Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 90A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque4.992 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2V @ 40µA | 25nC @ 5V | 3200pF @ 15V | ±20V | - | 94W (Tc) | 5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.318.656 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | ±20V | - | 1.25W (Ta) | 98 mOhm @ 3A, 10V | - | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.592 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | ±30V | - | 2.5W (Ta) | 60 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 16A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque3.009.348 |
|
MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 45nC @ 10V | 2080pF @ 15V | ±12V | - | 2.5W (Ta), 4.45W (Tc) | 9.4 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13.4A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque225.960 |
|
MOSFET (Metal Oxide) | 30V | 13.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1452pF @ 15V | ±12V | - | 3.7W (Ta) | 11.5 mOhm @ 13.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 18A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque392.580 |
|
MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 38nC @ 10V | 1640pF @ 15V | ±20V | - | 3.1W (Ta), 5.4W (Tc) | 8.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 30V 68A LFPAK
|
pacote: SC-100, SOT-669 |
Estoque2.560 |
|
MOSFET (Metal Oxide) | 30V | 68A (Tc) | 4.5V, 10V | 2V @ 1mA | 12nC @ 5V | 1362pF @ 10V | ±20V | - | 62.5W (Tc) | 7.9 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 900V 15A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque5.200 |
|
MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | ±20V | - | 208W (Tc) | 340 mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V 3.1A TO-251-3
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque7.280 |
|
MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | - | 49W (Tc) | 1.5 Ohm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT5
|
pacote: SOT-23-5 Thin, TSOT-23-5 |
Estoque3.392 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.4nC @ 5V | 310pF @ 10V | ±20V | Schottky Diode (Isolated) | 1.25W (Ta) | 135 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 13A 8DFN
|
pacote: 8-PowerVDFN |
Estoque3.488 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 10nC @ 4.5V | 755pF @ 30V | ±20V | - | 24W (Tc) | 13.2 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacote: 8-PowerTDFN |
Estoque7.552 |
|
MOSFET (Metal Oxide) | 30V | 185A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 56nC @ 10V | 3479pF @ 15V | ±20V | - | 104W (Tc) | 1.8 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 300V 50A TO-268
|
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Estoque7.536 |
|
MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 6.5V @ 4mA | 65nC @ 10V | 3165pF @ 25V | ±20V | - | 690W (Tc) | 80 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH 650V 8A TO220
|
pacote: TO-220-3 Full Pack |
Estoque6.984 |
|
MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | ±20V | - | 30W (Tc) | 190 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 800V 4.5A TO-220FP
|
pacote: TO-220-3 Full Pack |
Estoque13.908 |
|
MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 5V @ 100µA | 13nC @ 10V | 270pF @ 100V | 30V | - | 25W (Tc) | 1.6 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET NCH 700V 5.4A TO251
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque16.878 |
|
MOSFET (Metal Oxide) | 700V | 5.4A (Tc) | 10V | 3.5V @ 100µA | 10.5nC @ 10V | 225pF @ 100V | ±20V | Super Junction | 53W (Tc) | 1.4 Ohm @ 1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Stub Leads, IPak |
||
Vishay Siliconix |
MOSFET N-CH 60V 14A TO220FP
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque135.576 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 37W (Tc) | 100 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque30.384 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | ±20V | - | 310W (Tc) | 9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 500V 14A TO247
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 11A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 14.6 nC @ 10 V | 655 pF @ 8 V | ±12V | - | 1.2W (Ta) | 13.5mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
NEC Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 55A | 4V, 10V | 2V @ 1mA | 45 nC @ 10 V | 2100 pF @ 10 V | 20V | - | 1.5W | 17mOhm @ 28A, 10V | -55°C ~ 150°C | Surface Mount | TO-263, TO-220SMD | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 40V 24A/123A DPAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 123A (Tc) | 10V | 3.5V @ 250µA | 100 nC @ 10 V | 4760 pF @ 25 V | ±20V | - | 4W (Ta), 107W (Tc) | 3.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Taiwan Semiconductor Corporation |
-30, -64, SINGLE P-CHANNEL
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 64A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 55 nC @ 10 V | 3234 pF @ 15 V | ±20V | - | 2.4W (Ta), 50W (Tc) | 8.5mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3.1x3.1) | 8-PowerWDFN |
||
Renesas |
UPA2706GR-E1-A - MOS FIELD EFFEC
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | 660 pF @ 10 V | ±20V | - | 3W (Ta), 15W (Tc) | 15mOhm @ 5.5A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
||
onsemi |
MOSFET N-CH 60V 7A/27A 8WDFN
|
pacote: - |
Estoque3.960 |
|
MOSFET (Metal Oxide) | 60 V | 7A (Ta), 27A (Tc) | 10V | 4V @ 20µA | 5.8 nC @ 10 V | 355 pF @ 30 V | ±20V | - | 2.5W (Ta), 31W (Tc) | 20.3mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN1006-
|
pacote: - |
Estoque28.605 |
|
MOSFET (Metal Oxide) | 20 V | 830mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.41 nC @ 4.5 V | 15.6 pF @ 16 V | ±8V | - | 380mW (Ta) | 990mOhm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
||
onsemi |
MOSFET P-CH 30V 11.5A/20A 8MLP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11.5A (Ta), 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 91 nC @ 10 V | 3970 pF @ 15 V | ±25V | - | 2.3W (Ta), 41W (Tc) | 10mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |