Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 72A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.848 |
|
MOSFET (Metal Oxide) | 60V | 72A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | ±20V | - | 150W (Tc) | 12 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-251
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque5.152 |
|
MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 5.5V @ 80µA | 9.5nC @ 10V | 240pF @ 25V | ±20V | - | 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Microsemi Corporation |
MOSFET N-CH 1.2KV 15A ISOTOP
|
pacote: SOT-227-4, miniBLOC |
Estoque5.600 |
|
MOSFET (Metal Oxide) | 1200V | 15A (Tc) | 10V | 4V @ 2.5mA | 485nC @ 10V | 7800pF @ 25V | ±30V | - | 450W (Tc) | 800 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH
|
pacote: TO-254-3, TO-254AA (Straight Leads) |
Estoque6.752 |
|
MOSFET (Metal Oxide) | 400V | 14A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
ON Semiconductor |
MOSFET P-CH 50V 70MA SMCP
|
pacote: SC-75, SOT-416 |
Estoque5.680 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 150mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A POWER33
|
pacote: 8-PowerTDFN |
Estoque214.356 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 1mA | 34nC @ 10V | 2075pF @ 15V | ±20V | - | 2.3W (Ta), 41W (Tc) | 5.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 29A TO-220AB
|
pacote: TO-220-3 |
Estoque7.232 |
|
MOSFET (Metal Oxide) | 60V | 29A (Tc) | 4.5V, 10V | 3V @ 250µA | 28nC @ 10V | 900pF @ 25V | ±16V | - | 75W (Tc) | 35 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 17A TO-220AB
|
pacote: TO-220-3 |
Estoque2.048 |
|
MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 5V @ 250µA | 89nC @ 10V | 2210pF @ 25V | ±30V | - | 280W (Tc) | 350 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque1.202.688 |
|
MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 250pF @ 25V | ±20V | - | 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 335MA SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque2.656 |
|
MOSFET (Metal Oxide) | 55V | 335mA (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 1nC @ 8V | 40pF @ 10V | ±10V | - | 830mW (Tc) | 4 Ohm @ 500mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 850V 6.7A TO-220FP
|
pacote: TO-220-3 Full Pack |
Estoque84.720 |
|
MOSFET (Metal Oxide) | 850V | 6.7A (Tc) | 10V | 4.5V @ 100µA | 60nC @ 10V | 1870pF @ 25V | ±30V | - | 35W (Tc) | 1.4 Ohm @ 3.35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 100V 200A SOT-227
|
pacote: SOT-227-4, miniBLOC |
Estoque4.608 |
|
MOSFET (Metal Oxide) | 100V | 200A | 10V | 4.5V @ 250µA | 152nC @ 10V | 9400pF @ 25V | ±20V | - | 550W (Tc) | 5.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 1200V 13A ISOPLUS247
|
pacote: ISOPLUS247? |
Estoque4.336 |
|
MOSFET (Metal Oxide) | 1200V | 13A (Tc) | 10V | 6.5V @ 1mA | 193nC @ 10V | 11100pF @ 25V | ±30V | - | 290W (Tc) | 630 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 1000V 4A TO220F
|
pacote: TO-220-3 Full Pack |
Estoque3.120 |
|
MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 4.5V @ 250µA | 23nC @ 10V | 1150pF @ 25V | ±30V | - | 42W (Tc) | 4.2 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque2.112 |
|
MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 4V @ 250µA | 18.8nC @ 10V | 981pF @ 100V | ±30V | - | 125W (Tc) | 380 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6
|
pacote: TO-263-7, D2Pak (6 Leads + Tab) |
Estoque4.224 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5V @ 250µA | 160nC @ 10V | 11550pF @ 25V | ±20V | - | 300W (Tc) | 2.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-7, D2Pak (6 Leads + Tab) |
||
Vishay Siliconix |
MOSFET N-CH 40V 20.7A
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.936 |
|
MOSFET (Metal Oxide) | 40V | 20.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 62nC @ 10V | 2440pF @ 20V | ±20V | - | 7.1W (Tc) | 9 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 100V 3.8A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque179.544 |
|
MOSFET (Metal Oxide) | 100V | 3.8A (Tc) | 6V, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | ±20V | - | 2.4W (Ta), 4.8W (Tc) | 158 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 55V 11A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque94.848 |
|
MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | - | 38W (Tc) | 175 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 60V 9.2A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque61.734 |
|
MOSFET (Metal Oxide) | 60V | 9.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 864pF @ 30V | ±20V | - | 1.5W (Ta) | 18 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 20V 3.3A MICRO
|
pacote: 4-UFBGA |
Estoque72.000 |
|
MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 900mV @ 250µA | 18nC @ 8V | 630pF @ 10V | ±8V | - | 780mW (Ta), 1.8W (Tc) | 44 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Micro Foot (1x1) | 4-UFBGA |
||
Micro Commercial Co |
MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.6A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 10 nC @ 10 V | 770 pF @ 10 V | ±12V | - | 1.8W (Tj) | 40mOhm @ 5.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
||
Taiwan Semiconductor Corporation |
600V, 20A, SINGLE N-CHANNEL POWE
|
pacote: - |
Estoque11.520 |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 5V @ 1mA | 39 nC @ 10 V | 1535 pF @ 300 V | ±30V | - | 70W (Tc) | 196mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque14.463 |
|
MOSFET (Metal Oxide) | 30 V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | 2436 pF @ 25 V | ±20V | - | 2W (Ta), 39W (Tc) | 3.8mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
||
onsemi |
NFET D2PAK 400V 1.8R TR
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET P-CH 150V 36A TO263
|
pacote: - |
Estoque5.556 |
|
MOSFET (Metal Oxide) | 150 V | 36A (Tc) | 10V | 4.5V @ 250µA | 55 nC @ 10 V | 3100 pF @ 25 V | ±20V | - | 300W (Tc) | 110mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 200V 11A TO220AB
|
pacote: - |
Estoque1.719 |
|
MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 1200 pF @ 25 V | ±20V | - | 125W (Tc) | 500mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 72A TO247
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 4.75V @ 250µA | 106 nC @ 10 V | 4850 pF @ 100 V | ±25V | - | 446W (Tc) | 36mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
SCHOTTKY DIODES
|
pacote: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 38A | 18V | 3.6V @ 5mA | 41 nC @ 18 V | 890 pF @ 1000 V | +22V, -8V | - | 220W (Tc) | 85mOhm @ 20A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |