Página 495 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  495/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSR92PL6327HTSA1
Infineon Technologies

MOSFET P-CH 250V 0.14A SC-59

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11 Ohm @ 140mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque2.080
MOSFET (Metal Oxide)
250V
140mA (Ta)
2.8V, 10V
1V @ 130µA
4.8nC @ 10V
109pF @ 25V
±20V
-
500mW (Ta)
11 Ohm @ 140mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC-59
TO-236-3, SC-59, SOT-23-3
IRFZ44VZSTRRPBF
Infineon Technologies

MOSFET N-CH 60V 57A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque5.184
MOSFET (Metal Oxide)
60V
57A (Tc)
10V
4V @ 250µA
65nC @ 10V
1690pF @ 25V
±20V
-
92W (Tc)
12 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7C3R8-80EJ
NXP

MOSFET N-CH 80V 186A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque3.440
MOSFET (Metal Oxide)
80V
-
-
-
-
-
-
-
-
-
-
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SI2304DS,215
Nexperia USA Inc.

MOSFET N-CH 30V 1.7A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque2.464
MOSFET (Metal Oxide)
30V
1.7A (Tc)
4.5V, 10V
2V @ 1mA
4.6nC @ 10V
195pF @ 10V
±20V
-
830mW (Tc)
117 mOhm @ 500mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
AUIRLSL3036
Infineon Technologies

MOSFET N-CH 60V 270A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque2.848
MOSFET (Metal Oxide)
60V
195A (Tc)
4.5V, 10V
2.5V @ 250µA
140nC @ 4.5V
11210pF @ 50V
±16V
-
380W (Tc)
2.4 mOhm @ 165A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRFU4292
Infineon Technologies

MOSFET N CH 250V 9.3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 345 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque5.152
MOSFET (Metal Oxide)
250V
9.3A (Tc)
10V
5V @ 50µA
20nC @ 10V
705pF @ 25V
±20V
-
100W (Tc)
345 mOhm @ 5.6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IXTQ44N50P
IXYS

MOSFET N-CH 500V 44A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 658W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacote: TO-3P-3, SC-65-3
Estoque474.864
MOSFET (Metal Oxide)
500V
44A (Tc)
10V
5V @ 250µA
98nC @ 10V
5440pF @ 25V
±30V
-
658W (Tc)
140 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot NTD4813NHT4G
ON Semiconductor

MOSFET N-CH 30V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque705.036
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
10nC @ 4.5V
940pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN44N80
IXYS

MOSFET N-CH 800V 44A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 44A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
pacote: SOT-227-4, miniBLOC
Estoque6.496
MOSFET (Metal Oxide)
800V
44A
10V
4.5V @ 8mA
380nC @ 10V
10000pF @ 25V
±20V
-
700W (Tc)
165 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
AUIRFP4310Z
Infineon Technologies

MOSFET NCH 100V 128A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7120pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 77A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.012
MOSFET (Metal Oxide)
100V
128A (Tc)
10V
4V @ 150µA
188nC @ 10V
7120pF @ 50V
±20V
-
278W (Tc)
6 mOhm @ 77A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHG33N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 31.6A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 31.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4026pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 109 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque10.296
MOSFET (Metal Oxide)
650V
31.6A (Tc)
10V
4V @ 250µA
171nC @ 10V
4026pF @ 100V
±30V
-
313W (Tc)
109 mOhm @ 16.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
hot FQPF20N06L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 15.7A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.85A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque48.216
MOSFET (Metal Oxide)
60V
15.7A (Tc)
5V, 10V
2.5V @ 250µA
13nC @ 5V
630pF @ 25V
±20V
-
30W (Tc)
55 mOhm @ 7.85A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot SI7192DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacote: PowerPAK? SO-8
Estoque789.828
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
5800pF @ 15V
±20V
-
6.25W (Ta), 104W (Tc)
1.9 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot STR2P3LLH6
STMicroelectronics

MOSFET P-CH 30V 2A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Tc)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque295.320
MOSFET (Metal Oxide)
30V
2A (Ta)
4.5V, 10V
2.5V @ 250µA
6nC @ 4.5V
639pF @ 25V
±20V
-
350mW (Tc)
56 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TP65H050G4WS
Transphorm

