IXYS Produtos

IXGH16N170AH1

IXYS

IGBT 1700V 16A 190W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
• Power - Max: 190W
• Switching Energy: 900µJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 36ns/160ns
• Test Condition: 850V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 230ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

pacote: TO-247-3

MDI145-12A3

IXYS

IGBT NPT BUCK 1200V 160A Y4-M5

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 700W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector Cutoff (Max): 6mA
• Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Supplier Device Package: Y4-M5

pacote: Y4-M5

IXTQ180N055T

IXYS

MOSFET N-CH 55V 180A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

pacote: TO-3P-3, SC-65-3

IXTA8PN50P

IXYS

MOSFET N-CH 500V 8A D2-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFK32N90P

IXYS

MOSFET N-CH 900V 32A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacote: TO-264-3, TO-264AA

IXTQ40N50Q

IXYS

MOSFET N-CH 500V 40A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

pacote: TO-3P-3, SC-65-3

IXFH60N65X2

IXYS

MOSFET N-CH 650V 60A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: -
• Package / Case: TO-247-3

pacote: TO-247-3

IXFN110N60P3

IXYS

MOSFET N-CH 600V 90A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1500W (Tc)
• Rds On (Max) @ Id, Vgs: 56 mOhm @ 55A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

IXFK90N20Q

IXYS

MOSFET N-CH 200V 90A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacote: TO-264-3, TO-264AA

GMM3X60-015X2-SMD

IXYS

MOSFET 6N-CH 150V 50A 24-SMD

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 50A
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: ISOPLUS-DIL?
• Supplier Device Package: ISOPLUS-DIL?

pacote: ISOPLUS-DIL?

MCD200-14IO1

IXYS

MOD THYRISTOR/DIODE 1400V Y4-M6

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 216A
• Current - On State (It (RMS)) (Max): 340A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8600A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6

pacote: Y4-M6

DSS10-0045A

IXYS

DIODE SCHOTTKY 45V 10A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-220-2

MDA950-12N1W

IXYS

DIODE MODULE 1.2KV 950A

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 950A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacote: Module

MDMA380P1600KC

IXYS

DIODE MODULE 1.6KV 380A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 380A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacote: Module

DSA50C100HB

IXYS

DIODE ARRAY SCHOTTKY 100V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 450µA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

pacote: TO-247-3

VBO160-12NO7

IXYS

DIODE BRIDGE 174A 1200V PWS-E-1

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 174A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 160A
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-E
• Supplier Device Package: PWS-E

pacote: PWS-E

VUO35-14NO7

IXYS

RECT BRIDGE 3PH 38A 1400V PWS-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 38A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
• Current - Reverse Leakage @ Vr: 40µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-A
• Supplier Device Package: PWS-A

pacote: PWS-A

VBO22-14NO8

IXYS

RECT BRIDGE 21A 1400V FO-B

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 21A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-B
• Supplier Device Package: FO-B

pacote: 4-Square, FO-B

IXD611S1

IXYS

IC DRVR HALF BRIDGE 600MA 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 35 V
• Logic Voltage - VIL, VIH: 2.4V, 2.7V
• Current - Peak Output (Source, Sink): 600mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 28ns, 18ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

IXGM20N60

IXYS

IGBT 600V 40A TO-204AE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 150 W
• Switching Energy: 2mJ (on), 3.2mJ (off)
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 100ns/600ns
• Test Condition: 480V, 20A, 82Ohm, 15V
• Reverse Recovery Time (trr): 200 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AE
• Supplier Device Package: TO-204AE

pacote: -

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DGS10-018AS-TUB

IXYS

DIODE SCHOTTKY 180V 15A TO263AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 180 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.3 mA @ 180 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

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IXTP80N12T2

IXYS

MOSFET N-CH 120V 80A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 325W (Tc)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacote: -

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N3790TJ240

IXYS

SCR 2.4KV 7410A W81

• Voltage - Off State: 2.4 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 2.1 V
• Current - On State (It (AV)) (Max): 3790 A
• Current - On State (It (RMS)) (Max): 7410 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: W81

pacote: -

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N1140LN140

IXYS

SCR 1.4KV 2565A W92

• Voltage - Off State: 1.4 kV
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Voltage - On State (Vtm) (Max): 1.87 V
• Current - On State (It (AV)) (Max): 1315 A
• Current - On State (It (RMS)) (Max): 2565 A
• Current - Hold (Ih) (Max): 300 mA
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 19500A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -60°C ~ 130°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: W92

pacote: -

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IXTK3N250L

IXYS

MOSFET N-CH 2500V 3A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2500 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

pacote: -

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IXFA3N120-TRR

IXYS

MOSFET N-CH 1200V 3A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

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IXFT150N17T2

IXYS

MOSFET N-CH 175V 150A TO268HV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 175 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 880W (Tc)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268HV (IXFT)
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

pacote: -

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IXTC110N055T

IXYS

MOSFET N-CH ISOPLUS220

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacote: -

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