Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 130A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque46.236 |
|
MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | ±20V | - | 300W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 0.7A SOT-223
|
pacote: TO-261-4, TO-261AA |
Estoque15.288 |
|
MOSFET (Metal Oxide) | 600V | 700mA (Ta) | 10V | 5.5V @ 135µA | 12.8nC @ 10V | 440pF @ 25V | ±20V | - | 1.8W (Ta) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223
|
pacote: TO-261-4, TO-261AA |
Estoque225.588 |
|
MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | ±20V | - | 1W (Ta) | 220 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 5.8A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque176.580 |
|
MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 35 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 20V 61A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque73.368 |
|
MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 700mV @ 250µA | 58nC @ 4.5V | 2500pF @ 15V | ±10V | - | 89W (Tc) | 13 mOhm @ 37A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 116A TO-220AB
|
pacote: TO-220-3 |
Estoque7.968 |
|
MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | ±16V | - | 180W (Tc) | 7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 2.1A TO-220F
|
pacote: TO-220-3 Full Pack |
Estoque3.392 |
|
MOSFET (Metal Oxide) | 900V | 2.1A (Tc) | 10V | 5V @ 250µA | 26nC @ 10V | 910pF @ 25V | ±30V | - | 43W (Tc) | 4.25 Ohm @ 1.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 30V 8.6A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque3.424 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 12nC @ 4.5V | 1225pF @ 12V | ±20V | - | 1.28W (Ta), 50W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Vishay Siliconix |
MOSFET P-CH 20V 3.8A 1206-8
|
pacote: 8-SMD, Flat Lead |
Estoque310.752 |
|
MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | - | ±12V | - | 1.25W (Ta) | 62 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
NXP |
MOSFET N-CH 200V 5.2A TO220F
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque5.280 |
|
MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 4V @ 1mA | 24nC @ 10V | 959pF @ 25V | ±20V | - | 25W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque21.600 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 14A I2PAK
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.440 |
|
MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 4V @ 250µA | 37nC @ 10V | 1250pF @ 50V | ±25V | - | 125W (Tc) | 299 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC
|
pacote: TO-247-3 |
Estoque6.416 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 3900pF @ 25V | ±20V | - | 280W (Tc) | 400 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
pacote: TO-220-3 Full Pack |
Estoque6.880 |
|
MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 4V @ 250µA | 51nC @ 10V | 1848pF @ 100V | ±30V | - | 69W (Tc) | 400 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.852.384 |
|
MOSFET (Metal Oxide) | 20V | 750mA (Ta) | 4.5V, 10V | 2.4V @ 250µA | - | 125pF @ 5V | ±20V | - | 400mW (Ta) | 90 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Texas Instruments |
MOSFET P-CH 20V 4A 9DSBGA
|
pacote: 9-UFBGA, DSBGA |
Estoque7.648 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | 1010pF @ 10V | -6V | - | 500mW (Ta) | 26 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
||
Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
|
pacote: 8-PowerTDFN |
Estoque6.336 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 74nC @ 10V | 6100pF @ 15V | ±20V | - | 2.5W (Ta), 83W (Tc) | 2.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CHA 60V 17.9A POWERDI
|
pacote: 8-PowerTDFN |
Estoque2.992 |
|
MOSFET (Metal Oxide) | 60V | 17.9A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 47.1nC @ 10V | 2962pF @ 30V | ±20V | - | 2.6W (Ta), 125W (Tc) | 4.9 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 30V 0.38A SOT323
|
pacote: SC-70, SOT-323 |
Estoque7.760 |
|
MOSFET (Metal Oxide) | 30V | 380mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 0.9nC @ 10V | 23.2pF @ 25V | ±20V | - | 300mW (Ta) | 2.8 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 30V 5A SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.762.204 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 2.5V, 4.5V | 1.1V @ 10µA | 6.8nC @ 4.5V | 650pF @ 25V | ±12V | - | 1.3W (Ta) | 29 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 1.4A SC70-3
|
pacote: SC-70, SOT-323 |
Estoque781.140 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 2.5V, 10V | 1.4V @ 250µA | 5.06nC @ 4.5V | 409pF @ 15V | ±12V | - | 350mW (Ta) | 150 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
||
Rohm Semiconductor |
MOSFET N-CH 650V 30A TO3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 5V @ 960µA | 56 nC @ 10 V | 2350 pF @ 25 V | ±20V | - | 86W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 5V @ 250µA | 107 nC @ 10 V | 4530 pF @ 25 V | ±30V | - | 330W (Tc) | 15mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-904 | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 450V 250MA SOT223
|
pacote: - |
Estoque11.577 |
|
MOSFET (Metal Oxide) | 450 V | 250mA (Tc) | 10V | 4V @ 250µA | 1.8 nC @ 10 V | 59.2 pF @ 25 V | ±30V | - | 13.9W (Tc) | 150Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 30V 2.7A/3.5A SOT23
|
pacote: - |
Estoque13.860 |
|
MOSFET (Metal Oxide) | 30 V | 2.7A (Ta), 3.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 6.2 nC @ 4.5 V | 340 pF @ 15 V | ±20V | - | 1.1W (Ta), 1.8W (Tc) | 88mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diotec Semiconductor |
IC
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 110A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 4.5 V | 1860 pF @ 15 V | ±20V | - | 56W (Tc) | 2.65mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET P-CH 60V 16.4A TO252
|
pacote: - |
Estoque15.339 |
|
MOSFET (Metal Oxide) | 60 V | 16.4A (Tc) | 10V | 4V @ 710µA | 27 nC @ 10 V | 1100 pF @ 30 V | ±20V | - | 63W (Tc) | 90mOhm @ 16.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |