Fale conosco
SalesDept@heisener.com +86-755-83210559 ext. 811

Transistores - Unijunction Programável

Registros 14
Página 1/1
Imagem
Nº de peças
Fabricante
Descrição
pacote
Em estoque
Quantidade
Power Dissipation (Max)
Voltage - Output
Voltage - Offset (Vt)
Current - Gate to Anode Leakage (Igao)
Current - Valley (Iv)
Current - Peak
Package / Case
hot2N6028RLRPG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque317
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRMG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque284
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027RL1G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque4.400
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRP
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque473
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6028G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Em estoque581
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA)
2N6027RL1
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque320
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027G
ON Semiconductor

TRANS PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Em estoque38.320
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA)
2N6028RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque365
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque3.476
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque215
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque10.000
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6028
Central Semiconductor Corp

PROGRAMMABLE UJT 40V TO226-3

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 6V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Em estoque1.010.020
300mW
6V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA)
hot2N6027
Central Semiconductor Corp

PROGRAMMABLE UJT 40V TO226-3

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 6V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Em estoque1.116.024
300mW
6V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA)
CMPP6028 TR
Central Semiconductor Corp

PROGRAMMABLE UJT SOT-23

  • Voltage: 40V
  • Power Dissipation (Max): 167mW
  • Voltage - Output: 6V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Em estoque8.641
167mW
6V
600mV
10nA
25µA
150nA
TO-236-3, SC-59, SOT-23-3