Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223
|
pacote: TO-261-4, TO-261AA |
Estoque5.808 |
|
MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 4.5V, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | ±20V | - | 1.8W (Ta) | 1.8 Ohm @ 660mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Nexperia USA Inc. |
MOSFET N-CH 60V D2PAK
|
pacote: - |
Estoque2.544 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.704 |
|
MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | - | 260nC @ 10V | 17700pF @ 10V | ±20V | - | 1.5W (Ta), 213W (Tc) | 1.8 mOhm @ 55A, 10V | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V 100A ATPAK
|
pacote: ATPAK (2 leads+tab) |
Estoque6.256 |
|
MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | - | 70nC @ 10V | 4600pF @ 10V | ±20V | - | 60W (Tc) | 5.6 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
Diodes Incorporated |
MOSFET N-CH 30V 7.1A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque3.840 |
|
MOSFET (Metal Oxide) | 30V | 7.1A (Ta) | 2.5V, 10V | 1.2V @ 250µA | - | 555pF @ 5V | ±12V | - | 2.5W (Ta) | 30 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 25V 10A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque179.952 |
|
MOSFET (Metal Oxide) | 25V | 10A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 13.2nC @ 5V | 1333pF @ 20V | ±20V | - | 1.36W (Ta), 62.5W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 500V 11A TO-247AC
|
pacote: TO-247-3 |
Estoque372.576 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4V @ 250µA | 84nC @ 10V | 1900pF @ 25V | ±20V | - | 180W (Tc) | 600 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1.7KV 100A
|
pacote: TO-247-3 |
Estoque6.864 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 100A (Tc) | - | - | - | - | - | - | 583W (Tc) | 25 mOhm @ 50A | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 14A TO-200AB
|
pacote: TO-220-3 |
Estoque2.464 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 5V @ 250µA | 58nC @ 10V | 1144pF @ 100V | ±30V | - | 208W (Tc) | 400 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 40V 110A SO8FL
|
pacote: 8-PowerTDFN |
Estoque2.112 |
|
MOSFET (Metal Oxide) | 40V | 27A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 35nC @ 10V | 2100pF @ 20V | ±20V | - | 3.7W (Ta), 68W (Tc) | 2.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 650V 76A X2 SOT-227
|
pacote: SOT-227-4, miniBLOC |
Estoque4.848 |
|
MOSFET (Metal Oxide) | 650V | 76A | 10V | 5V @ 250µA | 152nC @ 10V | 10900pF @ 25V | ±30V | - | 595W (Tc) | 30 mOhm @ 51A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
pacote: PowerPAK? SO-8 |
Estoque3.312 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 56nC @ 10V | 2815pF @ 15V | +20V, -16V | - | - | 2.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
STMicroelectronics |
MOSFET N-CH 650V 5A TO-220AB
|
pacote: TO-220-3 |
Estoque22.248 |
|
MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 315pF @ 100V | ±25V | - | 60W (Tc) | 900 mOhm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque110.868 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | ±20V | - | 230W (Tc) | 4.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1000V 6A TO263
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 6A (Tj) | 0V | 4.5V @ 250µA | 95 nC @ 5 V | 2650 pF @ 25 V | ±20V | Depletion Mode | 300W (Tc) | 2.2Ohm @ 3A, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Taiwan Semiconductor Corporation |
40V, 100A, SINGLE N-CHANNEL POWE
|
pacote: - |
Estoque14.985 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
POWER MOSFET, SINGLE, N-CHANNEL,
|
pacote: - |
Estoque4.497 |
|
MOSFET (Metal Oxide) | 40 V | 45A (Ta), 277A (Tc) | 4.5V, 10V | 2.2V @ 200µA | 100 nC @ 10 V | 7020 pF @ 20 V | ±20V | - | 3.8W (Ta), 146W (Tc) | 1mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S)
|
pacote: - |
Estoque7.590 |
|
MOSFET (Metal Oxide) | 40 V | 20.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 68 nC @ 10 V | 2550 pF @ 20 V | ±20V | - | 7.1W (Tc) | 9mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 11.5A (Ta), 49.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.2 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 3.1W | 13.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 700V 6.5A TO251-3
|
pacote: - |
Estoque780 |
|
MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 3.5V @ 70µA | 8.3 nC @ 400 V | 306 pF @ 400 V | ±16V | - | 34.7W (Tc) | 750mOhm @ 1.4A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Nexperia USA Inc. |
PXN6R2-25QL/SOT8002/MLPAK33
|
pacote: - |
Estoque14.937 |
|
MOSFET (Metal Oxide) | 25 V | 13.1A (Ta), 65A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 25.5 nC @ 10 V | 1200 pF @ 12.5 V | ±20V | - | 1.7W (Ta), 40.3W (Tc) | 6.2mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 156 nC @ 10 V | 4900 pF @ 25 V | ±20V | - | 270W (Tc) | 4.5mOhm @ 75A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 4V @ 250µA | 60 nC @ 10 V | 1275 pF @ 25 V | ±20V | - | 150W (Tc) | 220mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
pacote: - |
Estoque7.500 |
|
MOSFET (Metal Oxide) | 40 V | 225A (Tc) | 10V | 4V @ 250µA | 138 nC @ 10 V | 11085 pF @ 20 V | ±20V | - | 3.4W (Ta), 158W (Tc) | 1.2mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type K) | 8-PowerTDFN |
||
International Rectifier |
N-CHANNEL HERMETIC MOS HEXFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 400 V | 22A | - | - | - | - | - | - | 300W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 1.4A, 150V
|
pacote: - |
Estoque16.725 |
|
MOSFET (Metal Oxide) | 150 V | 1.4A (Tc) | 6V, 10V | 4V @ 250µA | 16 nC @ 10 V | 700 pF @ 25 V | ±20V | - | 1.56W (Tc) | 480mOhm @ 1A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
||
Goford Semiconductor |
MOSFET P-CH 30V 4.2A SOT-23
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 4.2A (Tc) | 4.5V, 10V | 1.3V @ 250µA | - | - | ±12V | - | 1.2W (Tc) | 55mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 150A, 100V
|
pacote: - |
Estoque2.835 |
|
MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 165 nC @ 10 V | 13300 pF @ 25 V | +20V, -12V | - | 275W (Tc) | 3.7mOhm @ 20A, 10V | -50°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
onsemi |
TRENCH 6 30V NCH
|
pacote: - |
Estoque4.500 |
|
MOSFET (Metal Oxide) | 30 V | 9A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 18.2 nC @ 10 V | 1670 pF @ 15 V | ±20V | - | 760mW (Ta), 25.5W (Tc) | 4.8mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
onsemi |
MOSFET N-CH 30V 19A/93A TO263AB
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 19A (Ta), 93A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 67 nC @ 10 V | 2525 pF @ 15 V | ±20V | - | 80W (Tc) | 5.7mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |