Página 411 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos

AUIRF3205ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque61.800

MOSFET (Metal Oxide)

55V

75A (Tc)

10V

4V @ 250µA

110nC @ 10V

3450pF @ 25V

±20V

-

170W (Tc)

6.5 mOhm @ 66A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF5806

Infineon Technologies

MOSFET P-CH 20V 4A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 86 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Micro6?(TSOP-6)
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacote: SOT-23-6 Thin, TSOT-23-6

Estoque12.120

MOSFET (Metal Oxide)

20V

4A (Ta)

2.5V, 4.5V

1.2V @ 250µA

11.4nC @ 4.5V

594pF @ 15V

±20V

-

2W (Ta)

86 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

Micro6?(TSOP-6)

SOT-23-6 Thin, TSOT-23-6

IRFS23N15D

Infineon Technologies

MOSFET N-CH 150V 23A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque903.912

MOSFET (Metal Oxide)

150V

23A (Tc)

10V

5.5V @ 250µA

56nC @ 10V

1200pF @ 25V

±30V

-

3.8W (Ta), 136W (Tc)

90 mOhm @ 14A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI6473DQ-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 6.2A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

pacote: 8-TSSOP (0.173", 4.40mm Width)

Estoque5.312

MOSFET (Metal Oxide)

20V

6.2A (Ta)

1.8V, 4.5V

450mV @ 250µA (Min)

70nC @ 5V

-

±8V

-

1.08W (Ta)

12.5 mOhm @ 9.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP

8-TSSOP (0.173", 4.40mm Width)

NTB75N03-006

ON Semiconductor

MOSFET N-CH 30V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque5.376

MOSFET (Metal Oxide)

30V

75A (Tc)

10V

2V @ 250µA

75nC @ 5V

5635pF @ 25V

±20V

-

2.5W (Ta), 125W (Tc)

6.5 mOhm @ 37.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK7526-100B,127

Nexperia USA Inc.

MOSFET N-CH 100V 49A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2891pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: TO-220-3

Estoque5.216

MOSFET (Metal Oxide)

100V

49A (Tc)

10V

4V @ 1mA

38nC @ 10V

2891pF @ 25V

±20V

-

157W (Tc)

26 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IXFN48N50Q

IXYS

MOSFET N-CH 500V 48A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 48A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

pacote: SOT-227-4, miniBLOC

Estoque5.584

MOSFET (Metal Oxide)

500V

48A

10V

4V @ 4mA

190nC @ 10V

7000pF @ 25V

±20V

-

500W (Tc)

100 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

N0412N-S19-AY

Renesas Electronics America

MOSFET N-CH 40V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacote: TO-220-3

Estoque2.336

MOSFET (Metal Oxide)

40V

100A (Ta)

10V

-

100nC @ 10V

5550pF @ 25V

±20V

-

1.5W (Ta), 119W (Tc)

3.7 mOhm @ 50A, 10V

150°C (TJ)

Through Hole

TO-220

TO-220-3

FDMC86183

Fairchild/ON Semiconductor

PTNG 100/20V NCH TRENCH MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Package / Case: 8-PowerWDFN

pacote: 8-PowerWDFN

Estoque6.928

MOSFET (Metal Oxide)

100V

47A (Tc)

6V, 10V

4V @ 90µA

21nC @ 10V

1515pF @ 50V

±20V

-

52W (Tc)

12.8 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (3.3x3.3), Power33

8-PowerWDFN

STF15N80K5

STMicroelectronics

MOSFET N-CH 800V 14A TO-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

pacote: TO-220-3 Full Pack

Estoque2.000

MOSFET (Metal Oxide)

800V

14A (Tc)

10V

5V @ 100µA

32nC @ 10V

1100pF @ 100V

±30V

-

35W (Tc)

375 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

TSM15N50CZ C0G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2263pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacote: TO-220-3

Estoque3.984

MOSFET (Metal Oxide)

500V

14A (Tc)

10V

4V @ 250µA

39nC @ 10V

2263pF @ 25V

±30V

-

440 mOhm @ 7A, 10V

150°C (TJ)

Through Hole

TO-220

TO-220-3

TSM170N06CH C5G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacote: TO-251-3 Short Leads, IPak, TO-251AA

Estoque5.088

MOSFET (Metal Oxide)

60V

38A (Tc)

4.5V, 10V

2.5V @ 250µA

28.5nC @ 10V

900pF @ 25V

±20V

-

46W (Tc)

17 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-251 (IPAK)

TO-251-3 Short Leads, IPak, TO-251AA

AUIRF2804L

Infineon Technologies

MOSFET N-CH 40V 195A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacote: TO-262-3 Long Leads, I2Pak, TO-262AA

Estoque53.940

MOSFET (Metal Oxide)

40V

195A (Tc)

10V

4V @ 250µA

240nC @ 10V

6450pF @ 25V

±20V

-

300W (Tc)

2 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

STN1NF10

STMicroelectronics

MOSFET N-CH 100V 1A SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

pacote: TO-261-4, TO-261AA

Estoque1.028.004

MOSFET (Metal Oxide)

100V

1A (Tc)

10V

4V @ 250µA

6nC @ 10V

105pF @ 25V

±20V

-

2.5W (Tc)

800 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

ZVP2110A

Diodes Incorporated

MOSFET P-CH 100V 0.23A TO92-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

pacote: TO-226-3, TO-92-3 (TO-226AA)

Estoque29.640

MOSFET (Metal Oxide)

100V

230mA (Ta)

10V

3.5V @ 1mA

-

100pF @ 25V

±20V

-

700mW (Ta)

8 Ohm @ 375mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-92-3

TO-226-3, TO-92-3 (TO-226AA)

DMP3028LPSW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI506

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

pacote: -

Request a Quote

MOSFET (Metal Oxide)

30 V

21A (Tc)

4.5V, 10V

2.4V @ 250µA

22 nC @ 10 V

1421 pF @ 15 V

±20V

-

1.28W (Ta), 2.1W (Tc)

28mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount, Wettable Flank

PowerDI5060-8 (Type UX)

8-PowerTDFN

NVMJST1D2N04CTXG

onsemi

TRENCH 6 40V LFPAK 5X7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 451A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-TCPAK
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)

pacote: -

Estoque9.000

MOSFET (Metal Oxide)

40 V

451A (Tc)

10V

4V @ 200µA

82 nC @ 10 V

5340 pF @ 20 V

±20V

-

454W (Tc)

1.25mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

10-TCPAK

10-PowerLSOP (0.209", 5.30mm Width)

2SJ664-E-SY

Sanyo

MOSFET P-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

AOI950A70

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 5A TO251A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 56.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251A
Package / Case: TO-251-3 Stub Leads, IPAK

pacote: -

Estoque10.383

MOSFET (Metal Oxide)

700 V

5A (Tc)

10V

4.1V @ 250µA

10 nC @ 10 V

461 pF @ 100 V

±20V

-

56.5W (Tc)

950mOhm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-251A

TO-251-3 Stub Leads, IPAK

TK3A90E-S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacote: -

Estoque129

MOSFET (Metal Oxide)

900 V

2.5A (Ta)

10V

4V @ 250µA

15 nC @ 10 V

650 pF @ 25 V

±30V

-

35W (Tc)

4.6Ohm @ 1.3A, 10V

150°C

Through Hole

TO-220SIS

TO-220-3 Full Pack

AUIRFS3107-7TRL

Infineon Technologies

MOSFET N-CH 75V 240A D2PAK-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

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MOSFET (Metal Oxide)

75 V

240A (Tc)

-

4V @ 250µA

240 nC @ 10 V

9200 pF @ 50 V

-

370W (Tc)

2.6mOhm @ 160A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (7-Lead)

TO-263-7, D2PAK (6 Leads + Tab)

UPA2719GR-E2-AT

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

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-

SIHP22N60AE-BE3

Vishay Siliconix

N-CHANNEL 600V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: -

Estoque5.838

MOSFET (Metal Oxide)

600 V

20A (Tc)

10V

4V @ 250µA

96 nC @ 10 V

1451 pF @ 100 V

±30V

-

179W (Tc)

180mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

FDZ372NZ

Fairchild Semiconductor

MOSFET N-CH 20V 4.7A 4WLCSP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-WLCSP (1x1)
Package / Case: 4-XFBGA, WLCSP

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MOSFET (Metal Oxide)

20 V

4.7A (Ta)

-

1V @ 250µA

9.8 nC @ 4.5 V

685 pF @ 10 V

-

1.7W (Ta)

50mOhm @ 2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

4-WLCSP (1x1)

4-XFBGA, WLCSP

2SJ659-E

onsemi

PCH 4V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

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-

BUK9Y1R9-40HX

Nexperia USA Inc.

BUK9Y1R9-40H/SOT669/LFPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +16V, -10V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

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-

120A (Tj)

-

+16V, -10V

-

IXTA1R6N100D2-TRL

IXYS

MOSFET N-CH 1000V 1.6A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

1000 V

1.6A (Tj)

0V

4.5V @ 100µA

27 nC @ 5 V

645 pF @ 25 V

±20V

Depletion Mode

100W (Tc)

10Ohm @ 800mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

AO3496

Alpha & Omega Semiconductor Inc.

MOSFET N-CH SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRF3205ZS	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque61.800	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3450pF @ 25V	±20V	-	170W (Tc)	6.5 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF5806	Infineon Technologies	MOSFET P-CH 20V 4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 86 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6 Thin, TSOT-23-6	pacote: SOT-23-6 Thin, TSOT-23-6	Estoque12.120	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	1.2V @ 250µA	11.4nC @ 4.5V	594pF @ 15V	±20V	-	2W (Ta)	86 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6 Thin, TSOT-23-6
IRFS23N15D	Infineon Technologies	MOSFET N-CH 150V 23A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque903.912	MOSFET (Metal Oxide)	150V	23A (Tc)	10V	5.5V @ 250µA	56nC @ 10V	1200pF @ 25V	±30V	-	3.8W (Ta), 136W (Tc)	90 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI6473DQ-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 6.2A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.08W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	pacote: 8-TSSOP (0.173", 4.40mm Width)	Estoque5.312	MOSFET (Metal Oxide)	20V	6.2A (Ta)	1.8V, 4.5V	450mV @ 250µA (Min)	70nC @ 5V	-	±8V	-	1.08W (Ta)	12.5 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
NTB75N03-006	ON Semiconductor	MOSFET N-CH 30V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque5.376	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	2V @ 250µA	75nC @ 5V	5635pF @ 25V	±20V	-	2.5W (Ta), 125W (Tc)	6.5 mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7526-100B,127	Nexperia USA Inc.	MOSFET N-CH 100V 49A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2891pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: TO-220-3	Estoque5.216	MOSFET (Metal Oxide)	100V	49A (Tc)	10V	4V @ 1mA	38nC @ 10V	2891pF @ 25V	±20V	-	157W (Tc)	26 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFN48N50Q	IXYS	MOSFET N-CH 500V 48A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	pacote: SOT-227-4, miniBLOC	Estoque5.584	MOSFET (Metal Oxide)	500V	48A	10V	4V @ 4mA	190nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	100 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
N0412N-S19-AY	Renesas Electronics America	MOSFET N-CH 40V 100A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacote: TO-220-3	Estoque2.336	MOSFET (Metal Oxide)	40V	100A (Ta)	10V	-	100nC @ 10V	5550pF @ 25V	±20V	-	1.5W (Ta), 119W (Tc)	3.7 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
FDMC86183	Fairchild/ON Semiconductor	PTNG 100/20V NCH TRENCH MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	pacote: 8-PowerWDFN	Estoque6.928	MOSFET (Metal Oxide)	100V	47A (Tc)	6V, 10V	4V @ 90µA	21nC @ 10V	1515pF @ 50V	±20V	-	52W (Tc)	12.8 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN
STF15N80K5	STMicroelectronics	MOSFET N-CH 800V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	pacote: TO-220-3 Full Pack	Estoque2.000	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 100µA	32nC @ 10V	1100pF @ 100V	±30V	-	35W (Tc)	375 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
TSM15N50CZ C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2263pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacote: TO-220-3	Estoque3.984	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	39nC @ 10V	2263pF @ 25V	±30V	-	-	440 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
TSM170N06CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	pacote: TO-251-3 Short Leads, IPak, TO-251AA	Estoque5.088	MOSFET (Metal Oxide)	60V	38A (Tc)	4.5V, 10V	2.5V @ 250µA	28.5nC @ 10V	900pF @ 25V	±20V	-	46W (Tc)	17 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
AUIRF2804L	Infineon Technologies	MOSFET N-CH 40V 195A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacote: TO-262-3 Long Leads, I2Pak, TO-262AA	Estoque53.940	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	4V @ 250µA	240nC @ 10V	6450pF @ 25V	±20V	-	300W (Tc)	2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
STN1NF10	STMicroelectronics	MOSFET N-CH 100V 1A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacote: TO-261-4, TO-261AA	Estoque1.028.004	MOSFET (Metal Oxide)	100V	1A (Tc)	10V	4V @ 250µA	6nC @ 10V	105pF @ 25V	±20V	-	2.5W (Tc)	800 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVP2110A	Diodes Incorporated	MOSFET P-CH 100V 0.23A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	pacote: TO-226-3, TO-92-3 (TO-226AA)	Estoque29.640	MOSFET (Metal Oxide)	100V	230mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	8 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DMP3028LPSW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	21A (Tc)	4.5V, 10V	2.4V @ 250µA	22 nC @ 10 V	1421 pF @ 15 V	±20V	-	1.28W (Ta), 2.1W (Tc)	28mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
NVMJST1D2N04CTXG	onsemi	TRENCH 6 40V LFPAK 5X7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 451A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 454W (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-TCPAK Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)	pacote: -	Estoque9.000	MOSFET (Metal Oxide)	40 V	451A (Tc)	10V	4V @ 200µA	82 nC @ 10 V	5340 pF @ 20 V	±20V	-	454W (Tc)	1.25mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	10-TCPAK	10-PowerLSOP (0.209", 5.30mm Width)
2SJ664-E-SY	Sanyo	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOI950A70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 5A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPAK	pacote: -	Estoque10.383	MOSFET (Metal Oxide)	700 V	5A (Tc)	10V	4.1V @ 250µA	10 nC @ 10 V	461 pF @ 100 V	±20V	-	56.5W (Tc)	950mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPAK
TK3A90E-S4X	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacote: -	Estoque129	MOSFET (Metal Oxide)	900 V	2.5A (Ta)	10V	4V @ 250µA	15 nC @ 10 V	650 pF @ 25 V	±30V	-	35W (Tc)	4.6Ohm @ 1.3A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
AUIRFS3107-7TRL	Infineon Technologies	MOSFET N-CH 75V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	pacote: -	Request a Quote	MOSFET (Metal Oxide)	75 V	240A (Tc)	-	4V @ 250µA	240 nC @ 10 V	9200 pF @ 50 V	-	-	370W (Tc)	2.6mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2PAK (6 Leads + Tab)
UPA2719GR-E2-AT	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP22N60AE-BE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: -	Estoque5.838	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 250µA	96 nC @ 10 V	1451 pF @ 100 V	±30V	-	179W (Tc)	180mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDZ372NZ	Fairchild Semiconductor	MOSFET N-CH 20V 4.7A 4WLCSP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (1x1) Package / Case: 4-XFBGA, WLCSP	pacote: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4.7A (Ta)	-	1V @ 250µA	9.8 nC @ 4.5 V	685 pF @ 10 V	-	-	1.7W (Ta)	50mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-WLCSP (1x1)	4-XFBGA, WLCSP
2SJ659-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK9Y1R9-40HX	Nexperia USA Inc.	BUK9Y1R9-40H/SOT669/LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +16V, -10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	120A (Tj)	-	-	-	-	+16V, -10V	-	-	-	-	-	-	-
IXTA1R6N100D2-TRL	IXYS	MOSFET N-CH 1000V 1.6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	1.6A (Tj)	0V	4.5V @ 100µA	27 nC @ 5 V	645 pF @ 25 V	±20V	Depletion Mode	100W (Tc)	10Ohm @ 800mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AO3496	Alpha & Omega Semiconductor Inc.	MOSFET N-CH SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-