Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 58A D-PAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.864 |
|
MOSFET (Metal Oxide) | 30V | 58A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 16nC @ 4.5V | 1350pF @ 15V | ±20V | - | 55W (Tc) | 8.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 11.5A TO-220AB
|
pacote: TO-220-3 |
Estoque4.032 |
|
MOSFET (Metal Oxide) | 60V | 11.5A (Tc) | 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | ±10V | - | 40W (Tc) | 170 mOhm @ 5.8A, 4.5V | -55°C ~ 150°C (TJ) | Through Hole | P-TO220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque22.800 |
|
MOSFET (Metal Oxide) | 20V | 25A (Tc) | 2.5V, 10V | 2V @ 250µA | 18nC @ 10V | 900pF @ 10V | ±16V | - | 2.5W (Ta), 33W (Tc) | 18 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 7.7A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque1.390.584 |
|
MOSFET (Metal Oxide) | 30V | 7.7A (Ta) | 4.5V, 10V | 2V @ 250µA | 16nC @ 10V | 900pF @ 15V | ±20V | Schottky Diode (Body) | 1.7W (Ta) | 17.5 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 25V 39A LFPAK
|
pacote: SC-100, SOT-669 |
Estoque7.328 |
|
MOSFET (Metal Oxide) | 25V | 39A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 11nC @ 10V | 678pF @ 12V | ±20V | - | 30W (Tc) | 10.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 14A TO-3PN
|
pacote: TO-3P-3, SC-65-3 |
Estoque3.392 |
|
MOSFET (Metal Oxide) | 500V | 14A (Ta) | 10V | 4V @ 1mA | 58nC @ 10V | 2600pF @ 10V | ±30V | - | 80W (Tc) | 400 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 10A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque182.400 |
|
MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 4V @ 250µA | 7.5nC @ 10V | 310pF @ 25V | ±25V | - | 2.5W (Ta), 28W (Tc) | 140 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.312 |
|
MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 250pF @ 25V | ±20V | - | 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 500V 5.4A TO-220FP
|
pacote: TO-220-3 Full Pack |
Estoque7.600 |
|
MOSFET (Metal Oxide) | 500V | 5.4A (Tc) | 13V | 3.5V @ 200µA | 18.7nC @ 10V | 433pF @ 100V | ±20V | - | 28W (Tc) | 500 mOhm @ 2.3A, 13V | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 60V 90A DPAK-4
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.568 |
|
MOSFET (Metal Oxide) | 60V | 18A (Ta), 98A (Tc) | 10V | 4V @ 250µA | 82nC @ 10V | 6000pF @ 25V | ±20V | - | 4.1W (Ta), 115W (Tc) | 5.7 mOhm @ 48A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247
|
pacote: TO-247-3 |
Estoque8.352 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 4.5V @ 630µ | 11nC @ 10V | 1750pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Texas Instruments |
MOSFET N-CH 60V 50A TO220-3
|
pacote: TO-220-3 |
Estoque7.368 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 6V, 10V | 3.5V @ 250µA | 18nC @ 10V | 1480pF @ 30V | ±20V | - | 94W (Tc) | 14 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 40A POWER33
|
pacote: 8-PowerTDFN |
Estoque7.392 |
|
MOSFET (Metal Oxide) | 30V | 30A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 76nC @ 10V | 5170pF @ 15V | ±20V | - | 3W (Ta), 78W (Tc) | 2.2 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ? 33 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 60A LL POWER56
|
pacote: 8-PowerTDFN |
Estoque31.824 |
|
MOSFET (Metal Oxide) | 80V | 13A (Ta), 60A (Tc) | 6V, 10V | 4V @ 250µA | 55nC @ 10V | 3000pF @ 50V | ±20V | - | 2.5W (Ta), 104W (Tc) | 7.65 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 100V 7.5A PPAK SO-8
|
pacote: PowerPAK? SO-8 |
Estoque2.000 |
|
MOSFET (Metal Oxide) | 100V | 7.5A (Tc) | 6V, 10V | 3.5V @ 250µA | 8nC @ 10V | 210pF @ 50V | ±20V | - | 3.7W (Ta), 23W (Tc) | 195 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET N-CH 650V 8.5A TO-220AB
|
pacote: TO-220-3 |
Estoque5.328 |
|
MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | ±30V | - | 167W (Tc) | 930 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 3.5A TSMT
|
pacote: SC-96 |
Estoque71.640 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10nC @ 10V | 475pF @ 15V | ±20V | - | 1W (Ta) | 50 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
STMicroelectronics |
MOSFET N-CH 500V 110A MAX247
|
pacote: TO-247-3 |
Estoque6.752 |
|
MOSFET (Metal Oxide) | 500V | 110A (Tc) | 10V | 4V @ 250µA | 326nC @ 10V | 9600pF @ 100V | ±25V | - | 625W (Tc) | 22 mOhm @ 52A, 10V | -55°C ~ 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 4.3A 8POWERFLAT
|
pacote: 8-PowerVDFN |
Estoque6.960 |
|
MOSFET (Metal Oxide) | 650V | 4.3A (Ta), 22.5A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4200pF @ 100V | ±25V | - | 2.8W (Ta), 189W (Tc) | 69 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFLAT? (8x8) | 8-PowerVDFN |
||
YAGEO XSEMI |
MOSFET P-CH 40V 45A TO252
|
pacote: - |
Estoque3.000 |
|
MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 40 nC @ 4.5 V | 2720 pF @ 25 V | ±20V | - | 54.3W (Tc) | 16mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Micro Commercial Co |
MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 220A (Tc) | 6V, 10V | 4V @ 250µA | 155 nC @ 10 V | 9177 pF @ 75 V | ±20V | - | 312.5W (Tj) | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 40V 16A/50A TO252AA
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 60 nC @ 5 V | 5530 pF @ 25 V | ±20V | - | 153W (Tc) | 5.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 4V @ 250µA | 79.5 nC @ 10 V | 6968 pF @ 20 V | ±20V | - | 3.06W (Ta), 150W (Tc) | 2.4mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type K) | 8-PowerTDFN |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque17.820 |
|
MOSFET (Metal Oxide) | 60 V | 4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 5.1 nC @ 4.5 V | 509 pF @ 15 V | ±20V | - | 3.1W (Ta) | 100mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Taiwan Semiconductor Corporation |
-60V, -18A, SINGLE P-CHANNEL POW
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 16.4 nC @ 10 V | 870 pF @ 30 V | ±20V | - | 20W (Tc) | 68mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
N-CHANNEL 150 V (D-S) 175C MOSFE
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 30.8A (Ta), 90.9A (Tc) | 7.5V, 10V | 4V @ 250µA | 71 nC @ 10 V | 3740 pF @ 75 V | ±20V | - | 7.5W (Ta), 150W (Tc) | 7.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
||
IXYS |
MOSFET N-CH 2500V 3A TO264
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 2500 V | 3A (Tc) | 10V | 5V @ 1mA | 230 nC @ 10 V | 5400 pF @ 25 V | ±20V | - | 417W (Tc) | 10Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 1200V 3A TO263
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 5V @ 1.5mA | 39 nC @ 10 V | 1050 pF @ 25 V | ±20V | - | 200W (Tc) | 4.5Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
TRENCH 40<-<100V PG-TO263-3
|
pacote: - |
Estoque2.880 |
|
MOSFET (Metal Oxide) | 80 V | 170A (Tc) | 6V, 10V | 3.8V @ 267µA | 255 nC @ 10 V | 12000 pF @ 40 V | ±20V | - | 300W (Tc) | 1.65mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 26A TO247-4
|
pacote: - |
Estoque129 |
|
MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 4V @ 410µA | 36 nC @ 10 V | 1544 pF @ 400 V | ±20V | - | 95W (Tc) | 120mOhm @ 8.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |