Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.496 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 230W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque7.440 |
|
MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | ±30V | - | 200W (Tc) | 45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 6TSOT
|
pacote: - |
Estoque4.208 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 8.5A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque15.132 |
|
MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 12nC @ 4.5V | 1100pF @ 15V | ±12V | - | 3.1W (Ta) | 24 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET P-CH 100V 11A
|
pacote: TO-204AA, TO-3 |
Estoque2.544 |
|
MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 360 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON
|
pacote: 8-VDFN Exposed Pad |
Estoque3.584 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | ±20V | - | 700mW (Ta), 22W (Tc) | 16.9 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 25V 23A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.552 |
|
MOSFET (Metal Oxide) | 25V | 23A (Ta) | 4.5V, 10V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 37.5W (Tj) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO-220
|
pacote: TO-220-3 |
Estoque103.464 |
|
MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | ±30V | - | 40W (Tc) | 5.8 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 90V 0.01A TO92-3
|
pacote: E-Line-3 |
Estoque6.160 |
|
MOSFET (Metal Oxide) | 90V | 10mA (Ta) | 10V | 2.4V @ 100µA | - | 6.5pF @ 25V | ±20V | - | 625mW (Ta) | 250 Ohm @ 5mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 12A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque933.288 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 2400pF @ 25V | ±16V | - | 2.5W (Ta) | 9 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 40A TO251-3
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque3.312 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 1600pF @ 15V | ±20V | - | 42W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET N-CH 100V 76A TO-220
|
pacote: TO-220-3 |
Estoque12.252 |
|
MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±20V | - | 188W (Tc) | 13 mOhm @ 76A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 20V 7A MCPH6
|
pacote: 6-SMD, Flat Leads |
Estoque69.000 |
|
MOSFET (Metal Oxide) | 20V | 7A (Ta) | 1.8V, 4.5V | - | 8.4nC @ 4.5V | 660pF @ 10V | ±12V | - | 1.5W (Ta) | 24 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
||
ON Semiconductor |
MOSFET P-CH 30V 2.5A CPH3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque4.544 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 1W (Ta) | 156 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 950V 12A TO220
|
pacote: TO-220-3 |
Estoque4.112 |
|
MOSFET (Metal Oxide) | 950V | 12A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 900pF @ 100V | ±30V | - | 170W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT
|
pacote: 8-PowerVDFN |
Estoque3.120 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 5600pF @ 25V | ±20V | - | 188W (Tc) | 1.1 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 60V 50A TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque390.000 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | ±20V | - | 79W (Tc) | 8.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 700V 12.8A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque20.136 |
|
MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8nC @ 10V | 211pF @ 400V | ±16V | - | 30.5W (Tc) | 900 mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V
|
pacote: 8-PowerWDFN |
Estoque6.144 |
|
MOSFET (Metal Oxide) | 30V | 12.5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 1mA | 23nC @ 10V | 1385pF @ 15V | ±20V | - | 2.3W (Ta), 27W (Tc) | 9.3 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 30V 25A PPAK SO-8
|
pacote: PowerPAK? SO-8 |
Estoque110.892 |
|
MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 2070pF @ 15V | +20V, -16V | - | 4.5W (Ta), 31W (Tc) | 4.3 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Rohm Semiconductor |
NCH 30V 80A POWER MOSFET: RS1E35
|
pacote: - |
Estoque7.200 |
|
MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 185 nC @ 10 V | 7900 pF @ 15 V | ±20V | - | 3W (Ta), 35W (Tc) | 1.7mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 60V 9.9A/50A TO252AA
|
pacote: - |
Estoque9.813 |
|
MOSFET (Metal Oxide) | 60 V | 9.9A (Ta), 50A (Tc) | 6V, 10V | 4V @ 250µA | 29 nC @ 10 V | 1350 pF @ 25 V | ±20V | - | 115W (Tc) | 13.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 60V 54A/470A 8HPSOF
|
pacote: - |
Estoque4.146 |
|
MOSFET (Metal Oxide) | 60 V | 54A (Ta), 470A (Tc) | 6V, 10V | 4V @ 661µA | 170 nC @ 10 V | 13730 pF @ 30 V | ±20V | - | 4.2W (Ta), 314W (Tc) | 0.75mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A 8SOP
|
pacote: - |
Estoque58.608 |
|
MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 2.5V @ 500µA | 65 nC @ 10 V | 4180 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 3.2mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Micro Commercial Co |
Interface
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 35A | 4.5V, 10V | 2.5V @ 250µA | 46.7 nC @ 10 V | 1860 pF @ 20 V | ±20V | - | 40W | 8mOhm @ 20A, 10V | -55°C ~ 150°C | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
650V DTMOS6 HSD 42MOHM TO-247
|
pacote: - |
Estoque630 |
|
MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | 6280 pF @ 300 V | ±30V | - | 360W (Tc) | 42mOhm @ 27.5A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 28A PPAK 8 X 8
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 5V @ 250µA | 53 nC @ 10 V | 1850 pF @ 100 V | ±30V | - | 174W (Tc) | 100mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 17A (Tc) | 10V | 4.9V @ 50µA | 20 nC @ 10 V | 800 pF @ 50 V | ±20V | - | 80W (Tj) | 95mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ANBON SEMICONDUCTOR (INT'L) LIMITED |
N-CHANNEL SILICON CARBIDE POWER
|
pacote: - |
Estoque150 |
|
SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 4V @ 10mA | 142 nC @ 20 V | 2946 pF @ 1000 V | +25V, -10V | - | 330W (Tc) | 55mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Panjit International Inc. |
500V N-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 8A (Ta) | 10V | 4V @ 250µA | 16.2 nC @ 10 V | 826 pF @ 25 V | ±30V | - | 130W (Tc) | 900mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |