IXYS Produtos

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
• Power - Max: 660W
• Switching Energy: 2.4mJ (on), 5.5mJ (off)
• Input Type: Standard
• Gate Charge: 350nC
• Td (on/off) @ 25°C: 60ns/200ns
• Test Condition: 480V, 100A, 2.4 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

pacote: TO-247-3

IXSH10N60B2D1

IXYS

IGBT 600V 20A 100W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: 430µJ (off)
• Input Type: Standard
• Gate Charge: 17nC
• Td (on/off) @ 25°C: 30ns/180ns
• Test Condition: 480V, 10A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

pacote: TO-247-3

IXGX50N120C3H1

IXYS

IGBT 1200V 95A 460W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 95A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
• Power - Max: 460W
• Switching Energy: 2mJ (on), 630µJ (off)
• Input Type: Standard
• Gate Charge: 196nC
• Td (on/off) @ 25°C: 31ns/123ns
• Test Condition: 600V, 40A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 75ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

pacote: TO-247-3

IXGX40N120BD1

IXYS

IGBT 1200V PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

pacote: ISOPLUS247?

MMIX1F44N100Q3

IXYS

MOSFET N-CH 1000V 30A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 245 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 24-SMPD
• Package / Case: 24-PowerSMD, 21 Leads

pacote: 24-PowerSMD, 21 Leads

IXFR75N10Q

IXYS

MOSFET N-CH 100V ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

pacote: ISOPLUS247?

IXTT36N50P

IXYS

MOSFET N-CH 500V 36A TO-268 D3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 540W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT30N50P

IXYS

MOSFET N-CH 500V 30A TO-268 D3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTQ54N30T

IXYS

MOSFET N-CH 300V 54A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

pacote: TO-3P-3, SC-65-3

IXTA50N20P

IXYS

MOSFET N-CH 200V 50A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFK24N100Q3

IXYS

MOSFET N-CH 1000V 24A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1000W (Tc)
• Rds On (Max) @ Id, Vgs: 440 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacote: TO-264-3, TO-264AA

IXFN100N50P

IXYS

MOSFET N-CH 500V 90A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

IXTA8N50P

IXYS

MOSFET N-CH 500V 8A D2-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXKN75N60C

IXYS

MOSFET N-CH 600V 75A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 75A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 50A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

IXTN600N04T2

IXYS

MOSFET N-CH 40V 600A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 600A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 940W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

IXFK44N80P

IXYS

MOSFET N-CH 800V 44A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacote: TO-264-3, TO-264AA

MCC310-18IO1

IXYS

THYRISTOR DIODE MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 320A
• Current - On State (It (RMS)) (Max): 500A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

pacote: Module

VWO35-12HO7

IXYS

MODULE AC CTLR 1200V ECO-PAC1

• Structure: 3-Phase Controller - All SCRs
• Number of SCRs, Diodes: 6 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 16A
• Current - On State (It (RMS)) (Max): 35A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A
• Current - Hold (Ih) (Max): 50mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

pacote: Module

DHG20I600PA

IXYS

DIODE GEN PURP 600V 20A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 2.32V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: TO-220-2

MDD255-18N1

IXYS

DIODE MODULE 1.8KV 270A Y1-CU

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io) (per Diode): 270A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30mA @ 1800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU

pacote: Y1-CU

VUO22-12NO1

IXYS

RECT BRIDGE 3PH 25A 1200V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.19V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1-A

pacote: V1-A

FBO40-12N

IXYS

DIODE BRIDGE 1PHASE I4-PAC-5

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.17V @ 20A
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

pacote: i4-Pac?-5

IXTA110N055T2-TRL

IXYS

MOSFET N-CH 55V 110A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

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IXYH50N170C

IXYS

IGBT 1700V 178A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 178 A
• Current - Collector Pulsed (Icm): 460 A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Power - Max: 1500 W
• Switching Energy: 8.7mJ (on), 5.6mJ (off)
• Input Type: Standard
• Gate Charge: 260 nC
• Td (on/off) @ 25°C: 20ns/180ns
• Test Condition: 850V, 50A, 1Ohm, 15V
• Reverse Recovery Time (trr): 44 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

pacote: -

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N2154JK020

IXYS

SCR 200V 4190A WP1

• Voltage - Off State: 200 V
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.58 V
• Current - On State (It (AV)) (Max): 2154 A
• Current - On State (It (RMS)) (Max): 4190 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 140°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: WP1

pacote: -

Request a Quote

MDNA425P2200PT-PC

IXYS

MDNA425P2200PTSF-PC

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

pacote: -

Request a Quote

IXTA06N120P-TRL

IXYS

MOSFET N-CH 1200V 600MA TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

MIXA60WH1200TEH

IXYS

IGBT MODULE 1200V 85A 290W E3

• IGBT Type: -
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 85 A
• Power - Max: 290 W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: -
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

pacote: -

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