V ~ 5.5V	-40°C ~ 125°C (TC)	-	-	-
LE25LB2562M-TLM-E	Sanyo	256KBIT SERIAL SPI EEPROM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS43TR85120A-107MBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	pacote: -	Request a Quote	DRAM	SDRAM - DDR3	4Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
CY7C1059H30-10ZSXIT	Infineon Technologies	ASYNC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	pacote: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	10ns	10 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT29VZZZBD9GULPR-046-W-214	Micron Technology Inc.	EMCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S25HS512TFABHM010	Infineon Technologies	IC FLASH 512MBIT SPI/QUAD 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	pacote: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Quad I/O, QPI	166 MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
EA3-16B001	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAT93C56W-TE13	onsemi	IC EEPROM 2KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: - Access Time: 250 ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	EEPROM	EEPROM	2Kbit	Microwire	2 MHz	-	250 ns	2.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT62F8D1AEK-DC-TR	Micron Technology Inc.	LPDDR5 64G 1GX64 FBGA 8DP Y31M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.01V ~ 1.12V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	-	-	-	1.01V ~ 1.12V	-	-	-	-
IS43LR16160H-6BL-TR	ISSI, Integrated Silicon Solution Inc	256M, 1.8V, Mobile DDR, 16Mx16, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x10)	pacote: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	256Mbit	Parallel	166 MHz	15ns	5.5 ns	1.7V ~ 1.95V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x10)

MT42L256M64D4EV-18 WT:A

Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 253-TFBGA
Supplier Device Package: 253-FBGA (11x11)

pacote: 253-TFBGA

Estoque5.296

DRAM

SDRAM - Mobile LPDDR2

16Gb (256M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

253-TFBGA

253-FBGA (11x11)

IDT71V25761YSA166BG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

pacote: 119-BGA

Estoque5.136

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

STK15C88-SF45TR

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

pacote: 28-SOIC (0.342", 8.69mm Width)

Estoque7.840

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

IS61LF51236A-6.5B2I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 6.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BBGA
Supplier Device Package: 119-PBGA (14x22)

pacote: 119-BBGA

Estoque2.704

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

119-BBGA

119-PBGA (14x22)

MT47H512M4THN-37E:E TR

Micron Technology Inc.

IC SDRAM 2GBIT 266MHZ 63FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 500ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 63-FBGA
Supplier Device Package: 63-FBGA (9x11.5)

pacote: 63-FBGA

Estoque4.384

DRAM

SDRAM - DDR2

2Gb (512M x 4)

Parallel

267MHz

15ns

500ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

63-FBGA

63-FBGA (9x11.5)

AT24C512B-TH-T

Microchip Technology

IC EEPROM 512KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacote: 8-TSSOP (0.173", 4.40mm Width)

Estoque43.632

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

900ns

1.8 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IS62WV2568BLL-70BI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 70NS 36MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-MBGA
Supplier Device Package: 36-miniBGA (8x10)

pacote: 36-MBGA

Estoque7.808

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

70ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

36-MBGA

36-miniBGA (8x10)

AT27C512R-90PC

Microchip Technology

IC OTP 512KBIT 90NS 28DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

pacote: 28-DIP (0.600", 15.24mm)

Estoque10.008

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT27C256R-12JI

Microchip Technology

IC OTP 256KBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

pacote: 32-LCC (J-Lead)

Estoque3.856

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

70V9159L7PFI

IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

pacote: 100-LQFP

Estoque6.496

SRAM

SRAM - Dual Port, Synchronous

72Kb (8K x 9)

Parallel

-

7.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

PC28F512P30EFB TR

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-VBGA
Supplier Device Package: 64-EasyBGA (8x10)

pacote: 64-VBGA

Estoque2.112

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

64-VBGA

64-EasyBGA (8x10)

IS61LPS25618EC-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

pacote: 100-LQFP

Estoque6.416

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

FM25L04B-G

Cypress Semiconductor Corp

IC FRAM 4KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque16.956

FRAM

FRAM (Ferroelectric RAM)

4Kb (512 x 8)

SPI

20MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BR93G46NUX-3ATTR

Rohm Semiconductor

MICROWIRE BUS 1KBIT(64X16BIT) EE

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

pacote: 8-UFDFN Exposed Pad

Estoque32.436

EEPROM

1Kb (64 x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

R1RP0416DSB-2LR#D1

Renesas Electronics America

IC SRAM IBIS ASYNC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

pacote: 44-TSOP (0.400", 10.16mm Width)

Estoque5.392

SRAM

4Mb (256K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT29C8G96MAZBBDKD-48 IT

Micron Technology Inc.

IC FLASH RAM 8G PARALLEL 208MHZ

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque2.832

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)

Parallel

208MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

-

GS82582T19GE-450I

GSI Technology Inc.

IC SRAM 288MBIT PAR 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous, DDR II+
Memory Size: 288Mbit
Memory Interface: Parallel
Clock Frequency: 450 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x17)

pacote: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous, DDR II+

288Mbit

Parallel

450 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x17)

7133LA55G-S2703

Renesas Electronics Corporation

IC SRAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)

pacote: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

32Kbit

Parallel

-

55ns

55 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

68-BPGA

68-PGA (29.46x29.46)

MT62F1536M32D4DS-026-AAT-B

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

pacote: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

3.2 GHz

-

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT53E512M32D4NQ-053-RS-WT-F-TR

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-

MF28F010-25

Intel

IC FLASH 1MBIT PARALLEL

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 250ns
Access Time: 250 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

FLASH

1Mbit

Parallel

-

250ns

250 ns

4.5V ~ 5.5V

-40°C ~ 125°C (TC)

-

LE25LB2562M-TLM-E

Sanyo

256KBIT SERIAL SPI EEPROM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-

IS43TR85120A-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

pacote: -

Request a Quote

DRAM

SDRAM - DDR3

4Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

CY7C1059H30-10ZSXIT

Infineon Technologies

ASYNC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

pacote: -

Request a Quote

SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

10ns

10 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT29VZZZBD9GULPR-046-W-214

Micron Technology Inc.

EMCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-

S25HS512TFABHM010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

pacote: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Quad I/O, QPI

166 MHz

-

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

EA3-16B001

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-

CAT93C56W-TE13

onsemi

IC EEPROM 2KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: -
Access Time: 250 ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: -

Request a Quote

EEPROM

2Kbit

Microwire

2 MHz

-

250 ns

2.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT62F8D1AEK-DC-TR

Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA 8DP Y31M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.01V ~ 1.12V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

-

1.01V ~ 1.12V

-

IS43LR16160H-6BL-TR

ISSI, Integrated Silicon Solution Inc

256M, 1.8V, Mobile DDR, 16Mx16,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x10)

pacote: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR

256Mbit

Parallel

166 MHz

15ns

5.5 ns

1.7V ~ 1.95V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x10)