Página 500 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  500/1.401
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF6623TR1PBF
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
pacote: DirectFET? Isometric ST
Estoque9.648
MOSFET (Metal Oxide)
20V
16A (Ta), 55A (Tc)
4.5V, 10V
2.2V @ 250µA
17nC @ 4.5V
1360pF @ 10V
±20V
-
1.4W (Ta), 42W (Tc)
5.7 mOhm @ 15A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? ST
DirectFET? Isometric ST
IRFR13N20DTRR
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque6.128
MOSFET (Metal Oxide)
200V
13A (Tc)
10V
5.5V @ 250µA
38nC @ 10V
830pF @ 25V
±30V
-
110W (Tc)
235 mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NP90N06VLG-E1-AY
Renesas Electronics America

MOSFET N-CH 60V 90A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.644
MOSFET (Metal Oxide)
60V
90A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
6900pF @ 25V
±20V
-
1.2W (Ta), 105W (Tc)
7.8 mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXTA98N075T
IXYS

MOSFET N-CH 75V 98A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque103.464
MOSFET (Metal Oxide)
75V
98A (Tc)
10V
4V @ 100µA
-
-
±20V
-
230W (Tc)
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB2N90TM
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.104
MOSFET (Metal Oxide)
900V
2.2A (Tc)
10V
5V @ 250µA
15nC @ 10V
500pF @ 25V
±30V
-
3.13W (Ta), 85W (Tc)
7.2 Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFSL8405
Infineon Technologies

MOSFET N-CH 40V 120A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 163W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque7.328
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
3.9V @ 100µA
161nC @ 10V
5193pF @ 25V
±20V
-
163W (Tc)
2.3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
APTM10UM02FAG
Microsemi Corporation

MOSFET N-CH 100V 570A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 570A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1660W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacote: SP6
Estoque6.064
MOSFET (Metal Oxide)
100V
570A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1660W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IRF840LCSTRRPBF
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.832
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
4V @ 250µA
39nC @ 10V
1100pF @ 25V
±30V
-
3.1W (Ta), 125W (Tc)
850 mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot UPA2825T1S-E2-AT
Renesas Electronics America

MOSFET N-CH 30V 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 24A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque265.884
MOSFET (Metal Oxide)
30V
24A (Tc)
4.5V, 10V
-
57nC @ 10V
2600pF @ 10V
±20V
-
1.5W (Ta), 16.5W (Tc)
4.6 mOhm @ 24A, 10V
150°C (TJ)
Surface Mount
-
8-PowerWDFN
IPD50R500CEAUMA1
Infineon Technologies

MOSFET N-CH 550V 7.6A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque2.448
MOSFET (Metal Oxide)
550V
7.6A (Tc)
13V
3.5V @ 200µA
18.7nC @ 10V
433pF @ 100V
±20V
-
57W (Tc)
500 mOhm @ 2.3A, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
TK100S04N1L,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5490pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque2.800
MOSFET (Metal Oxide)
40V
100A (Ta)
4.5V, 10V
2.5V @ 500µA
76nC @ 10V
5490pF @ 10V
±20V
-
100W (Tc)
2.3 mOhm @ 50A, 10V
175°C (TJ)
Surface Mount
DPAK+
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STW3N150
STMicroelectronics

MOSFET N-CH 1500V 2.5A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque4.000
MOSFET (Metal Oxide)
1500V
2.5A (Tc)
10V
5V @ 250µA
29.3nC @ 10V
939pF @ 25V
±30V
-
140W (Tc)
9 Ohm @ 1.3A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STB10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.728
MOSFET (Metal Oxide)
950V
8A (Tc)
10V
5V @ 100µA
22nC @ 10V
630pF @ 100V
±30V
-
130W (Tc)
800 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP057N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque14.628
MOSFET (Metal Oxide)
80V
80A (Tc)
6V, 10V
3.5V @ 90µA
69nC @ 10V
4750pF @ 40V
±20V
-
150W (Tc)
5.7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
FDB86563_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 110A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 163nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.568
MOSFET (Metal Oxide)
60V
110A (Tc)
10V
4V @ 250µA
163nC @ 10V
10100pF @ 30V
±20V
-
333W (Tc)
1.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD7N80K5
STMicroelectronics

MOSFET N-CH 800V 6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque26.898
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
5V @ 100µA
13.4nC @ 10V
360pF @ 100V
±30V
-
110W (Tc)
1.2 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5C668NLT4G
onsemi

MOSFET N-CH 60V 15A/48A DPAK

  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque4.245
-
-
15A (Ta), 48A (Tc)
-
2.1V @ 250µA
-
-
-
-
-
8.9mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
HUF75344S3
Harris Corporation

75A, 55V, 0.008 OHM, N-CHANNEL U

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
pacote: -
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MOSFET (Metal Oxide)
55 V
75A (Tc)
10V
4V @ 250µA
210 nC @ 20 V
3200 pF @ 25 V
±20V
-
155W (Tc)
8mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK (TO-262)
TO-262-3 Long Leads, I2PAK, TO-262AA
BSZ018NE2LSIATMA1
Infineon Technologies

MOSFET N-CH 25V 22A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque74.508
MOSFET (Metal Oxide)
25 V
22A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
36 nC @ 10 V
2500 pF @ 12 V
±20V
-
2.1W (Ta), 69W (Tc)
1.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
AUIRLR3114ZTRL
International Rectifier

AUTOMOTIVE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
40 V
42A (Tc)
-
2.5V @ 100µA
56 nC @ 4.5 V
3810 pF @ 25 V
-
-
140W (Tc)
4.9mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ7E100ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 10A TSMT8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
pacote: -
Estoque7.851
MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
2.5V @ 1mA
53 nC @ 10 V
2370 pF @ 15 V
±20V
-
1.1W (Ta)
11.2mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead
RF1S45N06LE
Harris Corporation

45A, 60V, 0.028OHM, N-CHANNEL,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262 (I2PAK)
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
pacote: -
Request a Quote
MOSFET (Metal Oxide)
60 V
45A (Tc)
5V
2V @ 250µA
135 nC @ 10 V
2150 pF @ 25 V
±10V
-
142W (Tc)
28mOhm @ 45A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
IPQC60R040S7AXTMA1
Infineon Technologies

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22
  • Package / Case: 22-PowerBSOP Module
pacote: -
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MOSFET (Metal Oxide)
600 V
14A (Tc)
12V
4.5V @ 790µA
83 nC @ 12 V
-
±20V
-
272W (Tc)
40mOhm @ 13A, 12V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
IXFP05N100M
IXYS

MOSFET N-CH TO220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
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-
-
-
-
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-
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-
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-
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DMNH10H021SPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
100 V
58A (Tc)
10V
4V @ 250µA
71 nC @ 10 V
3789 pF @ 50 V
±20V
-
1.8W
28mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
SIR510DP-T1-RE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 126A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque36.864
MOSFET (Metal Oxide)
100 V
31A (Ta), 126A (Tc)
7.5V, 10V
4V @ 250µA
81 nC @ 10 V
4980 pF @ 50 V
±20V
-
6.25W (Ta), 104W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
AS3401
ANBON SEMICONDUCTOR (INT'L) LIMITED

P-CHANNEL ENHANCEMENT MODE MOSFE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque176.259
MOSFET (Metal Oxide)
30 V
4.4A (Ta)
2.5V, 10V
1.4V @ 250µA
7.2 nC @ 10 V
680 pF @ 15 V
±12V
-
1.2W (Ta)
55mOhm @ 4.4A, 10V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SISS06DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 47.6/172.6A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 47.6A (Ta), 172.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.38mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacote: -
Estoque13.980
MOSFET (Metal Oxide)
30 V
47.6A (Ta), 172.6A (Tc)
4.5V, 10V
2.2V @ 250µA
77 nC @ 10 V
3660 pF @ 15 V
+20V, -16V
-
5W (Ta), 65.7W (Tc)
1.38mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
DMN3061SW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 490mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacote: -
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MOSFET (Metal Oxide)
30 V
2.7A (Ta)
3.3V, 10V
1.8V @ 250µA
3.5 nC @ 4.5 V
278 pF @ 15 V
±20V
-
490mW (Ta)
60mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
QM2409K-ML
MOSLEADER

Single P -20V -3.1A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
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