Página 504 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210559 ext. 706
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Transistores - FET, MOSFET - Simples

Registros 42.029
Página  504/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NTR2101PT1
ON Semiconductor

MOSFET P-CH 8V 3.7A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1173pF @ 4V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque4.976
MOSFET (Metal Oxide)
8V
-
1.8V, 4.5V
1V @ 250µA
15nC @ 4.5V
1173pF @ 4V
±8V
-
960mW (Ta)
52 mOhm @ 3.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot NDT455N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 11.5A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 11.5A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque139.140
MOSFET (Metal Oxide)
30V
11.5A (Ta)
4.5V, 10V
3V @ 250µA
61nC @ 10V
1220pF @ 15V
20V
-
3W (Ta)
15 mOhm @ 11.5A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
hot STD5N20T4
STMicroelectronics

MOSFET N-CH 200V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque194.400
MOSFET (Metal Oxide)
200V
5A (Tc)
10V
4V @ 250µA
27nC @ 10V
350pF @ 25V
±20V
-
45W (Tc)
800 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXFX14N100
IXYS

MOSFET N-CH 1000V 14A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque103.464
MOSFET (Metal Oxide)
1000V
14A (Tc)
10V
4.5V @ 4mA
220nC @ 10V
4500pF @ 25V
±20V
-
360W (Tc)
750 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
SIE818DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 75V 60A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (L)
  • Package / Case: 10-PolarPAK? (L)
pacote: 10-PolarPAK? (L)
Estoque7.360
MOSFET (Metal Oxide)
75V
60A (Tc)
4.5V, 10V
3V @ 250µA
95nC @ 10V
3200pF @ 38V
±20V
-
5.2W (Ta), 125W (Tc)
9.5 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (L)
10-PolarPAK? (L)
hot FQPF10N50CF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 10A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2096pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 610 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque18.576
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
4V @ 250µA
56nC @ 10V
2096pF @ 25V
±30V
-
48W (Tc)
610 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
IXTY2N80P
IXYS

MOSFET N-CH 800V 2A TO-252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.504
MOSFET (Metal Oxide)
800V
2A (Tc)
10V
5.5V @ 50µA
10.6nC @ 10V
440pF @ 25V
±30V
-
70W (Tc)
6 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
DMT3020LFDF-13
Diodes Incorporated

MOSFET NCH 30V 8.4A UDFN2020

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacote: 6-UDFN Exposed Pad
Estoque7.984
MOSFET (Metal Oxide)
30V
8.4A (Ta)
4.5V, 10V
2.5V @ 250µA
70nC @ 10V
393pF @ 15V
±20V
-
700mW (Ta), 1.8W (Tc)
17 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMG1013TQ-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT523

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
pacote: SOT-523
Estoque3.504
MOSFET (Metal Oxide)
20V
460mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.58nC @ 4.5V
59.76pF @ 16V
±6V
-
270mW (Ta)
700 mOhm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
IRFS7540TRLPBF
Infineon Technologies

MOSFET N CH 60V 110A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.608
MOSFET (Metal Oxide)
60V
110A (Tc)
6V, 10V
3.7V @ 100µA
130nC @ 10V
4555pF @ 25V
±20V
-
160W (Tc)
5.1 mOhm @ 65A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R5011ANX
Rohm Semiconductor

MOSFET N-CH 500V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
pacote: TO-220-2 Full Pack
Estoque10.056
MOSFET (Metal Oxide)
500V
11A (Ta)
10V
4.5V @ 1mA
30nC @ 10V
1000pF @ 25V
±30V
-
50W (Tc)
500 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot IRF3709PBF
Infineon Technologies

MOSFET N-CH 30V 90A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque6.352
MOSFET (Metal Oxide)
30V
90A (Tc)
4.5V, 10V
3V @ 250µA
41nC @ 5V
2672pF @ 16V
±20V
-
3.1W (Ta), 120W (Tc)
9 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPD50R3K0CEAUMA1
Infineon Technologies

MOSFET N-CH 500V 1.7A PG-TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque5.872
MOSFET (Metal Oxide)
500V
1.7A (Tc)
13V
3.5V @ 30µA
4.3nC @ 10V
84pF @ 100V
±20V
-
26W (Tc)
3 Ohm @ 400mA, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB160N04S4H1ATMA1
Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10920pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque18.240
MOSFET (Metal Oxide)
40V
160A (Tc)
10V
4V @ 110µA
137nC @ 10V
10920pF @ 25V
±20V
-
167W (Tc)
1.6 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
PMV48XPAR
Nexperia USA Inc.

MOSFET P-CH 20V 3.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque85.182
MOSFET (Metal Oxide)
20V
3.5A (Ta)
2.5V, 4.5V
1.25V @ 250µA
11nC @ 4.5V
1000pF @ 10V
±12V
-
510mW (Ta), 4.15W (Tc)
55 mOhm @ 2.4A, 4.5V
150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
FDA38N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V TO-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacote: TO-3P-3, SC-65-3
Estoque35.826
MOSFET (Metal Oxide)
300V
38A (Tc)
10V
5V @ 250µA
60nC @ 10V
2600pF @ 25V
±30V
-
312W (Tc)
85 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot AO3416
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 6.5A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3L
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque11.487.468
MOSFET (Metal Oxide)
20V
6.5A (Ta)
1.8V, 4.5V
1V @ 250µA
16nC @ 4.5V
1160pF @ 10V
±8V
-
1.4W (Ta)
22 mOhm @ 6.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
G2305
Goford Semiconductor

P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque26.790
MOSFET (Metal Oxide)
20 V
4.8A (Tc)
2.5V, 4.5V
900mV @ 250µA
7.8 nC @ 4.5 V
-
±10V
-
1.7W (Tc)
46mOhm @ 4.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
UPA2701GR-E1-AT
Renesas Electronics Corporation

MOSFET N-CH 30V 14A 8PSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 7A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOP
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
14A (Ta)
-
2.5V @ 1mA
12 nC @ 5 V
1200 pF @ 10 V
-
-
-
7.5mOhm @ 7A, 10V
-
Surface Mount
8-PSOP
8-SOIC (0.173", 4.40mm Width)
PJD45N06A-AU_L2_000A1
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
60 V
45A (Tc)
4.5V, 10V
2.5V @ 250µA
39 nC @ 10 V
2256 pF @ 25 V
±20V
-
75W (Tc)
12mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN4035L-7
Diodes Incorporated

MOSFET N-CH 40V 4.6A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque21.549
MOSFET (Metal Oxide)
40 V
4.6A (Ta)
4.5V, 10V
3V @ 250µA
12.5 nC @ 10 V
574 pF @ 20 V
±20V
-
720mW
42mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
STFH12N105K5
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
1050 V
8A (Tc)
10V
5V @ 100µA
18.4 nC @ 10 V
559 pF @ 100 V
±30V
-
29W (Tc)
1Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
SQS180ENW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3092 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.67mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
pacote: -
Estoque8.901
MOSFET (Metal Oxide)
80 V
72A (Tc)
10V
3.5V @ 250µA
56 nC @ 10 V
3092 pF @ 25 V
±20V
-
119W (Tc)
8.67mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
RJK0394DPA-02-J53
Renesas Electronics Corporation

POWER TRANSISTOR, MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
G18P03D3
Goford Semiconductor

P30V,RD(MAX)<10M@-10V,RD(MAX)<15

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3.15x3.05)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque17.955
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
30 nC @ 10 V
2060 pF @ 15 V
±20V
-
60W (Tc)
10mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3.15x3.05)
8-PowerVDFN
BSC0703LSATMA1
Infineon Technologies

MOSFET N-CH 60V 15A/64A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque5.220
MOSFET (Metal Oxide)
60 V
15A (Ta), 64A (Tc)
4.5V, 10V
2.3V @ 20µA
13 nC @ 4.5 V
1800 pF @ 30 V
±20V
-
2.5W (Ta), 46W (Tc)
6.5mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
RJK0358DPA-WS-J0
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRLMS2002TR
Infineon Technologies

MOSFET N-CH 20V 6.5A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6™(SOT23-6)
  • Package / Case: SOT-23-6
pacote: -
Request a Quote
MOSFET (Metal Oxide)
20 V
6.5A (Ta)
-
1.2V @ 250µA
22 nC @ 5 V
1310 pF @ 15 V
-
-
-
30mOhm @ 6.5A, 4.5V
-
Surface Mount
Micro6™(SOT23-6)
SOT-23-6