650 V 34 A GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: -
Estoque639
GaNFET (Gallium Nitride)
650 V
34A (Tc)
10V
4.8V @ 700µA
24 nC @ 10 V
1000 pF @ 400 V
±20V
-
119W (Tc)
60mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
FDD16AN08A0-F085
onsemi

MOSFET N-CH 75V 9A/50A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
75 V
9A (Ta), 50A (Tc)
6V, 10V
4V @ 250µA
47 nC @ 10 V
1874 pF @ 25 V
±20V
-
135W (Tc)
16mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
NVHL080N120SC1A
onsemi

SICFET N-CH 1200V 31A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
  • Vgs (Max): +25, -15V
  • FET Feature: -
  • Power Dissipation (Max): 178W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: -
Estoque2.670
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
20V
4.3V @ 5mA
56 nC @ 20 V
1670 pF @ 800 V
+25, -15V
-
178W (Tc)
110mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PJMF600N65E1_T0_00001
Panjit International Inc.

650V SUPER JUNCITON MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 554 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB-F
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: -
Estoque5.874
MOSFET (Metal Oxide)
700 V
7.3A (Tc)
10V
4V @ 250µA
17 nC @ 10 V
554 pF @ 400 V
±30V
-
32W (Tc)
600mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB-F
TO-220-3 Full Pack, Isolated Tab
CPH6318-TL-E
onsemi

MOSFET P-CH 12V 6A 6CPH

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
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MOSFET (Metal Oxide)
12 V
6A (Ta)
-
1V @ 1mA
22 nC @ 4.5 V
1900 pF @ 6 V
±8V
-
1.6W (Ta)
34mOhm @ 3A, 4.5V
150°C
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
SIR188LDP-T1-RE3
Vishay Siliconix

N-CHANNEL 60-V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25.8A (Ta), 93.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.75mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque13.215
MOSFET (Metal Oxide)
60 V
25.8A (Ta), 93.6A (Tc)
4.5V, 10V
2.5V @ 250µA
52 nC @ 10 V
2300 pF @ 30 V
±20V
-
5W (Ta), 65.7W (Tc)
3.75mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
MCQ12N06-TP
Micro Commercial Co

MOSFET N-CH 60V 12A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Estoque78
MOSFET (Metal Oxide)
60 V
12A (Tj)
4.5V, 10V
2.5V @ 250µA
31 nC @ 10 V
1988 pF @ 30 V
±20V
-
3.1W
9mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
PMV50XPAR
Nexperia USA Inc.

PMV50XPA/SOT23/TO-236AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 490mW (Ta), 4.63W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque7.575
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
1.8V, 4.5V
1V @ 250µA
12 nC @ 4.5 V
744 pF @ 20 V
±10V
-
490mW (Ta), 4.63W (Tc)
60mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
DMN6069SEQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT223 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 11W (Tc)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-4, TO-261AA
pacote: -
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MOSFET (Metal Oxide)
60 V
4.3A (Ta), 10A (Tc)
4.5V, 10V
3V @ 250µA
16 nC @ 10 V
825 pF @ 30 V
±20V
-
1.2W (Ta), 11W (Tc)
69mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
AO6405L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 5A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacote: -
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MOSFET (Metal Oxide)
30 V
5A (Ta)
4.5V, 10V
3V @ 250µA
18 nC @ 10 V
840 pF @ 15 V
±20V
-
2W (Ta)
52mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
DMP6111SVT-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
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MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
3V @ 250µA
23.2 nC @ 10 V
1283 pF @ 30 V
±20V
-
1.1W (Ta)
115mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
IXTA140P05T-TRL
IXYS

IXTA140P05T

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
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MOSFET (Metal Oxide)
50 V
140A (Tc)
10V
4V @ 250µA
200 nC @ 10 V
13500 pF @ 25 V
±15V
-
298W (Tc)
9mOhm @ 70A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MSC060SMA070B
Microchip Technology

SICFET N-CH 700V 39A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: -
Estoque33
SiCFET (Silicon Carbide)
700 V
39A (Tc)
20V
2.4V @ 1mA
56 nC @ 20 V
1175 pF @ 700 V
+23V, -10V
-
143W (Tc)
75mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
BSZ22DN20NS3GATMA1
Infineon Technologies

MOSFET N-CH 200V 7A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque10.812
MOSFET (Metal Oxide)
200 V
7A (Tc)
10V
4V @ 13µA
5.6 nC @ 10 V
430 pF @ 100 V
±20V
-
34W (Tc)
225mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN