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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  3/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFU2607ZPBF
Infineon Technologies

MOSFET N-CH 75V 42A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque3.872
MOSFET (Metal Oxide)
75V
42A (Tc)
10V
4V @ 50µA
51nC @ 10V
1440pF @ 25V
±20V
-
110W (Tc)
22 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
GP2M005A050HG
Global Power Technologies Group

MOSFET N-CH 500V 4.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 98.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque4.560
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
5V @ 250µA
15nC @ 10V
645pF @ 25V
±30V
-
98.4W (Tc)
1.5 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IRCZ44PBF
Vishay Siliconix

MOSFET N-CH 60V 50A TO-220-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-5
  • Package / Case: TO-220-5
pacote: TO-220-5
Estoque4.592
MOSFET (Metal Oxide)
60V
50A (Tc)
10V
4V @ 250µA
95nC @ 10V
2500pF @ 25V
±20V
Current Sensing
150W (Tc)
28 mOhm @ 31A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-5
TO-220-5
hot IRFZ34STRL
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque36.780
MOSFET (Metal Oxide)
60V
30A (Tc)
10V
4V @ 250µA
46nC @ 10V
1200pF @ 25V
±20V
-
3.7W (Ta), 88W (Tc)
50 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPW35N60CFDFKSA1
Infineon Technologies

MOSFET N-CH 600V 34.1A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 118 mOhm @ 21.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque5.328
MOSFET (Metal Oxide)
600V
34.1A (Tc)
10V
5V @ 1.9mA
212nC @ 10V
5060pF @ 25V
±20V
-
313W (Tc)
118 mOhm @ 21.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IPB65R310CFDAATMA1
Infineon Technologies

MOSFET N-CH TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.432
MOSFET (Metal Oxide)
650V
11.4A (Tc)
10V
4.5V @ 440µA
41nC @ 10V
1110pF @ 100V
±20V
-
104.2W (Tc)
310 mOhm @ 4.4A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP18N55M5
STMicroelectronics

MOSFET N-CH 550V 13A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 192 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque5.984
MOSFET (Metal Oxide)
550V
16A (Tc)
10V
5V @ 250µA
31nC @ 10V
1260pF @ 100V
±25V
-
110W (Tc)
192 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQJQ466E-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 200A POWERPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10210pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 8 x 8
  • Package / Case: PowerPAK? 8 x 8 Single
pacote: PowerPAK? 8 x 8 Single
Estoque3.952
MOSFET (Metal Oxide)
60V
200A (Tc)
10V
3.5V @ 250µA
180nC @ 10V
10210pF @ 25V
±20V
-
150W (Tc)
1.9 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? 8 x 8
PowerPAK? 8 x 8 Single
hot SUD50N02-06P-E3
Vishay Siliconix

MOSFET N-CH 20V 50A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.8W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque214.800
MOSFET (Metal Oxide)
20V
50A (Tc)
4.5V, 10V
3V @ 250µA
30nC @ 4.5V
2550pF @ 10V
±20V
-
6.8W (Ta), 65W (Tc)
6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
GA05JT01-46
GeneSiC Semiconductor

TRANS SJT 100V 9A

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A
  • Operating Temperature: -55°C ~ 225°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-46
  • Package / Case: TO-46-3
pacote: TO-46-3
Estoque6.804
SiC (Silicon Carbide Junction Transistor)
100V
9A (Tc)
-
-
-
-
-
-
20W (Tc)
240 mOhm @ 5A
-55°C ~ 225°C (TJ)
Through Hole
TO-46
TO-46-3
hot FDMS5672
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10.6A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque82.908
MOSFET (Metal Oxide)
60V
10.6A (Ta), 22A (Tc)
6V, 10V
4V @ 250µA
45nC @ 10V
2800pF @ 30V
±20V
-
2.5W (Ta), 78W (Tc)
11.5 mOhm @ 10.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerWDFN
hot SI2319DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 2.3A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 82 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque686.676
MOSFET (Metal Oxide)
40V
2.3A (Ta)
10V
3V @ 250µA
17nC @ 10V
470pF @ 20V
±20V
-
750mW (Ta)
82 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
BUK9620-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 54A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 118W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque33.546
MOSFET (Metal Oxide)
55V
54A (Tc)
4.5V, 10V
2V @ 1mA
-
2210pF @ 25V
±10V
-
118W (Tc)
18 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STW62N65M5
STMicroelectronics

MOSFET N-CH 650V TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.224
MOSFET (Metal Oxide)
650V
46A (Tc)
10V
5V @ 250µA
142nC @ 10V
6420pF @ 100V
±25V
-
330W (Tc)
49 mOhm @ 23A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
MSJAC11N50B-TP
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
500 V
11A
10V
3.5V @ 250µA
21.8 nC @ 10 V
702 pF @ 25 V
±30V
-
83W
380mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
G6P06
Goford Semiconductor

MOSFET P-CH 60V 6A SOP-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Request a Quote
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V, 10V
3V @ 250µA
-
-
±20V
-
4.1W (Tc)
96mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DI015N25D1
Diotec Semiconductor

MOSFET DPAK N 250V 0.2OHM 175C

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 125 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 255mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
250 V
15A (Tc)
10V
4.5V @ 250µA
8.9 nC @ 10 V
475 pF @ 125 V
±20V
-
140W (Tc)
255mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PCF6294W
onsemi

IC MOSFET N-CH 30V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
13A (Tj)
-
-
-
-
-
-
-
-
-
-
-
-
JANSR2N7586T1
Microchip Technology

RH MOSFET 250V TO-254AA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TP65H150G4PS
Transphorm

GAN FET N-CH 650V TO-220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque9.321
GaNFET (Gallium Nitride)
650 V
16A (Tc)
10V
4.8V @ 500µA
8 nC @ 10 V
598 pF @ 400 V
±20V
-
83W (Tc)
180mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDB86569-F085
onsemi

MOSFET N-CH 60V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tj)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
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MOSFET (Metal Oxide)
60 V
80A (Tc)
10V
4V @ 250µA
52 nC @ 10 V
2520 pF @ 30 V
±20V
-
94W (Tj)
5.6mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AOY66923
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 16.5/58A TO251B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251B
  • Package / Case: TO-251-3 Stub Leads, IPAK
pacote: -
Estoque17.565
MOSFET (Metal Oxide)
100 V
16.5A (Ta), 58A (Tc)
4.5V, 10V
2.6V @ 250µA
35 nC @ 10 V
1725 pF @ 50 V
±20V
-
6.2W (Ta), 73W (Tc)
11mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
FCPF260N65FL1-F154
onsemi

MOSFET N-CH 650V 15A TO220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
pacote: -
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MOSFET (Metal Oxide)
650 V
15A (Tc)
-
5V @ 1.5mA
60 nC @ 10 V
2340 pF @ 100 V
±20V
-
36W (Tc)
260mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
RQJ0305EQDQS-H1
Renesas Electronics Corporation

MOSFET P-CH 30V 3.4A UPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
  • Vgs (Max): +8V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UPAK
  • Package / Case: TO-243AA
pacote: -
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MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
1.4V @ 1mA
3 nC @ 4.5 V
330 pF @ 10 V
+8V, -12V
-
1.5W (Ta)
140mOhm @ 1.7A, 4.5V
150°C
Surface Mount
UPAK
TO-243AA
SQM40022E_GE3
Vishay Siliconix

MOSFET N-CH 40V 150A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque2.400
MOSFET (Metal Oxide)
40 V
150A (Tc)
10V
3.5V @ 250µA
160 nC @ 10 V
9200 pF @ 25 V
±20V
-
150W (Tc)
1.63mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK669K
onsemi

N-CHANNEL SMALL SIGNAL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFWS014P04M8LT1G
onsemi

MV8 40V P-CH LL IN S08FL PACKAGE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 420µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: -
Estoque3.066
MOSFET (Metal Oxide)
40 V
12.5A (Ta), 52.1A (Tc)
4.5V, 10V
2.4V @ 420µA
26.5 nC @ 10 V
1734 pF @ 20 V
±20V
-
3.6W (Ta), 60W (Tc)
13.8mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
KFK9B0463ZLE
Nuvoton Technology Corporation

SINGLE NCH MOSFET 40V, 7.5A, 1MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 990µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 9-LGA (3.05x3.05)
  • Package / Case: 9-ULGA
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
40 V
7.5A (Ta)
4.5V, 10V
3V @ 990µA
70 nC @ 10 V
5000 pF @ 20 V
+20V, -10V
-
860mW (Ta)
15mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
9-LGA (3.05x3.05)
9-ULGA