Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 650V TO-220AB
|
pacote: TO-220-3 |
Estoque3.904 |
|
MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 220 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223
|
pacote: TO-261-4, TO-261AA |
Estoque5.152 |
|
MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 2V @ 460µA | 20nC @ 10V | 460pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 100V 17A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.544 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | ±16V | - | 79W (Tc) | 105 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 18A T-MAX
|
pacote: TO-247-3 Variant |
Estoque2.976 |
|
MOSFET (Metal Oxide) | 1200V | 18A (Tc) | 10V | 5V @ 2.5mA | 150nC @ 10V | 4420pF @ 25V | ±30V | - | 565W (Tc) | 670 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
ON Semiconductor |
MOSFET N-CH 40V 21A TP-FA
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque120.012 |
|
MOSFET (Metal Oxide) | 40V | 21A (Ta) | 10V | 2.6V @ 1mA | 14.4nC @ 10V | 715pF @ 20V | ±20V | - | 1W (Ta), 23W (Tc) | 28 mOhm @ 10.5A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 43A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.992 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 175nC @ 20V | 2730pF @ 25V | ±20V | - | 230W (Tc) | 42 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque12.396 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 450pF @ 25V | ±20V | - | 50W (Tc) | 100 mOhm @ 7.5A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
NXP |
MOSFET N-CH 80V 34A QFN3333
|
pacote: 8-VDFN Exposed Pad |
Estoque5.456 |
|
MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 4V @ 1mA | 21nC @ 10V | 1295pF @ 40V | ±20V | - | 65W (Tc) | 23 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
||
IXYS |
MOSFET N-CH 200V 36A TO-247
|
pacote: TO-247-3 |
Estoque7.840 |
|
MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 40V 100A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.072 |
|
MOSFET (Metal Oxide) | 40V | 24A (Ta), 123A (Tc) | 10V | 3.5V @ 250µA | 100nC @ 10V | 4760pF @ 25V | ±20V | - | 4W (Ta), 107W (Tc) | 3.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 30V 52A TO220
|
pacote: TO-220-3 |
Estoque3.408 |
|
MOSFET (Metal Oxide) | 30V | 52A | 4.5V, 10V | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 150V 3.5A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque5.056 |
|
MOSFET (Metal Oxide) | 150V | 3.5A (Ta) | 10V | 2V @ 250µA (Min) | 36nC @ 10V | - | ±20V | - | 1.56W (Ta) | 50 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 500V 82A SOT-227
|
pacote: SOT-227-4, miniBLOC |
Estoque4.416 |
|
MOSFET (Metal Oxide) | 500V | 82A | 10V | 6.5V @ 8mA | 255nC @ 10V | 13800pF @ 25V | ±30V | - | 960W (Tc) | 49 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 1KV 21A PLUS247-3
|
pacote: TO-247-3 |
Estoque103.464 |
|
MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 5.5V @ 4mA | 160nC @ 10V | 5500pF @ 25V | ±20V | - | 500W (Tc) | 500 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET-MX
|
pacote: DirectFET? Isometric MX |
Estoque797.592 |
|
MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | ±20V | - | 2.8W (Ta), 75W (Tc) | 1.8 mOhm @ 32A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
EPC |
TRANS GAN 150V 31A BUMPED DIE
|
pacote: Die |
Estoque14.268 |
|
GaNFET (Gallium Nitride) | 150V | 31A (Ta) | 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | +6V, -4V | - | - | 7 mOhm @ 25A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Diodes Incorporated |
MOSFET N-CH 60V 3A 6-DFN
|
pacote: 6-PowerUFDFN |
Estoque26.880 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4V, 10V | 3V @ 250µA | 12.3nC @ 10V | 606pF @ 20V | ±20V | - | 600mW (Ta) | 85 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1616-6 (Type E) | 6-PowerUFDFN |
||
Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3
|
pacote: 3-SMD, Flat Leads |
Estoque142.440 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.4nC @ 10V | 230pF @ 10V | ±20V | - | 320mW (Ta) | 160 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque27.900 |
|
MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 2.3V @ 13µA | 0.6nC @ 10V | 20.9pF @ 25V | ±20V | - | 500mW (Ta) | 6 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
P-150V,-2.2A,RD(MAX)<310M@-10V,V
|
pacote: - |
Estoque11.049 |
|
MOSFET (Metal Oxide) | 150 V | 2.2A (Tc) | 10V | 3.5V @ 250µA | 11 nC @ 10 V | 966 pF @ 75 V | ±20V | - | 2.5W (Tc) | 310mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 120A LFPAK56
|
pacote: - |
Estoque13.431 |
|
MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 10V | 3.6V @ 1mA | 90.5 nC @ 10 V | 5450 pF @ 25 V | +20V, -10V | - | 217W (Ta) | 2mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
onsemi |
-30V P-CHANNEL POWERTRENCH MOSFE
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 65 nC @ 5 V | 4700 pF @ 15 V | ±25V | - | 1W (Ta) | 7.8mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
PCH -40V -35A POWER MOSFET - RD3
|
pacote: - |
Estoque13.857 |
|
MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 38 nC @ 10 V | 2100 pF @ 20 V | ±20V | - | 56W (Tc) | 19.1mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Goford Semiconductor |
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
|
pacote: - |
Estoque15.084 |
|
MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 24 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 3W (Tc) | 11mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 4A, 150V,
|
pacote: - |
Estoque14.610 |
|
MOSFET (Metal Oxide) | 150 V | 4A (Ta) | 10V | 2.5V @ 250µA | 19 nC @ 10 V | 900 pF @ 25 V | ±20V | - | - | 160mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
TRENCH 40<-<100V
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO251-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27 nC @ 10 V | 790 pF @ 25 V | ±20V | - | 83W (Tc) | 600mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPAK, TO-251AA |
||
Infineon Technologies |
TRENCH 40<-<100V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | 11210 pF @ 50 V | ±16V | - | 380W (Tc) | 2.4mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |