Página 992 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  992/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI08CNE8N G
Infineon Technologies

MOSFET N-CH 85V 95A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque3.808
MOSFET (Metal Oxide)
85V
95A (Tc)
10V
4V @ 130µA
99nC @ 10V
6690pF @ 40V
±20V
-
167W (Tc)
6.4 mOhm @ 95A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
2SK3670(T6CANO,A,F
Toshiba Semiconductor and Storage

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body
pacote: TO-226-3, TO-92-3 Long Body
Estoque3.056
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
hot SI4858DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque30.000
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
1V @ 250µA (Min)
40nC @ 4.5V
-
±20V
-
1.6W (Ta)
5.25 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
2N7002_NB9G002
Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque2.752
MOSFET (Metal Oxide)
60V
115mA (Ta)
5V, 10V
2.5V @ 250µA
-
50pF @ 25V
±20V
-
200mW (Ta)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23 (TO-236AB)
TO-236-3, SC-59, SOT-23-3
hot FDR838P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8A SSOT-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-8
  • Package / Case: 8-SMD, Gull Wing
pacote: 8-SMD, Gull Wing
Estoque1.403.268
MOSFET (Metal Oxide)
20V
8A (Ta)
2.5V, 4.5V
1.5V @ 250µA
45nC @ 4.5V
3300pF @ 10V
±8V
-
1.8W (Ta)
17 mOhm @ 8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-8
8-SMD, Gull Wing
hot NTP4302
ON Semiconductor

MOSFET N-CH 30V 74A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque6.576
MOSFET (Metal Oxide)
30V
74A (Tc)
4.5V, 10V
3V @ 250µA
28nC @ 4.5V
2400pF @ 24V
±20V
-
80W (Tc)
9.3 mOhm @ 37A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STP200N6F3
STMicroelectronics

MOSFET N-CH 60V 120A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque6.544
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 250µA
100nC @ 10V
6800pF @ 25V
±20V
-
330W (Tc)
3.9 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPA65R190E6XKSA1
Infineon Technologies

MOSFET N-CH 650V 20.2A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque6.080
MOSFET (Metal Oxide)
650V
20.2A (Tc)
10V
3.5V @ 730µA
73nC @ 10V
1620pF @ 100V
±20V
-
34W (Tc)
190 mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
NVMFS5C604NLT3G
ON Semiconductor

MOSFET N-CH 60V 40A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacote: 8-PowerTDFN
Estoque5.440
MOSFET (Metal Oxide)
60V
40A (Ta), 287A (Tc)
4.5V, 10V
2V @ 250µA
120nC @ 10V
8900pF @ 25V
±20V
-
3.9W (Ta), 200W (Tc)
1.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
AOT270AL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 21.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10830pF @ 37.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.416
MOSFET (Metal Oxide)
75V
21.5A (Ta), 140A (Tc)
6V, 10V
3.3V @ 250µA
206nC @ 10V
10830pF @ 37.5V
±20V
-
2.1W (Ta), 500W (Tc)
2.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
SUG90090E-GE3
Vishay Siliconix

MOSFET N-CH 200V 100A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 395W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque4.224
MOSFET (Metal Oxide)
200V
100A (Tc)
7.5V, 10V
4V @ 250µA
129nC @ 10V
5220pF @ 100V
±20V
-
395W (Tc)
9.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
SQ9407EY-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 4.6A 8SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque2.432
MOSFET (Metal Oxide)
60V
4.6A (Tc)
4.5V, 10V
2.5V @ 250µA
40nC @ 10V
1140pF @ 30V
±20V
-
3.75W (Tc)
85 mOhm @ 3.5A, 10V
-55°C ~ 175°C (TA)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AOK42S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 39A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2154pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque19.308
MOSFET (Metal Oxide)
600V
39A (Tc)
10V
3.8V @ 250µA
40nC @ 10V
2154pF @ 100V
±30V
-
417W (Tc)
99 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot AOD444
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 12A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque456.036
MOSFET (Metal Oxide)
60V
4A (Ta), 12A (Tc)
4.5V, 10V
3V @ 250µA
10nC @ 10V
540pF @ 30V
±20V
-
2.1W (Ta), 20W (Tc)
60 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
NTE2372
NTE Electronics, Inc

MOSFET P-CHANNEL 200V 3.5A TO220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
200 V
3.5A (Tc)
10V
4V @ 250µA
22 nC @ 10 V
350 pF @ 25 V
±20V
-
40W (Tc)
1.5Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
64-2143PBF
Infineon Technologies

MOSFET N-CH 100V 17A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDMS0355S
Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
18A (Ta), 22A (Tc)
4.5V, 10V
3V @ 1mA
31 nC @ 10 V
1815 pF @ 15 V
±20V
-
2.5W (Ta), 36W (Tc)
5mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
IAUC120N06S5L011ATMA1
Infineon Technologies

MOSFET_)40V 60V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-53
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque14.628
MOSFET (Metal Oxide)
60 V
310A (Tj)
4.5V, 10V
2.2V @ 130µA
160 nC @ 10 V
11400 pF @ 30 V
±20V
-
188W (Tc)
1.1mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
MCU20N06A-TP
Micro Commercial Co

MOSFET N-CH 60V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque66.600
MOSFET (Metal Oxide)
60 V
20A (Tj)
10V
3V @ 250µA
12 nC @ 10 V
500 pF @ 30 V
±20V
-
-
45mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA040N08NM5SXKSA1
Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 109µA
  • Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque1.470
MOSFET (Metal Oxide)
80 V
75A (Tc)
6V, 10V
3.8V @ 109µA
93 nC @ 10 V
6400 pF @ 40 V
±20V
-
39W (Tc)
4mOhm @ 38A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
UJ4C075023K3S
Qorvo

750V/23MOHM, SIC, CASCODE, G4, T

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: -
Estoque3.093
SiCFET (Cascode SiCJFET)
750 V
66A (Tc)
12V
6V @ 10mA
37.8 nC @ 15 V
1400 pF @ 400 V
±20V
-
306W (Tc)
29mOhm @ 40A, 12V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247-3
PJD55P03E-AU_L2_006A1
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
12.4A (Ta), 48A (Tc)
4.5V, 10V
2.5V @ 250µA
34 nC @ 10 V
1610 pF @ 25 V
±25V
-
3W (Ta), 44W (Tc)
12.1mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
STB8N50ET4
onsemi

NFET D2PAK SPCL 500V TR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FBG04N30BSH
EPC Space, LLC

GAN FET HEMT 40V 30A 4FSMD-B

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-SMD
  • Package / Case: 4-SMD, No Lead
pacote: -
Estoque60
GaNFET (Gallium Nitride)
40 V
30A (Tc)
5V
2.5V @ 9mA
11.4 nC @ 5 V
1300 pF @ 20 V
+6V, -4V
-
-
9mOhm @ 30A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
DMP4065SQ-7
Diodes Incorporated

MOSFET P-CH 40V 2.4A SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque26.982
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
3V @ 250µA
12.2 nC @ 10 V
587 pF @ 20 V
±20V
-
720mW (Ta)
80mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SISS22DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 25A/90.6A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacote: -
Estoque17.991
MOSFET (Metal Oxide)
60 V
25A (Ta), 90.6A (Tc)
7.5V, 10V
3.6V @ 250µA
44 nC @ 10 V
1870 pF @ 30 V
±20V
-
5W (Ta), 65.7W (Tc)
4mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
EPC2212
EPC

GANFET N-CH 100V 18A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacote: -
Estoque470.526
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
2.5V @ 3mA
4 nC @ 5 V
407 pF @ 50 V
+6V, -4V
-
-
13.5mOhm @ 11A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
BUK7M6R0-40HX
Nexperia USA Inc.

MOSFET N-CH 40V 50A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 25 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Ta)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
pacote: -
Estoque3.969
MOSFET (Metal Oxide)
40 V
50A (Ta)
10V
3.6V @ 1mA
28 nC @ 10 V
1875 pF @ 25 V
+20V, -10V
-
70W (Ta)
6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)