Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
SIC MOSFET N-CH 42A TO263-7
|
pacote: - |
Estoque12 |
|
SiCFET (Silicon Carbide) | 1200 V | 42A (Tc) | 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | 1560 pF @ 800 V | ±15V | - | 224W (Tc) | 90mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 41A TO247-4
|
pacote: - |
Estoque2.592 |
|
SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | 1560 pF @ 800 V | +22V, -10V | - | 207W (Tc) | 90mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 41A TO247-3
|
pacote: - |
Estoque7.947 |
|
SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | 1560 pF @ 800 V | +22V, -10V | - | 207W (Tc) | 90mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
1700V 1000M TO-263-7 G2R SIC MOS
|
pacote: - |
Estoque2.370 |
|
SiC (Silicon Carbide Junction Transistor) | 1700 V | 5A (Tc) | 20V | 4V @ 2mA | 11 nC @ 20 V | 139 pF @ 1000 V | +20V, -5V | - | 44W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO263-7
|
pacote: - |
Estoque11.241 |
|
SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 2.69V @ 2mA | 12 nC @ 15 V | 334 pF @ 800 V | ±15V | - | 75W (Tc) | 420mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO247-3
|
pacote: - |
Estoque16.794 |
|
SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 2.69V @ 2mA | 12 nC @ 15 V | 334 pF @ 800 V | ±15V | - | 74W (Tc) | 420mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 9A TO247-3
|
pacote: - |
Estoque4.722 |
|
SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 2.7V @ 2mA | 18 nC @ 15 V | 454 pF @ 1000 V | ±15V | - | 88W (Tc) | 585mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 9A TO263-7
|
pacote: - |
Estoque19.407 |
|
SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 2.7V @ 2mA | 18 nC @ 15 V | 454 pF @ 1000 V | ±15V | - | 91W (Tc) | 585mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
1700V 450M TO-263-7 G3R SIC MOSF
|
pacote: - |
Estoque1.530 |
|
SiCFET (Silicon Carbide) | 1700 V | 8A (Tc) | 15V | 2.7V @ 2mA | 18 nC @ 15 V | 454 pF @ 1000 V | +15V, -5V | - | 71W (Tc) | 585mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH TO263-7
|
pacote: - |
Estoque1.929 |
|
SiCFET (Silicon Carbide) | 3300 V | 35A | 20V | - | 145 nC @ 20 V | 3706 pF @ 1000 V | +25V, -10V | - | - | 156mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 71A TO247-3
|
pacote: - |
Estoque3.108 |
|
SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 2.69V @ 10mA | 106 nC @ 15 V | 2929 pF @ 800 V | ±15V | - | 333W (Tc) | 48mOhm @ 35A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 71A TO247-4
|
pacote: - |
Estoque2.850 |
|
SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 2.69V @ 10mA | 106 nC @ 15 V | 2929 pF @ 800 V | ±15V | - | 333W (Tc) | 48mOhm @ 35A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 75A TO263-7
|
pacote: - |
Estoque4.401 |
|
SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 2.7V @ 18mA (Typ) | 106 nC @ 15 V | 2929 pF @ 800 V | ±15V | - | 374W (Tc) | 48mOhm @ 35A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 22A TO247-3
|
pacote: - |
Estoque7.542 |
|
SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 2.69V @ 5mA | 28 nC @ 15 V | 730 pF @ 800 V | ±15V | - | 123W (Tc) | 192mOhm @ 10A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 19A TO263-7
|
pacote: - |
Estoque3.180 |
|
SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V | 2.7V @ 5mA (Typ) | 23 nC @ 15 V | 724 pF @ 800 V | +20V, -10V | - | 128W (Tc) | 208mOhm @ 10A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 21A TO247-3
|
pacote: - |
Estoque2.616 |
|
SiCFET (Silicon Carbide) | 1700 V | 21A (Tc) | 15V | 2.7V @ 5mA | 51 nC @ 15 V | 1272 pF @ 1000 V | ±15V | - | 175W (Tc) | 208mOhm @ 12A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 18A TO263-7
|
pacote: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1700 V | 18A (Tc) | 15V | 2.7V @ 5mA | 29 nC @ 15 V | 854 pF @ 1000 V | ±15V | - | 187W (Tc) | 208mOhm @ 12A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
3300V 120M TO-263-7 G2R SIC MOSF
|
pacote: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 3300 V | 33A (Tc) | 20V | 3.5V @ 4mA | 130 nC @ 20 V | 3009 pF @ 1000 V | +20V, -5V | - | 366W (Tc) | 156mOhm @ 15A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
3300V 50M TO-247-4 SIC MOSFET
|
pacote: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 3300 V | 63A (Tc) | 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | 7301 pF @ 1000 V | +25V, -10V | - | 536W (Tc) | 50mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
GeneSiC Semiconductor |
1200V 75M TO-263-7 G3R SIC MOSFE
|
pacote: - |
Estoque17.904 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A (Tc) | 15V, 18V | 2.7V @ 10mA | 47 nC @ 15 V | 1545 pF @ 800 V | +22V, -10V | - | 196W (Tc) | 85mOhm @ 20A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
1200V 30M TO-263-7 G3R SIC MOSFE
|
pacote: - |
Estoque4.659 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 85A (Tc) | 15V, 18V | 2.7V @ 24mA | 118 nC @ 15 V | 3863 pF @ 800 V | +22V, -10V | - | 408W (Tc) | 34mOhm @ 45A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 61A TO247-3
|
pacote: - |
Estoque3.045 |
|
SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 2.7V @ 8mA | 182 nC @ 15 V | 4523 pF @ 1000 V | ±15V | - | 438W (Tc) | 58mOhm @ 40A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 61A TO247-4
|
pacote: - |
Estoque2.130 |
|
SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 2.7V @ 8mA | 182 nC @ 15 V | 4523 pF @ 1000 V | ±15V | - | 438W (Tc) | 58mOhm @ 40A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
GeneSiC Semiconductor |
750V 60M TO-247-4 G3R SIC MOSFET
|
pacote: - |
Estoque5.775 |
|
SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | Through Hole | TO-247-4 | TO-247-4 |
||
GeneSiC Semiconductor |
750V 60M TO-263-7 G3R SIC MOSFET
|
pacote: - |
Estoque3.918 |
|
SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
750V 60M TO-247-3 G3R SIC MOSFET
|
pacote: - |
Estoque8.604 |
|
SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
3300V 1000M TO-263-7 G2R SIC MOS
|
pacote: - |
Estoque2.325 |
|
SiC (Silicon Carbide Junction Transistor) | 3300 V | 5A (Tc) | 20V | 3.5V @ 2mA | 21 nC @ 20 V | 238 pF @ 1000 V | +20V, -5V | - | 74W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 3A TO263-7
|
pacote: - |
Estoque39.993 |
|
SiCFET (Silicon Carbide) | 1700 V | 3A (Tc) | 20V | 4V @ 2mA | - | 139 pF @ 1000 V | +20V, -10V | - | 54W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO247-3
|
pacote: - |
Estoque12.009 |
|
SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 5.5V @ 500µA | 11 nC @ 20 V | 111 pF @ 1000 V | +25V, -10V | - | 44W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO263-7
|
pacote: - |
Estoque11.016 |
|
SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 3.5V @ 2mA | 21 nC @ 20 V | 238 pF @ 1000 V | +20V, -5V | - | 74W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |