Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.928 |
|
MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 5V @ 100µA | 38nC @ 10V | 1647pF @ 75V | ±20V | - | 2.5W (Ta) | 43 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 61A I-PAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque4.752 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | - | 87W (Tc) | 13 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 179A SUPER-220
|
pacote: Super-220?-3 (Straight Leads) |
Estoque4.992 |
|
MOSFET (Metal Oxide) | 30V | 179A (Tc) | - | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | - | - | 270W (Tc) | 5 mOhm @ 71A, 10V | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220? (TO-273AA) | Super-220?-3 (Straight Leads) |
||
Infineon Technologies |
MOSFET N-CH 55V 49A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.424 |
|
MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | ±20V | - | 3.8W (Ta), 94W (Tc) | 17.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.376 |
|
MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | ±20V | - | 50W (Tc) | 7 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.320 |
|
MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 3W (Ta), 125W (Tc) | 500 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 200V 417A SP6
|
pacote: SP6 |
Estoque7.584 |
|
MOSFET (Metal Oxide) | 200V | 417A | 10V | 5V @ 10mA | 560nC @ 10V | 28800pF @ 25V | ±30V | - | 1560W (Tc) | 5 mOhm @ 208.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Vishay Siliconix |
MOSFET N-CH 60V 93A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.208 |
|
MOSFET (Metal Oxide) | 60V | 93A (Tc) | 10V | 4.5V @ 250µA | 145nC @ 10V | 7000pF @ 25V | ±20V | - | 3W (Ta), 136W (Tc) | 7.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque13.200 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 125nC @ 10V | 5370pF @ 15V | ±20V | - | 3W (Ta), 6W (Tc) | 3.3 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 30V 6.4A PPAK 1212-8
|
pacote: PowerPAK? 1212-8 |
Estoque4.144 |
|
MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 40nC @ 10V | - | ±20V | - | 1.5W (Ta) | 25 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 2A SOT363
|
pacote: 6-TSSOP, SC-88, SOT-363 |
Estoque7.232 |
|
MOSFET (Metal Oxide) | 20V | 2A (Tj) | 2.5V, 4.5V | 1.15V @ 250µA | 7.2nC @ 4.5V | 560pF @ 10V | ±12V | - | 375mW (Ta), 2.4W (Tc) | 115 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP | 6-TSSOP, SC-88, SOT-363 |
||
IXYS |
MOSFET N-CH 500V 22A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque73.992 |
|
MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 5.5V @ 250µA | 50nC @ 10V | 2630pF @ 25V | ±30V | - | 350W (Tc) | 270 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Microchip Technology |
MOSFET N-CH 25V 8PDFN
|
pacote: 8-PowerTDFN |
Estoque6.960 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.6V @ 250µA | 15nC @ 4.5V | 1040pF @ 12.5V | +10V, -8V | - | 2.2W (Ta) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 10A 8-HSMT
|
pacote: 8-PowerVDFN |
Estoque6.848 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 7.9nC @ 10V | 420pF @ 15V | ±20V | - | 2W (Ta), 15W (Tc) | 11.7 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 18A HSMR8
|
pacote: 8-PowerVDFN |
Estoque4.224 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 30A (Tc) | 2.5V, 4.5V | 1.5V @ 11mA | 39nC @ 4.5V | 4290pF @ 15V | ±12V | - | 2W (Ta), 30W (Tc) | 4.5 mOhm @ 18A, 4.5V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 4A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque150.360 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | ±30V | - | 70W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET P-CH 20V 1A TUMT5
|
pacote: 6-SMD (5 Leads), Flat Lead |
Estoque98.904 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | ±12V | Schottky Diode (Isolated) | 1W (Ta) | 390 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | TUMT5 | 6-SMD (5 Leads), Flat Lead |
||
Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB
|
pacote: TO-220-3 |
Estoque60.000 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1200pF @ 25V | ±20V | - | 88W (Tc) | 50 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
NTHL041N60S5H
|
pacote: - |
Estoque498 |
|
MOSFET (Metal Oxide) | 600 V | 57A (Tc) | 10V | 4.3V @ 6.7mA | 108 nC @ 10 V | 5840 pF @ 400 V | ±30V | - | 329W (Tc) | 41mOhm @ 28.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Goford Semiconductor |
N60V, 35A,RD<13M@10V,VTH1.0V~2.4
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 75 nC @ 10 V | 30006 pF @ 30 V | ±20V | - | 44W (Tc) | 13mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 35 nC @ 4.5 V | 4305 pF @ 25 V | ±20V | - | 1.7W (Ta) | 2.4mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET N-CH 800V 1A TO252
|
pacote: - |
Estoque7.311 |
|
MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 5.5V @ 1mA | 7.2 nC @ 10 V | 60 pF @ 25 V | ±30V | - | 36W (Tc) | 8.7Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 500V 22A TO3PN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 5V @ 250µA | 59.5 nC @ 10 V | 3120 pF @ 25 V | ±30V | - | 280W (Tc) | 230mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque8.838 |
|
MOSFET (Metal Oxide) | 60 V | 5.5A (Ta), 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20 nC @ 10 V | 1173 pF @ 25 V | ±20V | - | 2W (Ta), 40W (Tc) | 34mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
IXYS |
MOSFET N-CH 100V 140A TO268
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V, 15V | 5V @ 250µA | 155 nC @ 10 V | 4700 pF @ 25 V | ±20V | - | 600W (Tc) | 11mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Taiwan Semiconductor Corporation |
800V, 5.5A, SINGLE N-CHANNEL POW
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 4V @ 250µA | 19.4 nC @ 10 V | 685 pF @ 100 V | ±30V | - | 110W (Tc) | 1.2Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
MOSLEADER |
N 20V 6.8A SOT23
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
PTNG 100V LL LFPAK4
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 8.4A (Ta), 31A (Tc) | 4.5V, 10V | 3V @ 42µA | 13 nC @ 10 V | 850 pF @ 50 V | ±20V | - | 3.6W (Ta), 49W (Tc) | 23mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
||
Vishay Siliconix |
P-CHANNEL 20-V (D-S) MOSFET
|
pacote: - |
Estoque35.937 |
|
MOSFET (Metal Oxide) | 20 V | 4A (Ta), 4A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 30 nC @ 8 V | 970 pF @ 10 V | ±12V | - | 1.7W (Ta), 2.7W (Tc) | 47mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Littelfuse Inc. |
SICFET N-CH 1700V 750OHM TO247-3
|
pacote: - |
Estoque411 |
|
SiCFET (Silicon Carbide) | 1700 V | 6.2A (Tc) | 20V | 4V @ 1mA | 13 nC @ 20 V | 200 pF @ 1000 V | +22V, -6V | - | 60W (Tc) | 1Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 |