Página 7 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  7/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SPD14N06S2-80
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: P-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque924.612
MOSFET (Metal Oxide)
55V
17A (Tc)
10V
4V @ 14µA
10nC @ 10V
400pF @ 25V
±20V
-
30W (Tc)
80 mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
P-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFU12N25D
Infineon Technologies

MOSFET N-CH 250V 14A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque15.492
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
5V @ 250µA
35nC @ 10V
810pF @ 25V
±30V
-
144W (Tc)
260 mOhm @ 8.4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
RJK6014DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 16A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 575 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque4.880
MOSFET (Metal Oxide)
600V
16A (Ta)
10V
-
45nC @ 10V
1800pF @ 25V
±30V
-
35W (Tc)
575 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot AOD210
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 70A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque354.060
MOSFET (Metal Oxide)
30V
23A (Ta), 70A (Tc)
4.5V, 10V
2.2V @ 250µA
58nC @ 10V
4300pF @ 15V
±20V
-
2.7W (Ta), 150W (Tc)
3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
NP48N055KLE-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 48A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 24A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.512
MOSFET (Metal Oxide)
55V
48A (Tc)
4.5V, 10V
2.5V @ 250µA
60nC @ 10V
3000pF @ 25V
±20V
-
1.8W (Ta), 85W (Tc)
17 mOhm @ 24A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT20F50B
Microsemi Corporation

MOSFET N-CH 500V 20A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque3.376
MOSFET (Metal Oxide)
500V
20A (Tc)
10V
5V @ 500µA
75nC @ 10V
2950pF @ 25V
±30V
-
290W (Tc)
300 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
2SK060100L
Panasonic Electronic Components

MOSFET N-CH 80V 500MA MINI-PWR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MiniP3-F1
  • Package / Case: TO-243AA
pacote: TO-243AA
Estoque7.936
MOSFET (Metal Oxide)
80V
500mA (Ta)
10V
3.5V @ 1mA
-
45pF @ 10V
20V
-
1W (Ta)
4 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
MiniP3-F1
TO-243AA
hot IRF9630STRR
Vishay Siliconix

MOSFET P-CH 200V 6.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.928
MOSFET (Metal Oxide)
200V
6.5A (Tc)
10V
4V @ 250µA
29nC @ 10V
700pF @ 25V
±20V
-
3W (Ta), 74W (Tc)
800 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF737LCS
Vishay Siliconix

MOSFET N-CH 300V 6.1A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque10.740
MOSFET (Metal Oxide)
300V
6.1A (Tc)
10V
4V @ 250µA
17nC @ 10V
430pF @ 25V
±30V
-
-
750 mOhm @ 3.7A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPC90R120C3X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque3.696
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB031NE7N3GATMA1
Infineon Technologies

MOSFET N-CH 75V 100A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 37.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.032
MOSFET (Metal Oxide)
75V
100A (Tc)
10V
3.8V @ 155µA
117nC @ 10V
8130pF @ 37.5V
±20V
-
214W (Tc)
3.1 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD65R650CEAUMA1
Infineon Technologies

MOSFET N-CH 650V 7A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque2.096
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
3.5V @ 210µA
23nC @ 10V
440pF @ 100V
±20V
-
86W (Tc)
650 mOhm @ 2.1A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPN50R800CEATMA1
Infineon Technologies

CONSUMER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque2.976
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TK10A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9.7A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque4.192
MOSFET (Metal Oxide)
600V
9.7A (Ta)
10V
3.7V @ 500µA
20nC @ 10V
700pF @ 300V
±30V
Super Junction
30W (Tc)
380 mOhm @ 4.9A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
DMP2170U-13
Diodes Incorporated

MOSFET PCH 20V 3.1A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque7.808
MOSFET (Metal Oxide)
20V
3.1A (Ta)
2.5V, 4.5V
1.25V @ 250µA
7.8nC @ 10V
303pF @ 10V
±12V
-
780mW (Ta)
90 mOhm @ 3.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMN10H220LQ-13
Diodes Incorporated

MOSFET BVDSS: 61V 100V SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque3.760
MOSFET (Metal Oxide)
100V
1.6A (Ta)
4.5V, 10V
2.5V @ 250µA
8.3nC @ 10V
401pF @ 25V
±16V
-
1.3W (Ta)
220 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
FQU12N20TU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque40.320
MOSFET (Metal Oxide)
200V
9A (Tc)
10V
5V @ 250µA
23nC @ 10V
910pF @ 25V
±30V
-
2.5W (Ta), 55W (Tc)
280 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRF1407STRLPBF
Infineon Technologies

MOSFET N-CH 75V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque22.416
MOSFET (Metal Oxide)
75V
100A (Tc)
10V
4V @ 250µA
250nC @ 10V
5600pF @ 25V
±20V
-
3.8W (Ta), 200W (Tc)
7.8 mOhm @ 78A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PJMP990N65EC_T0_00001
Panjit International Inc.

650V SUPER JUNCTION MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 47.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB-L
  • Package / Case: TO-220-3
pacote: -
Estoque12.000
MOSFET (Metal Oxide)
650 V
4.7A (Tc)
10V
4V @ 250µA
9.7 nC @ 10 V
306 pF @ 400 V
±30V
-
47.5W (Tc)
990mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB-L
TO-220-3
NVMFWS003N10MCT1G
onsemi

PTNG 100V STD SO8FL HE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 351µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: -
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MOSFET (Metal Oxide)
100 V
23.7A (Ta), 169A (Tc)
10V
4V @ 351µA
62 nC @ 10 V
4650 pF @ 50 V
±20V
-
3.8W (Ta), 194W (Tc)
3.1mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
DMT10H009LH3
Diodes Incorporated

MOSFET N-CH 100V 84A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Stub Leads, IPAK
pacote: -
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MOSFET (Metal Oxide)
100 V
84A (Tc)
4.5V, 10V
2.5V @ 250µA
20.2 nC @ 4.5 V
2309 pF @ 50 V
±20V
-
96W (Tc)
9mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251
TO-251-3 Stub Leads, IPAK
SIR450DP-T1-RE3
Vishay Siliconix

N-CHANNEL 45 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 113A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque17.505
MOSFET (Metal Oxide)
45 V
36A (Ta), 113A (Tc)
4.5V, 10V
2.3V @ 250µA
114 nC @ 10 V
5920 pF @ 20 V
+20V, -16V
-
4.8W (Ta), 48W (Tc)
1.8mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
UPA2521T1H-T2-AT
Renesas Electronics Corporation

MOSFET N-CH 30V 8A 8VSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSOF
  • Package / Case: 8-SMD, Flat Lead
pacote: -
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MOSFET (Metal Oxide)
30 V
8A (Ta)
-
2.5V @ 1mA
7.6 nC @ 5 V
780 pF @ 15 V
-
-
1W (Ta)
16.5mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-VSOF
8-SMD, Flat Lead
SIHA240N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 12A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacote: -
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MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
5V @ 250µA
23 nC @ 10 V
783 pF @ 100 V
±30V
-
31W (Tc)
240mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
WNSCM160120WQ
WeEn Semiconductors

WNSCM160120W/TO-247/STANDARD MAR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 736 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Ta)
  • Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: -
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MOSFET (Metal Oxide)
1200 V
24A (Ta)
20V
4.5V @ 3mA
35 nC @ 20 V
736 pF @ 1000 V
+25V, -10V
-
155W (Ta)
196mOhm @ 10A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AOD2N100M
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R6012JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 12A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque5.400
MOSFET (Metal Oxide)
600 V
12A (Tc)
15V
7V @ 2.5mA
28 nC @ 15 V
900 pF @ 100 V
±30V
-
160W (Tc)
390mOhm @ 6A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM080N03PQ56
Taiwan Semiconductor Corporation

30V, 73A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
30 V
14A (Ta), 73A (Tc)
4.5V, 10V
2.5V @ 250µA
14.4 nC @ 10 V
843 pF @ 15 V
±20V
-
2.6W (Ta), 69W (Tc)
8mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (5x6)
8-PowerTDFN