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GeneSiC Semiconductor Produtos - Diodos - Retificadores de Ponte

Registros 345
Página  3/12
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DB153G
GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque7.152
Standard
200V
1.5A
1.1V @ 1.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB152G
GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque2.464
Standard
100V
1.5A
1.1V @ 1.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB151G
GeneSiC Semiconductor

DIODE BRIDGE 50V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque3.344
Standard
50V
1.5A
1.1V @ 1.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot W005M
GeneSiC Semiconductor

DIODE BRIDGE 50V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque7.824
Standard
50V
1.5A
1V @ 1A
10µA @ 50V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot DB107G
GeneSiC Semiconductor

DIODE BRIDGE 1000V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque14.688
Standard
1000V
1A
1.1V @ 1A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB106G
GeneSiC Semiconductor

DIODE BRIDGE 800V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque4.704
Standard
800V
1A
1.1V @ 1A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB105G
GeneSiC Semiconductor

DIODE BRIDGE 600V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque194.304
Standard
600V
1A
1.1V @ 1A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB104G
GeneSiC Semiconductor

DIODE BRIDGE 400V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque56.748
Standard
400V
1A
1.1V @ 1A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB102G
GeneSiC Semiconductor

DIODE BRIDGE 100V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque228.000
Standard
100V
1A
1.1V @ 1A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB101G
GeneSiC Semiconductor

DIODE BRIDGE 50V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque7.032
Standard
50V
1A
1.1V @ 1A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot W08M
GeneSiC Semiconductor

DIODE BRIDGE 800V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque120.072
Standard
800V
1.5A
1V @ 1A
5µA @ 800V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot W06M
GeneSiC Semiconductor

DIODE BRIDGE 600V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque15.888
Standard
600V
1.5A
1V @ 1A
10µA @ 600V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot W04M
GeneSiC Semiconductor

DIODE BRIDGE 400V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque41.748
Standard
400V
1.5A
1V @ 1A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
KBU8A
GeneSiC Semiconductor

DIODE BRIDGE 50V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: 4-SIP, KBU
Estoque10.020
Standard
50V
8A
1V @ 8A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot KBU8J
GeneSiC Semiconductor

DIODE BRIDGE 600V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: 4-SIP, KBU
Estoque3.696
Standard
600V
8A
1V @ 8A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot W10M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque404.940
Standard
1000V
1.5A
1V @ 1A
10µA @ 1000V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot GBU8J
GeneSiC Semiconductor

DIODE BRIDGE 600V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque9.516
Standard
600V
8A
1.1V @ 8A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU8D
GeneSiC Semiconductor

DIODE BRIDGE 200V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque12.804
Standard
200V
8A
1.1V @ 8A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8G
GeneSiC Semiconductor

DIODE BRIDGE 400V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque23.568
Standard
400V
8A
1.1V @ 8A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU8B
GeneSiC Semiconductor

DIODE BRIDGE 100V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque4.784
Standard
100V
8A
1.1V @ 8A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU6J
GeneSiC Semiconductor

DIODE BRIDGE 600V 6A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque8.460
Standard
600V
6A
1.1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6B
GeneSiC Semiconductor

DIODE BRIDGE 100V 6A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque22.404
Standard
100V
6A
1.1V @ 6A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU6B
GeneSiC Semiconductor

DIODE BRIDGE 100V 6A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: 4-SIP, KBU
Estoque15.996
Standard
100V
6A
1V @ 6A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBU6M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 6A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: 4-SIP, KBU
Estoque16.944
Standard
1000V
6A
1V @ 6A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot GBU4G
GeneSiC Semiconductor

DIODE BRIDGE 400V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque26.616
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4B
GeneSiC Semiconductor

DIODE BRIDGE 100V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque17.016
Standard
100V
4A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU10D
GeneSiC Semiconductor

DIODE BRIDGE 200V 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque21.624
Standard
200V
10A
1.1V @ 10A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBL005
GeneSiC Semiconductor

DIODE BRIDGE 50V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
pacote: 4-SIP, GBL
Estoque19.284
Standard
50V
4A
1.1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot GBU4A
GeneSiC Semiconductor

DIODE BRIDGE 50V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque9.984
Standard
50V
4A
1.1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot DB103G
GeneSiC Semiconductor

DIODE BRIDGE 200V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque59.328
Standard
200V
1A
1.1V @ 1A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB