Página 1476 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos

TK50E06K3(S1SS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 50A TO-220AB

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

pacote: TO-220-3

Estoque3.248

-

Through Hole

TO-220-3

SUP65P04-15-E3

Vishay Siliconix

MOSFET P-CH 40V 65A TO220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: TO-220-3

Estoque31.488

MOSFET (Metal Oxide)

40V

65A (Tc)

4.5V, 10V

3V @ 250µA

130nC @ 10V

5400pF @ 25V

±20V

-

3.75W (Ta), 120W (Tc)

15 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

AOD452

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 55A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1476pF @ 12.5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 51.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque185.196

MOSFET (Metal Oxide)

25V

55A (Tc)

4.5V, 10V

3V @ 250µA

32nC @ 10V

1476pF @ 12.5V

±20V

-

2.5W (Ta), 51.5W (Tc)

8.5 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

IXKH30N60C5

IXYS

MOSFET N-CH 600V 30A TO247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXKH)
Package / Case: TO-3P-3 Full Pack

pacote: TO-3P-3 Full Pack

Estoque5.104

MOSFET (Metal Oxide)

600V

30A (Tc)

10V

3.5V @ 1.1mA

70nC @ 10V

2500pF @ 10V

±20V

Super Junction

-

125 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD (IXKH)

TO-3P-3 Full Pack

IXFB110N60P3

IXYS

MOSFET N-CH 600V 110A PLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1890W (Tc)
Rds On (Max) @ Id, Vgs: 56 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264?
Package / Case: TO-264-3, TO-264AA

pacote: TO-264-3, TO-264AA

Estoque5.824

MOSFET (Metal Oxide)

600V

110A (Tc)

10V

5V @ 8mA

245nC @ 10V

18000pF @ 25V

±30V

-

1890W (Tc)

56 mOhm @ 55A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS264?

TO-264-3, TO-264AA

BUK763R1-60E,118

Nexperia USA Inc.

MOSFET N-CH 60V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque2.832

MOSFET (Metal Oxide)

60V

120A (Tc)

10V

4V @ 1mA

114nC @ 10V

8920pF @ 25V

±20V

-

293W (Tc)

3.1 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB120N04S402ATMA1

Infineon Technologies

MOSFET N-CH 40V 120A TO263-3-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10740pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque4.960

MOSFET (Metal Oxide)

40V

120A (Tc)

10V

4V @ 110µA

134nC @ 10V

10740pF @ 25V

±20V

-

158W (Tc)

1.8 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DMTH6004SCTB-13

Diodes Incorporated

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque6.448

MOSFET (Metal Oxide)

60V

100A (Tc)

10V

4V @ 250µA

95.4nC @ 10V

4556pF @ 30V

±20V

-

4.7W (Ta), 136W (Tc)

3.4 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263AB

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFT52N50P2

IXYS

MOSFET N-CH 500V 52A TO268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Estoque4.912

MOSFET (Metal Oxide)

500V

52A (Tc)

10V

4.5V @ 4mA

113nC @ 10V

6800pF @ 25V

±30V

-

960W (Tc)

120 mOhm @ 26A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SI2303CDS-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 2.7A SOT23-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

Estoque2.194.800

MOSFET (Metal Oxide)

30V

2.7A (Tc)

4.5V, 10V

3V @ 250µA

8nC @ 10V

155pF @ 15V

±20V

-

1W (Ta), 2.3W (Tc)

190 mOhm @ 1.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

IRFI4321PBF

Infineon Technologies

MOSFET N-CH 150V 34A TO-220AB FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 50V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack

pacote: TO-220-3 Full Pack

Estoque9.228

MOSFET (Metal Oxide)

150V

34A (Tc)

10V

5V @ 250µA

110nC @ 10V

4440pF @ 50V

±30V

-

46W (Tc)

16 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB Full-Pak

TO-220-3 Full Pack

IRFP460APBF

Vishay Siliconix

MOSFET N-CH 500V 20A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: TO-247-3

Estoque13.644

MOSFET (Metal Oxide)

500V

20A (Tc)

10V

4V @ 250µA

105nC @ 10V

3100pF @ 25V

±30V

-

280W (Tc)

270 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

SUP90330E-GE3

Vishay Siliconix

MOSFET N-CH 200V 35.8A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: -

Request a Quote

MOSFET (Metal Oxide)

200 V

35.8A (Tc)

7.5V, 10V

4V @ 250µA

32 nC @ 10 V

1172 pF @ 100 V

±20V

-

125W (Tc)

37.5mOhm @ 12.2A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

BSC005N03LS5IATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 433A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacote: -

Estoque13.329

MOSFET (Metal Oxide)

30 V

42A (Ta), 433A (Tc)

4.5V, 10V

2V @ 10mA

128 nC @ 10 V

8000 pF @ 15 V

±20V

-

3W (Ta), 188W (Tc)

0.55mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

2SK1459LS

onsemi

N-CHANNEL SILICON MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 20 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220FI(LS)
Package / Case: TO-220-3 Full Pack

pacote: -

Request a Quote

MOSFET (Metal Oxide)

900 V

2.5A (Ta)

10V

3V @ 1mA

-

350 pF @ 20 V

±30V

-

2W (Ta), 30W (Tc)

6Ohm @ 1.5A, 10V

150°C

Through Hole

TO-220FI(LS)

TO-220-3 Full Pack

FDM6296-G

onsemi

FDM6296 - TBD_25CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

IXTA26P20P-TRL

IXYS

MOSFET P-CH 200V 26A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Estoque3.702

MOSFET (Metal Oxide)

200 V

26A (Tc)

10V

4V @ 250µA

56 nC @ 10 V

2740 pF @ 25 V

±20V

-

300W (Tc)

170mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PH6030DLBX

Nexperia USA Inc.

MOSFET N-CH 30V LFPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

NVMFS6H800NLWFT1G

onsemi

MOSFET N-CH 80V 30A/224A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case: 8-PowerTDFN, 5 Leads

pacote: -

Request a Quote

MOSFET (Metal Oxide)

80 V

30A (Ta), 224A (Tc)

4.5V, 10V

2V @ 330µA

112 nC @ 10 V

6900 pF @ 40 V

±20V

-

3.9W (Ta), 214W (Tc)

1.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

5-DFNW (4.9x5.9) (8-SOFL-WF)

8-PowerTDFN, 5 Leads

S2N7002ET7G

onsemi

DIODE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

SIS108DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 6.7A/16A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

pacote: -

Estoque15.000

MOSFET (Metal Oxide)

80 V

6.7A (Ta), 16A (Tc)

7.5V, 10V

4V @ 250µA

13 nC @ 10 V

545 pF @ 40 V

±20V

-

3.2W (Ta), 24W (Tc)

34mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8

2SK1526-E

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450 V
Current - Continuous Drain (Id) @ 25°C: 40A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 150mOhm @ 20A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-3PL
Package / Case: TO-3P-3, SC-65-3

pacote: -

Request a Quote

MOSFET (Metal Oxide)

450 V

40A

10V

3V @ 1mA

-

5800 pF @ 10 V

±30V

-

150mOhm @ 20A, 10V

150°C

Through Hole

TO-3PL

TO-3P-3, SC-65-3

SPA07N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

pacote: -

Estoque1.449

MOSFET (Metal Oxide)

650 V

7.3A (Tc)

10V

3.9V @ 250µA

27 nC @ 10 V

790 pF @ 25 V

±20V

-

32W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

IPF016N10NF2SATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacote: -

Request a Quote

MOSFET (Metal Oxide)

100 V

274A (Tc)

6V, 10V

3.8V @ 267µA

241 nC @ 10 V

11000 pF @ 50 V

±20V

-

300W (Tc)

1.6mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-14

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

NTNS3C94NZT5G

onsemi

MOSFET N-CHANNEL 12V 384MA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 384mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 9.6 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 120mW (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 100mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-XLLGA (0.62x0.62)
Package / Case: 3-XFDFN

pacote: -

Request a Quote

MOSFET (Metal Oxide)

12 V

384mA (Ta)

1.5V, 4.5V

1V @ 250µA

0.6 nC @ 4.5 V

35 pF @ 9.6 V

±8V

-

120mW (Ta)

480mOhm @ 100mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

3-XLLGA (0.62x0.62)

3-XFDFN

IXTH120N20X4

IXYS

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

pacote: -

Estoque900

MOSFET (Metal Oxide)

200 V

120A (Tc)

10V

4.5V @ 250µA

108 nC @ 10 V

6100 pF @ 25 V

±20V

-

417W (Tc)

9.5mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

QM2415K-ML

MOSLEADER

Single P -20V -2.4A SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

2SJ143-AZ

Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
TK50E06K3(S1SS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	pacote: TO-220-3	Estoque3.248	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3
SUP65P04-15-E3	Vishay Siliconix	MOSFET P-CH 40V 65A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: TO-220-3	Estoque31.488	MOSFET (Metal Oxide)	40V	65A (Tc)	4.5V, 10V	3V @ 250µA	130nC @ 10V	5400pF @ 25V	±20V	-	3.75W (Ta), 120W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOD452	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 25V 55A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1476pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 51.5W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque185.196	MOSFET (Metal Oxide)	25V	55A (Tc)	4.5V, 10V	3V @ 250µA	32nC @ 10V	1476pF @ 12.5V	±20V	-	2.5W (Ta), 51.5W (Tc)	8.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXKH30N60C5	IXYS	MOSFET N-CH 600V 30A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXKH) Package / Case: TO-3P-3 Full Pack	pacote: TO-3P-3 Full Pack	Estoque5.104	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	3.5V @ 1.1mA	70nC @ 10V	2500pF @ 10V	±20V	Super Junction	-	125 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXKH)	TO-3P-3 Full Pack
IXFB110N60P3	IXYS	MOSFET N-CH 600V 110A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1890W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	pacote: TO-264-3, TO-264AA	Estoque5.824	MOSFET (Metal Oxide)	600V	110A (Tc)	10V	5V @ 8mA	245nC @ 10V	18000pF @ 25V	±30V	-	1890W (Tc)	56 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
BUK763R1-60E,118	Nexperia USA Inc.	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque2.832	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 1mA	114nC @ 10V	8920pF @ 25V	±20V	-	293W (Tc)	3.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB120N04S402ATMA1	Infineon Technologies	MOSFET N-CH 40V 120A TO263-3-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque4.960	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 110µA	134nC @ 10V	10740pF @ 25V	±20V	-	158W (Tc)	1.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMTH6004SCTB-13	Diodes Incorporated	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque6.448	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 250µA	95.4nC @ 10V	4556pF @ 30V	±20V	-	4.7W (Ta), 136W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFT52N50P2	IXYS	MOSFET N-CH 500V 52A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Estoque4.912	MOSFET (Metal Oxide)	500V	52A (Tc)	10V	4.5V @ 4mA	113nC @ 10V	6800pF @ 25V	±30V	-	960W (Tc)	120 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
