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Infineon Technologies Produtos - PMIC - controladores de gateway

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IR2128S
Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque5.968
Single
1
IGBT, N-Channel MOSFET
12 V ~ 20 V
0.8V, 3V
250mA, 500mA
Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2128
Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8-DIP

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacote: 8-DIP (0.300", 7.62mm)
Estoque9.096
Single
1
IGBT, N-Channel MOSFET
12 V ~ 20 V
0.8V, 3V
250mA, 500mA
Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IR2127STR
Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque70.656
Single
1
IGBT, N-Channel MOSFET
12 V ~ 20 V
0.8V, 3V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
98-0066
Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.776
Single
1
IGBT, N-Channel MOSFET
12 V ~ 20 V
0.8V, 3V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2125S
Infineon Technologies

IC MOSFET DRIVER LIMITING 16SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 0 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.6A, 3.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 43ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque11.172
Single
1
IGBT, N-Channel MOSFET
0 V ~ 18 V
0.8V, 2.2V
1.6A, 3.3A
Non-Inverting
500V
43ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot IR2122
Infineon Technologies

IC MOSFET DRIVER HIGH-SIDE 8-DIP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 13 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 130mA, 130mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 250ns, 250ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacote: 8-DIP (0.300", 7.62mm)
Estoque127.536
Single
1
IGBT, N-Channel MOSFET
13 V ~ 20 V
0.8V, 3V
130mA, 130mA
Inverting
600V
250ns, 250ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IR2121
Infineon Technologies

IC MOSFET DRIVER LOW-SIDE 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.6A, 3.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 43ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacote: 8-DIP (0.300", 7.62mm)
Estoque17.016
Single
1
IGBT, N-Channel MOSFET
12 V ~ 18 V
0.8V, 2.2V
1.6A, 3.3A
Non-Inverting
-
43ns, 26ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
98-0231
Infineon Technologies

IC MOSFET DRIVER HIGH-SIDE 8SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.056
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2118
Infineon Technologies

IC MOSFET DRIVER HIGH-SIDE 8-DIP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacote: 8-DIP (0.300", 7.62mm)
Estoque393.552
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IR2117STR
Infineon Technologies

IC MOSFET DRIVER SGL-CH 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque202.212
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
98-0065
Infineon Technologies

IC MOSFET DRIVER SGL-CH 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque6.256
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2112STR
Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque48.204
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot IR2112S
Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque232.416
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot IR2111STR
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 8.3V, 12.6V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque191.172
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
8.3V, 12.6V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2111S
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 8.3V, 12.6V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque89.964
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
8.3V, 12.6V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2110STR
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque15.780
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
500V
25ns, 17ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot IR2110S
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque273.372
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
500V
25ns, 17ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IR2110-1
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
  • Supplier Device Package: 14-PDIP
pacote: 14-DIP (0.300", 7.62mm), 13 Leads
Estoque3.808
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
500V
25ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 13 Leads
14-PDIP
hot IR2109STR
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque48.588
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2109S
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque307.224
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR21094S
Infineon Technologies

IC DRIVER HALF-BRIDGE 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque76.596
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot IR21094
Infineon Technologies

IC DRIVER HALF-BRIDGE 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
pacote: 14-DIP (0.300", 7.62mm)
Estoque15.324
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
hot IR2109
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacote: 8-DIP (0.300", 7.62mm)
Estoque124.524
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot IR2108S
Infineon Technologies

IC DRIVER HALF BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque182.448
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
98-0317
Infineon Technologies

IC DRIVER HALF BRIDGE 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque6.240
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
98-0255
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
pacote: 14-DIP (0.300", 7.62mm)
Estoque6.576
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
hot IR2107S
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque8.544
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
200mA, 350mA
Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR21074S
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque6.160
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
200mA, 350mA
Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot IR21074
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
pacote: 14-DIP (0.300", 7.62mm)
Estoque5.200
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
200mA, 350mA
Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
hot IR2106S
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque538.128
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC