Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 61A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.984 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | ±16V | - | 120W (Tc) | 14 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.264 |
|
MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19pF @ 25V | ±20V | - | 360mW (Ta) | 8 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 60V 8.8A TO-220AB
|
pacote: TO-220-3 |
Estoque4.816 |
|
MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 420pF @ 25V | ±20V | - | 42W (Tc) | 300 mOhm @ 6.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH TO-252
|
pacote: - |
Estoque4.560 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque984.528 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2V @ 250µA | 30nC @ 10V | 1600pF @ 15V | ±20V | Schottky Diode (Body) | 3.1W (Ta) | 11 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 16V 12A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque4.512 |
|
MOSFET (Metal Oxide) | 16V | 12A (Ta), 76A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 21nC @ 4.5V | 1660pF @ 12V | ±16V | - | 1.3W (Ta), 52W (Tc) | 5.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.256 |
|
MOSFET (Metal Oxide) | 60V | 75A (Ta) | 5V | 2V @ 250µA | 92nC @ 5V | 4370pF @ 25V | ±20V | - | 2.4W (Ta), 214W (Tj) | 11 mOhm @ 37.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 45A TO220AB
|
pacote: TO-220-3 |
Estoque450.180 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 10V | 4V @ 250µA | 46nC @ 10V | 1725pF @ 25V | ±20V | - | 2.4W (Ta), 125W (Tj) | 26 mOhm @ 22.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 89A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.056 |
|
MOSFET (Metal Oxide) | 30V | 89A (Ta) | 4.5V, 10V | 2V @ 250µA (Min) | 50nC @ 5V | - | ±20V | - | - | 7 mOhm @ 15A, 10V | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220AB
|
pacote: TO-220-3 |
Estoque433.476 |
|
MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | ±20V | - | 74W (Tc) | 450 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 320A D2PAK-7
|
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Estoque4.912 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 6930pF @ 25V | ±20V | - | 330W (Tc) | 1.6 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 25V 36A DIRECTFET-MX
|
pacote: DirectFET? Isometric MX |
Estoque4.048 |
|
MOSFET (Metal Oxide) | 25V | 36A (Ta), 210A (Tc) | 4.5V, 10V | 2.35V @ 150µA | 68nC @ 4.5V | 5790pF @ 13V | ±20V | - | 2.8W (Ta), 89W (Tc) | 1.4 mOhm @ 38A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque13.308 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | ±20V | - | 200W (Tc) | 23 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET P-CH 200V 90A ISOPLUS247
|
pacote: TO-247-3 |
Estoque2.192 |
|
MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 4.5V @ 250µA | 740nC @ 10V | 73000pF @ 25V | ±15V | - | 595W (Tc) | 32 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
||
IXYS |
MOSFET N-CH 600V 3A D-PAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.440 |
|
MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 5.5V @ 50µA | 9.8nC @ 10V | 411pF @ 25V | ±30V | - | 70W (Tc) | 2.9 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 100V SO8FL
|
pacote: 8-PowerTDFN, 5 Leads |
Estoque3.648 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Ta), 19A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 7.9nC @ 10V | 480pF @ 25V | ±16V | - | 3.5W (Ta), 42W (Tc) | 46 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 400V 2A TO-220
|
pacote: TO-220-3 |
Estoque16.236 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 350pF @ 25V | ±30V | - | 63W (Tc) | 6.5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 1000V 35A TO264
|
pacote: TO-264-3, TO-264AA |
Estoque5.632 |
|
MOSFET (Metal Oxide) | 1000V | 35A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | ±30V | - | 1135W (Tc) | 400 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Nexperia USA Inc. |
PMCM4401UPE/NONE/REEL 7" Q1/T1
|
pacote: 4-XFBGA, WLCSP |
Estoque6.000 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | 420pF @ 10V | ±8V | - | 400mW (Ta), 12.5W (Tc) | 95 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (0.78x0.78) | 4-XFBGA, WLCSP |
||
Vishay Siliconix |
MOSFET P-CH 30V 75A TO220AB
|
pacote: TO-220-3 |
Estoque8.820 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 240nC @ 10V | 9000pF @ 25V | ±20V | - | 3.75W (Ta), 187W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 8.8A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque539.124 |
|
MOSFET (Metal Oxide) | 100V | 8.8A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34.8nC @ 10V | 1055pF @ 50V | ±20V | - | 2.5W (Ta), 32.1W (Tc) | 195 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
pacote: - |
Estoque2.727 |
|
SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | 5.7V @ 6mA | 33 nC @ 18 V | 1118 pF @ 400 V | +23V, -5V | - | 183W (Tc) | 64mOhm @ 20.1A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
STMicroelectronics |
MOSFET N-CH 40V 119A POWERFLAT
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 119A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 27.6 nC @ 10 V | 1780 pF @ 25 V | ±20V | - | 94W (Tc) | 3.5mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
SOT-23, MOSFET
|
pacote: - |
Estoque51.744 |
|
MOSFET (Metal Oxide) | 50 V | 500mA (Ta) | 1.8V, 10V | 1V @ 250µA | 0.95 nC @ 4.5 V | 36 pF @ 25 V | ±20V | - | 500mW (Ta) | 1.45Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET 60V TDSON-8-7
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 25A/40A TSDSON
|
pacote: - |
Estoque14.688 |
|
MOSFET (Metal Oxide) | 30 V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 41 nC @ 10 V | 2600 pF @ 15 V | ±20V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | 2.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 25V 71.9A/100A PPAK
|
pacote: - |
Estoque33.915 |
|
MOSFET (Metal Oxide) | 25 V | 71.9A (Ta), 100A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 170 nC @ 10 V | 8150 pF @ 10 V | +20V, -16V | - | 6.25W (Ta), 104W (Tc) | 0.67mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Vishay Siliconix |
MOSFET P-CHANNEL 60V
|
pacote: - |
Estoque4.767 |
|
MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 570 pF @ 25 V | ±20V | - | 3.7W (Ta), 60W (Tc) | 280mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Taiwan Semiconductor Corporation |
650V, 4A, SINGLE N-CHANNEL POWER
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 4.5V @ 250µA | 13.46 nC @ 10 V | 549 pF @ 25 V | ±30V | - | 50W (Tc) | 3.37Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |