Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET_(75V 120V(
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 2.4V @ 39µA | 39 nC @ 10 V | 2700 pF @ 25 V | ±20V | - | 71W (Tc) | 26.3mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 12A D2PAK
|
pacote: - |
Estoque213 |
|
MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4V @ 190µA | 18 nC @ 10 V | 761 pF @ 400 V | ±20V | - | 53W (Tc) | 280mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 31A/100A TDSON
|
pacote: - |
Estoque49.959 |
|
MOSFET (Metal Oxide) | 60 V | 31A (Ta), 100A (Tc) | 6V, 10V | 3.3V @ 95µA | 95 nC @ 10 V | 6500 pF @ 30 V | ±20V | - | 3W (Ta), 167W (Tc) | 1.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
pacote: - |
Estoque2.934 |
|
SiCFET (Silicon Carbide) | 650 V | 6A (Tc) | 18V | 5.7V @ 1.1mA | 6 nC @ 18 V | 201 pF @ 400 V | +23V, -5V | - | 65W (Tc) | 346mOhm @ 3.6A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
TRENCH <= 40V
|
pacote: - |
Estoque12.000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 20.7A TO247-3
|
pacote: - |
Estoque6.354 |
|
MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 208W (Tc) | 190mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 9A D2PAK
|
pacote: - |
Estoque16.677 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 4V @ 140µA | 13 nC @ 10 V | 555 pF @ 400 V | ±20V | - | 41W (Tc) | 360mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Estoque11.970 |
|
MOSFET (Metal Oxide) | 150 V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 2.3V @ 60µA | 29 nC @ 10 V | 2000 pF @ 75 V | ±20V | - | 2.5W (Ta), 96W (Tc) | 15.2mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 950V 6A TO251-3
|
pacote: - |
Estoque4.404 |
|
MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 3.5V @ 140µA | 15 nC @ 10 V | 478 pF @ 400 V | ±20V | - | 52W (Tc) | 1.2Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 600V 6A TO220
|
pacote: - |
Estoque1.500 |
|
MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4V @ 80µA | 9 nC @ 10 V | 363 pF @ 400 V | ±20V | - | 21W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 150V 186A TO247-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 186A (Tc) | 10V | 4.6V @ 264µA | 100 nC @ 10 V | 6000 pF @ 75 V | ±20V | - | 341W (Tc) | 4.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 4.6V @ 160µA | 61 nC @ 10 V | 4700 pF @ 75 V | ±20V | - | 214W (Tc) | 7.6mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
650V COOLMOS CFD7A SJ POWER DEVI
|
pacote: - |
Estoque6 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4.5V @ 260µA | 23 nC @ 10 V | 1044 pF @ 400 V | ±20V | - | 63W (Tc) | 230mOhm @ 5.2A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 36A/163A 2WDSON
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 36A (Ta), 163A (Tc) | 4.5V, 10V | 2V @ 250µA | 62 nC @ 10 V | 4400 pF @ 12 V | ±20V | - | 2.8W (Ta), 57W (Tc) | 1.3mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 10V | 2V @ 21µA | 22 nC @ 10 V | 444 pF @ 25 V | ±20V | - | 50W (Tc) | 154mOhm @ 8.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 560V 21A TO247-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 3.9V @ 1mA | 95 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 208W (Tc) | 190mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
Infineon Technologies |
SIC_DISCRETE
|
pacote: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 104A (Tc) | 18V, 20V | 5.1V @ 15mA | 82 nC @ 20 V | 2667 pF @ 800 V | +23V, -5V | - | 468W (Tc) | 25mOhm @ 43A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
pacote: - |
Estoque2.925 |
|
MOSFET (Metal Oxide) | 40 V | 175A | 10V | - | 107 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-43 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 3.5V @ 440µA | 45 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET 100V 10A DIE
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 10A | 10V | - | - | - | - | - | - | 180mOhm @ 10A, 10V | - | Surface Mount | Die | Die |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 30A (Tc) | - | 3V @ 250µA | 92 nC @ 10 V | 1870 pF @ 25 V | - | - | 120W (Tc) | 14mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 8HSOF
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | TOLL | 8-PowerSFN |
||
Infineon Technologies |
SIC_DISCRETE
|
pacote: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 69A (Tc) | 18V, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | 1738 pF @ 800 V | +23V, -5V | - | 326W (Tc) | 38mOhm @ 27A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-14 | TO-247-4 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 3.8V @ 91µA | 68 nC @ 10 V | 4750 pF @ 37.5 V | ±20V | - | 150W (Tc) | 5.2mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 40V 31A/205A 8TSON
|
pacote: - |
Estoque37.602 |
|
MOSFET (Metal Oxide) | 40 V | 31A (Ta), 205A (Tc) | - | 2V @ 51µA | 55 nC @ 10 V | 3900 pF @ 20 V | ±20V | - | 2.5W (Ta), 107W (Tc) | 1.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-4 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET P-CH 60V 1.1A SOT223-4
|
pacote: - |
Estoque10.359 |
|
MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 4.5V, 10V | 2V @ 77µA | 4 nC @ 10 V | 120 pF @ 30 V | ±20V | - | 1.8W (Ta), 4.2W (Tc) | 750mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |