Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 33A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.752 |
|
MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | ±20V | - | 57W (Tc) | 31 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH
|
pacote: Die |
Estoque6.160 |
|
MOSFET (Metal Oxide) | 500V | - | - | - | - | - | - | - | - | - | - | - | Die | Die |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 520MA SOT223
|
pacote: TO-261-4, TO-261AA |
Estoque4.192 |
|
MOSFET (Metal Oxide) | 100V | 520mA (Tc) | 5V | 2V @ 1mA | - | 40pF @ 10V | ±20V | - | 6.25W (Tc) | 10 Ohm @ 150mA, 5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 60V 8.4A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque558.192 |
|
MOSFET (Metal Oxide) | 60V | 8.4A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 10V | 450pF @ 25V | ±20V | - | 2W (Ta), 25W (Tc) | 155 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET P-CH 60V 12A TO-220
|
pacote: TO-220-3 |
Estoque1.677.120 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | ±20V | - | 60W (Tc) | 200 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
LOW POWER_LEGACY
|
pacote: - |
Estoque4.864 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 1000V 32A T-MAX
|
pacote: TO-247-3 Variant |
Estoque4.016 |
|
MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | ±30V | - | 1040W (Tc) | 380 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
pacote: 8-PowerTDFN |
Estoque6.704 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 2V @ 35µA | 9.5nC @ 10V | 880pF @ 25V | ±20V | - | 3.6W (Ta), 46W (Tc) | 9.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TSMT6
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque7.184 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 3nC @ 4.5V | 270pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.25W (Ta) | 215 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
ON Semiconductor |
MOSFET N-CH 20V 3.6A SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.968 |
|
MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 17.8nC @ 4.5V | 1540pF @ 16V | ±8V | - | 470mW (Ta) | 24 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6
|
pacote: TO-263-7, D2Pak (6 Leads + Tab) |
Estoque4.096 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5V @ 250µA | 180nC @ 10V | 12800pF @ 25V | ±20V | - | 315W (Tc) | 2.3 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-7, D2Pak (6 Leads + Tab) |
||
IXYS |
MOSFET N-CH 600V 40A SOT-227
|
pacote: SOT-227-4, miniBLOC |
Estoque7.168 |
|
MOSFET (Metal Oxide) | 600V | 40A | 10V | 5.5V @ 8mA | 150nC @ 10V | 8860pF @ 25V | ±30V | - | 625W (Tc) | 140 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 28A TO-220F
|
pacote: TO-220-3 Full Pack |
Estoque7.776 |
|
MOSFET (Metal Oxide) | 200V | 28A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | ±30V | - | 50W (Tc) | 82 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 110A TO263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.672 |
|
MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 4.5V @ 250µA | 253nC @ 10V | 14600pF @ 25V | ±20V | - | 333W (Tc) | 1.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 150V 4.7A 1212-8
|
pacote: PowerPAK? 1212-8 |
Estoque5.344 |
|
MOSFET (Metal Oxide) | 150V | 4.7A (Tc) | 10V | 3.5V @ 250µA | 11nC @ 10V | 385pF @ 75V | ±20V | - | 62.5W (Tc) | 1.095 Ohm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Infineon Technologies |
MOSFET N-CH 60V 84A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque110.508 |
|
MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | ±20V | - | 200W (Tc) | 12 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 30A TO-220F
|
pacote: TO-220-3 Full Pack |
Estoque4.400 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | ±25V | - | 62W (Tc) | 26 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Vishay Siliconix |
P-CHANNEL 30-V (D-S) MOSFET
|
pacote: - |
Estoque55.305 |
|
MOSFET (Metal Oxide) | 30 V | 6.4A (Ta), 8A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 14.5 nC @ 10 V | 580 pF @ 15 V | +16V, -20V | - | 2W (Ta), 3W (Tc) | 31.2mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 8.5A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19 nC @ 4.5 V | 2030 pF @ 25 V | ±20V | - | 2W (Ta), 63W (Tc) | 17mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
onsemi |
MOSFET N-CH 30V 9A/54A DPAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 11 nC @ 4.5 V | 1350 pF @ 12 V | ±20V | - | 1.4W (Ta), 50W (Tc) | 10mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
DISC MOSFET N-CH LINEAR L2 TO-26
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 140A (Tc) | 10V | 4.5V @ 250µA | 275 nC @ 10 V | 9300 pF @ 25 V | ±20V | - | 540W (Tc) | 11mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXTT) | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Vishay Siliconix |
MOSFET N-CH 20V 100A/430A PPAK
|
pacote: - |
Estoque7.323 |
|
MOSFET (Metal Oxide) | 20 V | 100A (Ta), 430A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 310 nC @ 10 V | 12430 pF @ 10 V | +12V, -8V | - | 6.3W (Ta), 104W (Tc) | 0.4mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Vishay Siliconix |
MOSFET N-CH 600V 41A D2PAK
|
pacote: - |
Estoque4.050 |
|
MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 5V @ 250µA | 77 nC @ 10 V | 2628 pF @ 100 V | ±30V | - | 250W (Tc) | 68mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Panjit International Inc. |
650V N-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 7A (Ta) | 10V | 4V @ 250µA | 16.8 nC @ 10 V | 754 pF @ 25 V | ±30V | - | 140W (Tc) | 1.5Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | 11360 pF @ 50 V | ±16V | - | 370W (Tc) | 4.3mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN2015-
|
pacote: - |
Estoque9.000 |
|
MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 9.1 nC @ 4.5 V | 214 pF @ 10 V | ±8V | - | 530mW | 54mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN2015-3 | 3-XDFN |
||
onsemi |
CPH6424 - N-CHANNEL SILICON MOSF
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |