IXYS Produtos

IXGH38N60U1

IXYS

IGBT 600V 76A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 76A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 38A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

pacote: TO-247-3

IXGH17N100

IXYS

IGBT 1000V 34A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
• Power - Max: 150W
• Switching Energy: 3mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 100ns/500ns
• Test Condition: 800V, 17A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

pacote: TO-247-3

IXYH82N120C3

IXYS

IGBT 1200V 200A 1250W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 380A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
• Power - Max: 1250W
• Switching Energy: 4.95mJ (on), 2.78mJ (off)
• Input Type: Standard
• Gate Charge: 215nC
• Td (on/off) @ 25°C: 29ns/192ns
• Test Condition: 600V, 80A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

pacote: TO-247-3

IXFN80N48

IXYS

MOSFET N-CH 480V 80A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 480V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

IXTN120N25

IXYS

MOSFET N-CH 250V 120A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

IXFH80N20Q

IXYS

MOSFET N-CH 200V 80A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacote: TO-247-3

IXFH12N90

IXYS

MOSFET N-CH 900V 12A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacote: TO-247-3

IXTH360N055T2

IXYS

MOSFET N-CH 55V 360A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 935W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacote: TO-247-3

IXTA2N100

IXYS

MOSFET N-CH 1000V 2A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXKP13N60C5

IXYS

MOSFET N-CH 600V 13A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacote: TO-220-3

IXTA14N60P

IXYS

MOSFET N-CH 600V 14A D2-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTP2N80P

IXYS

MOSFET N-CH 800V 2A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacote: TO-220-3

IXFB120N50P2

IXYS

MOSFET N-CH 500V 120A PLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1890W (Tc)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS264?
• Package / Case: TO-264-3, TO-264AA

pacote: TO-264-3, TO-264AA

VMK90-02T2

IXYS

MOSFET 2N-CH 200V 83A TO-240AA

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 83A
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
• Power - Max: 380W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA
• Supplier Device Package: TO-240AA

pacote: TO-240AA

VYK70-16IO7

IXYS

MOD THYRISTOR 3PH 3X28A 1600V

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 3 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 28A
• Current - On State (It (RMS)) (Max): 43A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

pacote: Module

VVZ24-16IO1

IXYS

RECT BRIDGE 3PH 27A 1600V KAMM

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number of SCRs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 21A
• Current - On State (It (RMS)) (Max): 16A
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 320A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: KAMM

pacote: KAMM

MCO600-22IO1

IXYS

MOD THYRISTOR SGL 2200V Y1-CU

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2200V
• Current - On State (It (AV)) (Max): 600A
• Current - On State (It (RMS)) (Max): 928A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 16000A
• Current - Hold (Ih) (Max): 300mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

pacote: Y1-CU

DSEP30-03A

IXYS

DIODE GEN PURP 300V 30A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 250µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-247-2

DNA30E2200PC

IXYS

DIODE GEN PURP 2.2KV 30A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 2200V
• Capacitance @ Vr, F: 7pF @ 700V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MDO500-22N1

IXYS

DIODE MODULE 2.2KV 560A Y1-CU

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io): 560A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30mA @ 2200V
• Capacitance @ Vr, F: 576pF @ 700V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU
• Operating Temperature - Junction: -

pacote: Y1-CU

DSI30-12AS

IXYS

DIODE GEN PURP 1.2KV 30A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Capacitance @ Vr, F: 10pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -40°C ~ 175°C

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DSS2X111-008A

IXYS

DIODE MODULE 80V 110A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 110A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8mA @ 80V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

pacote: SOT-227-4, miniBLOC

DSSK80-006BR

IXYS

DIODE ARRAY SCHOTTKY 60V 40A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

pacote: ISOPLUS247?

IXBOD2-10

IXYS

BREAKOVER DIODE

• Voltage - Breakover: -
• Voltage - Off State: -
• Voltage - On State: -
• Current - Peak Pulse (8/20µs): -
• Current - Peak Pulse (10/1000µs): -
• Current - Hold (Ih): 20mA
• Number of Elements: 1
• Capacitance: -
• Mounting Type: Through Hole
• Package / Case: Radial

pacote: Radial

MCNA55P2200TA

IXYS

BIPOLAR MODULE - THYRISTOR TO-2

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 55 A
• Current - On State (It (RMS)) (Max): 86 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 95 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

pacote: -

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DLA5P800UC-TRL

IXYS

DIODE ARRAY GP 800V 5A TO252AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

pacote: -

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MTI200WX75GD-SMD

IXYS

MOSFET 6N-CH 75V 255A ISOPLUS

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
• Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 275µA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: ISOPLUS-DIL™
• Supplier Device Package: ISOPLUS-DIL™

pacote: -

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IXTH1N250

IXYS

MOSFET N-CH 2500V 1.5A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2500 V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD
• Package / Case: TO-247-3

pacote: -

DHG60U1200LB-TUB

IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.2 kV
• Current - Average Rectified (Io): 60 A
• Voltage - Forward (Vf) (Max) @ If: 2.92 V @ 60 A
• Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-PowerSMD
• Supplier Device Package: 9-SMPD-B

pacote: -

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N2543ZD300

IXYS

SCR 3KV W46

• Voltage - Off State: 3 kV
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): 2543 A
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: W46

pacote: -

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