Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 500V 4.3A PG-T0252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.704 |
|
MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | ±20V | - | 53W (Tc) | 950 mOhm @ 1.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3
|
pacote: TO-220-3 |
Estoque3.296 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 90µA | 128nC @ 10V | 10400pF @ 25V | ±20V | - | 150W (Tc) | 4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 30A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.552 |
|
MOSFET (Metal Oxide) | 40V | 30A (Tc) | 10V | 4V @ 250µA | 71nC @ 10V | 2150pF @ 25V | ±20V | - | 140W (Tc) | 9.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 75V 80A TO-220
|
pacote: TO-220-3 |
Estoque108.132 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 6130pF @ 25V | ±20V | - | 300W (Tc) | 7.4 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 100A TO-220
|
pacote: TO-220-3 |
Estoque12.420 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 270µA | 167nC @ 10V | 6100pF @ 30V | ±20V | - | 300W (Tc) | 5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 6.5A TSOP-6
|
pacote: SOT-23-6 |
Estoque5.808 |
|
MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | ±12V | - | 2W (Ta) | 30 mOhm @ 6.5A, 4.5V | - | Surface Mount | Micro6?(SOT23-6) | SOT-23-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 9.5A 8DFN
|
pacote: 8-PowerSMD, Flat Leads |
Estoque7.248 |
|
MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 24A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 10V | 660pF @ 15V | ±20V | - | 3.1W (Ta), 20W (Tc) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
IXYS |
MOSFET N-CH 500V 44A SOT-227B
|
pacote: SOT-227-4, miniBLOC |
Estoque7.920 |
|
MOSFET (Metal Oxide) | 500V | 44A | 10V | 4V @ 8mA | 270nC @ 10V | 8400pF @ 25V | ±20V | - | 520W (Tc) | 120 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 7.6A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque5.232 |
|
MOSFET (Metal Oxide) | 200V | 7.6A (Tc) | 5V, 10V | 2V @ 250µA | 17nC @ 5V | 830pF @ 25V | ±20V | - | 2.5W (Ta), 51W (Tc) | 360 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Diodes Incorporated |
MOSFET P-CH 200V 0.12A TO92-3
|
pacote: TO-226-3, TO-92-3 (TO-226AA) |
Estoque4.976 |
|
MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 25 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH 55V 27A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.304 |
|
MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 68W (Tc) | 45 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 300V 88A TO-268
|
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Estoque6.592 |
|
MOSFET (Metal Oxide) | 300V | 88A (Tc) | 10V | 5V @ 250µA | 180nC @ 10V | 6300pF @ 25V | ±20V | - | 600W (Tc) | 40 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
ON Semiconductor |
MOSFET N-CH 40V 48A SO8FL
|
pacote: 8-PowerTDFN |
Estoque2.128 |
|
MOSFET (Metal Oxide) | 40V | 48A (Ta), 315A (Tc) | 4.5V, 10V | 2V @ 250µA | 143nC @ 10V | 8862pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.9 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 50V 0.3A SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque4.624 |
|
MOSFET (Metal Oxide) | 50V | 300mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.6nC @ 4.5V | 37.1pF @ 25V | ±12V | - | 520mW (Ta) | 2 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
pacote: TO-220-3 |
Estoque5.536 |
|
MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 4.5V @ 250µA | 18.3nC @ 10V | 872pF @ 25V | ±30V | - | 40W (Tc) | 1.6 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 1A 3DFN
|
pacote: 3-XFDFN |
Estoque5.056 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | 83pF @ 10V | ±8V | - | 360mW (Ta), 2.7W (Tc) | 380 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006B (0.6x1) | 3-XFDFN |
||
IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.704 |
|
MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4V @ 250µA | 136nC @ 10V | 8500pF @ 25V | ±20V | - | 440W (Tc) | 4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO-220-3
|
pacote: TO-220-3 Full Pack |
Estoque14.652 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 250µA | 52.3nC @ 10V | 2170pF @ 100V | ±30V | - | 35.7W (Tc) | 199 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB
|
pacote: TO-220-3 |
Estoque89.208 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET P-CH 60V 300MA SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque123.588 |
|
MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 1V @ 1mA (Min) | 3nC @ 10V | 70pF @ 48V | ±20V | - | 417mW (Ta) | 2.5 Ohm @ 160mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET N-CH 500V 16A TO3P
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 5V @ 250µA | 75 nC @ 10 V | 3000 pF @ 25 V | ±30V | - | 200W (Tc) | 320mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 18A PPAK1212-8
|
pacote: - |
Estoque18.312 |
|
MOSFET (Metal Oxide) | 30 V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 93 nC @ 10 V | 3600 pF @ 15 V | ±25V | - | 52W (Tc) | 9.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
|
pacote: - |
Estoque15.486 |
|
MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 29.8mOhm @ 3A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Renesas Electronics Corporation |
5A, 60V, N-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 146A 8DFN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 146A | 10V | 1.8V @ 250µA | 60 nC @ 10 V | 3860 pF @ 15 V | ±20V | Schottky Diode (Body) | 57W (Tc) | 1.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -4.2A, -30
|
pacote: - |
Estoque17.340 |
|
MOSFET (Metal Oxide) | 30 V | 4.2A | 2.5V, 10V | 1.3V @ 250µA | 18 nC @ 10 V | 712 pF @ 15 V | ±12V | - | 1.4W | 50mOhm @ 4.2A, 10V | -55°C ~ 150°C | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Diotec Semiconductor |
MOSFET, D2PAK, 60V, 110A, 150C,
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 4V @ 250µA | 75 nC @ 10 V | 4597 pF @ 25 V | ±20V | - | 62.5W (Tc) | 3.2mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |