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GeneSiC Semiconductor |
TRANS SJT 1200V 45A
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 282W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A
- Operating Temperature: 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque7.776 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 240A D67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 240A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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pacote: D-67 |
Estoque3.312 |
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GeneSiC Semiconductor |
DIODE MODULE 20V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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pacote: D-67 |
Estoque3.840 |
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GeneSiC Semiconductor |
DIODE GP 1.8KV 165A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 165A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 22mA @ 1800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -55°C ~ 150°C
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pacote: DO-205AB, DO-9, Stud |
Estoque5.152 |
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GeneSiC Semiconductor |
DIODE GEN REV 800V 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5.5mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -60°C ~ 200°C
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pacote: DO-205AA, DO-8, Stud |
Estoque4.528 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 75A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 75A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -55°C ~ 150°C
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pacote: DO-203AB, DO-5, Stud |
Estoque4.608 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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pacote: DO-203AB, DO-5, Stud |
Estoque4.176 |
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GeneSiC Semiconductor |
DIODE GEN PURP 50V 15A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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pacote: DO-203AB, DO-5, Stud |
Estoque4.208 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -40°C ~ 180°C
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pacote: DO-203AA, DO-4, Stud |
Estoque7.504 |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -40°C ~ 180°C
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pacote: DO-203AA, DO-4, Stud |
Estoque5.280 |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 6A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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pacote: DO-203AA, DO-4, Stud |
Estoque4.240 |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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pacote: DO-203AA, DO-4, Stud |
Estoque4.112 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 5µA @ 650V
- Capacitance @ Vr, F: 274pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-257-3
- Supplier Device Package: TO-257
- Operating Temperature - Junction: -55°C ~ 250°C
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pacote: TO-257-3 |
Estoque5.232 |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 150A TO244
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 110ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244
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pacote: TO-244AB |
Estoque6.320 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 60V 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 400A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque2.864 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 300A 3TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque2.656 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 200A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque2.016 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 300A 2 TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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pacote: Twin Tower |
Estoque3.856 |
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GeneSiC Semiconductor |
DIODE MODULE 45V 300A 2TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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pacote: Twin Tower |
Estoque2.192 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 300A 2 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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pacote: Twin Tower |
Estoque3.552 |
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GeneSiC Semiconductor |
DIODE MODULE 200V 600A 3TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 600A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque6.336 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 250A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 250A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque3.488 |
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GeneSiC Semiconductor |
DIODE MODULE 20V 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 100°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque5.760 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 200A 3 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque2.768 |
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GeneSiC Semiconductor |
DIODE MODULE 1.2KV 200A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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pacote: Three Tower |
Estoque2.352 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 100A 2 TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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pacote: Twin Tower |
Estoque7.072 |
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GeneSiC Semiconductor |
DIODE MODULE 60V 200A 2TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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pacote: Twin Tower |
Estoque4.672 |
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 2TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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pacote: Twin Tower |
Estoque7.120 |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 10A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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pacote: 4-SIP, KBU |
Estoque5.360 |
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GeneSiC Semiconductor |
650V 12A PQFN 8X8 SIC SCHOTTKY M
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 650V
- Current - Max: 12 A
- Capacitance @ Vr, F: -
- Resistance @ If, F: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Package / Case: 4-PowerVSFN
- Supplier Device Package: QFN8x8
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pacote: - |
Request a Quote |
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