Página 871 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  871/1.401
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP030N10N3GHKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque7.792
MOSFET (Metal Oxide)
100V
100A (Tc)
6V, 10V
3.5V @ 275µA
206nC @ 10V
14800pF @ 50V
±20V
-
300W (Tc)
3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IRFS7430PBF
Infineon Technologies

MOSFET N-CH 40V 409A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.744
MOSFET (Metal Oxide)
40V
195A (Tc)
6V, 10V
3.9V @ 250µA
460nC @ 10V
14240pF @ 25V
±20V
-
375W (Tc)
1.2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR3715
Infineon Technologies

MOSFET N-CH 20V 54A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.488
MOSFET (Metal Oxide)
20V
54A (Tc)
4.5V, 10V
3V @ 250µA
17nC @ 4.5V
1060pF @ 10V
±20V
-
3.8W (Ta), 71W (Tc)
14 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AOD502
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 15A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque144.060
MOSFET (Metal Oxide)
25V
15A (Ta), 46A (Tc)
4.5V, 10V
2.4V @ 250µA
18nC @ 10V
1187pF @ 15V
±20V
-
2.5W (Ta), 50W (Tc)
8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7380ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7785pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacote: PowerPAK? SO-8
Estoque14.964
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
1.6V @ 250µA
185nC @ 10V
7785pF @ 15V
±12V
-
5.4W (Ta), 83W (Tc)
3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot RSS080N05FU6TB
Rohm Semiconductor

MOSFET N-CH 60V 8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque210.000
MOSFET (Metal Oxide)
60V
8A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot NTD4963N-35G
ON Semiconductor

MOSFET N-CH 30V 8.1A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque61.212
MOSFET (Metal Oxide)
30V
8.1A (Ta), 44A (Tc)
4.5V, 10V
2.5V @ 250µA
16.2nC @ 10V
1035pF @ 12V
±20V
-
1.1W (Ta), 35.7W (Tc)
9.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTTFS4943NTAG
ON Semiconductor

MOSFET N-CH 30V 8A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque2.560
MOSFET (Metal Oxide)
30V
8A (Ta), 41A (Tc)
4.5V, 10V
2.2V @ 250µA
20.4nC @ 10V
1386pF @ 15V
±20V
-
840mW (Ta), 22.3W (Tc)
7.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot NTR4501NT3G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Tj)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque73.908
MOSFET (Metal Oxide)
20V
3.2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
6nC @ 4.5V
200pF @ 10V
±12V
-
1.25W (Tj)
80 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot HUFA76439S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2745pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque19.200
MOSFET (Metal Oxide)
60V
75A (Tc)
4.5V, 10V
3V @ 250µA
84nC @ 10V
2745pF @ 25V
±16V
-
155W (Tc)
12 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SKP202VR
Sanken

MOSFET N-CH 200V 45A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.288
MOSFET (Metal Oxide)
200V
45A (Ta)
10V
4.5V @ 1mA
-
2000pF @ 25V
±30V
-
95W (Tc)
53 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
TO-263-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot AO4455
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 17A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque1.976.760
MOSFET (Metal Oxide)
30V
-
6V, 20V
2.6V @ 250µA
76nC @ 10V
3400pF @ 15V
±25V
-
3.1W (Ta)
6.2 mOhm @ 15A, 20V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot FDP2710
Fairchild/ON Semiconductor

MOSFET N-CH 250V 50A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tc)
  • Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque5.536
MOSFET (Metal Oxide)
250V
50A (Tc)
10V
5V @ 250µA
101nC @ 10V
7280pF @ 25V
±30V
-
260W (Tc)
42.5 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDS4675_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque20.190
MOSFET (Metal Oxide)
40V
11A (Ta)
4.5V, 10V
3V @ 250µA
56nC @ 4.5V
4350pF @ 20V
±20V
-
2.4W (Ta)
13 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
BUK9230-100B,118
Nexperia USA Inc.

MOSFET N-CH 100V 47A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3805pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 185°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque24.570
MOSFET (Metal Oxide)
100V
47A (Tc)
5V, 10V
2V @ 1mA
33nC @ 5V
3805pF @ 25V
±15V
-
167W (Tc)
28 mOhm @ 25A, 10V
-55°C ~ 185°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
SI8466EDB-T2-E1
Vishay Siliconix

MOSFET N-CH 8V 3.6A MICROFOOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-UFBGA, WLCSP
pacote: 4-UFBGA, WLCSP
Estoque96.018
MOSFET (Metal Oxide)
8V
-
1.2V, 4.5V
700mV @ 250µA
13nC @ 4.5V
710pF @ 4V
±5V
-
780mW (Ta), 1.8W (Tc)
43 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-UFBGA, WLCSP
IXTK5N250
IXYS

MOSFET N-CH 2500V 5A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacote: TO-264-3, TO-264AA
Estoque7.188
MOSFET (Metal Oxide)
2500V
5A (Tc)
10V
5V @ 1mA
200nC @ 10V
8560pF @ 25V
±30V
-
960W (Tc)
8.8 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
SCT3080ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 30A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 134W
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
pacote: -
Estoque1.362
SiCFET (Silicon Carbide)
650 V
30A (Tc)
18V
5.6V @ 5mA
48 nC @ 18 V
571 pF @ 500 V
+22V, -4V
-
134W
104mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
IPA60R520E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 8.1A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
8.1A (Tc)
10V
3.5V @ 230µA
23.4 nC @ 10 V
512 pF @ 100 V
±20V
-
29W (Tc)
520mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
DMTH4001SPS-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14023 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.09W (Ta), 187.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
4V @ 250µA
187 nC @ 10 V
14023 pF @ 20 V
±20V
-
3.09W (Ta), 187.5W (Tc)
1mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
DMN1008UFDF-7
Diodes Incorporated

MOSFET N-CH 12V 12.2A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacote: -
Estoque7.275
MOSFET (Metal Oxide)
12 V
12.2A (Ta)
2.5V, 4.5V
1V @ 250µA
23.4 nC @ 8 V
995 pF @ 6 V
±8V
-
700mW (Ta)
8mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
TPH3R10AQM-LQ
Toshiba Semiconductor and Storage

100V U-MOS X-H SOP-ADVANCE(N) 3.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque15.069
MOSFET (Metal Oxide)
100 V
120A (Tc)
6V, 10V
3.5V @ 500µA
83 nC @ 10 V
7400 pF @ 50 V
±20V
-
210W (Tc)
3.1mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
BTS114AE3045ANTMA1
Infineon Technologies

POWER FIELD-EFFECT TRANSISTOR, 1

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO220-3-5
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-TO220-3-5
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SUD23N06-31-BE3
Vishay Siliconix

MOSFET N-CH 60V 9.1A/21.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque5.970
MOSFET (Metal Oxide)
60 V
9.1A (Ta), 21.4A (Tc)
4.5V, 10V
3V @ 250µA
17 nC @ 10 V
670 pF @ 25 V
±20V
-
5.7W (Ta), 31.25W (Tc)
31mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC882N03MSG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 34 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
34 V
22A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
55 nC @ 10 V
4300 pF @ 15 V
±20V
-
2.5W (Ta), 69W (Tc)
2.6mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
SIHS36N50D-GE3
Vishay Siliconix

D SERIES POWER MOSFET SUPER-247,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacote: -
Estoque1.686
MOSFET (Metal Oxide)
500 V
36A (Tc)
10V
5V @ 250µA
125 nC @ 10 V
3233 pF @ 100 V
±30V
-
446W (Tc)
130mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
NTMFS6H836NLT1G
onsemi

MOSFET N-CH 80V 16A/77A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: -
Request a Quote
MOSFET (Metal Oxide)
80 V
16A (Ta), 77A (Tc)
4.5V, 10V
2V @ 95µA
34 nC @ 10 V
1950 pF @ 40 V
±20V
-
3.7W (Ta), 89W (Tc)
6.2mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
QM2421K-ML
MOSLEADER

Single P -20V -4A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMT10H025SK3-13
Diodes Incorporated

MOSFET N-CH 100V 41.2A TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque7.500
MOSFET (Metal Oxide)
100 V
41.2A (Tc)
6V, 10V
4V @ 250µA
21.4 nC @ 10 V
1544 pF @ 50 V
±20V
-
1.4W (Ta)
23mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
QM2402K-ML
MOSLEADER

Single N 20V 4.8A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-