SI2303CDS-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 2.7A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	pacote: TO-236-3, SC-59, SOT-23-3	Estoque2.194.800	MOSFET (Metal Oxide)	30V	2.7A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 10V	155pF @ 15V	±20V	-	1W (Ta), 2.3W (Tc)	190 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFI4321PBF	Infineon Technologies	MOSFET N-CH 150V 34A TO-220AB FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	pacote: TO-220-3 Full Pack	Estoque9.228	MOSFET (Metal Oxide)	150V	34A (Tc)	10V	5V @ 250µA	110nC @ 10V	4440pF @ 50V	±30V	-	46W (Tc)	16 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFP460APBF	Vishay Siliconix	MOSFET N-CH 500V 20A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: TO-247-3	Estoque13.644	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	4V @ 250µA	105nC @ 10V	3100pF @ 25V	±30V	-	280W (Tc)	270 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SUP90330E-GE3	Vishay Siliconix	MOSFET N-CH 200V 35.8A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	200 V	35.8A (Tc)	7.5V, 10V	4V @ 250µA	32 nC @ 10 V	1172 pF @ 100 V	±20V	-	125W (Tc)	37.5mOhm @ 12.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSC005N03LS5IATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 433A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacote: -	Estoque13.329	MOSFET (Metal Oxide)	30 V	42A (Ta), 433A (Tc)	4.5V, 10V	2V @ 10mA	128 nC @ 10 V	8000 pF @ 15 V	±20V	-	3W (Ta), 188W (Tc)	0.55mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
2SK1459LS	onsemi	N-CHANNEL SILICON MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 20 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote	MOSFET (Metal Oxide)	900 V	2.5A (Ta)	10V	3V @ 1mA	-	350 pF @ 20 V	±30V	-	2W (Ta), 30W (Tc)	6Ohm @ 1.5A, 10V	150°C	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack
FDM6296-G	onsemi	FDM6296 - TBD_25CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA26P20P-TRL	IXYS	MOSFET P-CH 200V 26A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque3.702	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	4V @ 250µA	56 nC @ 10 V	2740 pF @ 25 V	±20V	-	300W (Tc)	170mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PH6030DLBX	Nexperia USA Inc.	MOSFET N-CH 30V LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS6H800NLWFT1G	onsemi	MOSFET N-CH 80V 30A/224A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 330µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	pacote: -	Request a Quote	MOSFET (Metal Oxide)	80 V	30A (Ta), 224A (Tc)	4.5V, 10V	2V @ 330µA	112 nC @ 10 V	6900 pF @ 40 V	±20V	-	3.9W (Ta), 214W (Tc)	1.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
S2N7002ET7G	onsemi	DIODE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIS108DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 6.7A/16A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	pacote: -	Estoque15.000	MOSFET (Metal Oxide)	80 V	6.7A (Ta), 16A (Tc)	7.5V, 10V	4V @ 250µA	13 nC @ 10 V	545 pF @ 40 V	±20V	-	3.2W (Ta), 24W (Tc)	34mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
2SK1526-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150mOhm @ 20A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-3PL Package / Case: TO-3P-3, SC-65-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	450 V	40A	10V	3V @ 1mA	-	5800 pF @ 10 V	±30V	-	-	150mOhm @ 20A, 10V	150°C	Through Hole	TO-3PL	TO-3P-3, SC-65-3
SPA07N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	pacote: -	Estoque1.449	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	3.9V @ 250µA	27 nC @ 10 V	790 pF @ 25 V	±20V	-	32W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IPF016N10NF2SATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 267µA Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	274A (Tc)	6V, 10V	3.8V @ 267µA	241 nC @ 10 V	11000 pF @ 50 V	±20V	-	300W (Tc)	1.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTNS3C94NZT5G	onsemi	MOSFET N-CHANNEL 12V 384MA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 384mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 9.6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 120mW (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-XLLGA (0.62x0.62) Package / Case: 3-XFDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	12 V	384mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.6 nC @ 4.5 V	35 pF @ 9.6 V	±8V	-	120mW (Ta)	480mOhm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-XLLGA (0.62x0.62)	3-XFDFN
IXTH120N20X4	IXYS	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	pacote: -	Estoque900	MOSFET (Metal Oxide)	200 V	120A (Tc)	10V	4.5V @ 250µA	108 nC @ 10 V	6100 pF @ 25 V	±20V	-	417W (Tc)	9.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
QM2415K-ML	MOSLEADER	Single P -20V -2.4A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ143-AZ	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-