Página 1432 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  1.432/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NP89N04MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 89A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque4.320
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
5850pF @ 25V
±20V
-
1.8W (Ta), 147W (Tc)
3.3 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-220
TO-220-3 Full Pack
hot SCH1333-TL-H
ON Semiconductor

MOSFET P-CH 20V 2A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
pacote: SOT-563, SOT-666
Estoque660.000
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
-
3.3nC @ 4.5V
250pF @ 10V
±10V
-
800mW (Ta)
130 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
hot SI1406DH-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 3.1A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque2.682.012
MOSFET (Metal Oxide)
20V
3.1A (Ta)
1.8V, 4.5V
1.2V @ 250µA
7.5nC @ 4.5V
-
±8V
-
1W (Ta)
65 mOhm @ 3.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
2SK4065-E
ON Semiconductor

MOSFET N-CH 75V 100A SMP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SMP
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque3.920
MOSFET (Metal Oxide)
75V
100A (Ta)
4V, 10V
-
220nC @ 10V
12200pF @ 20V
±20V
-
1.65W (Ta), 90W (Tc)
6 mOhm @ 50A, 10V
150°C (TJ)
Through Hole
SMP
TO-220-3, Short Tab
BUK653R5-55C,127
NXP

MOSFET N-CH 55V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 191nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11516pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque7.952
MOSFET (Metal Oxide)
55V
120A (Tc)
4.5V, 10V
2.8V @ 1mA
191nC @ 10V
11516pF @ 25V
±16V
-
263W (Tc)
3.9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF614STRL
Vishay Siliconix

MOSFET N-CH 250V 2.7A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.608
MOSFET (Metal Oxide)
250V
2.7A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
140pF @ 25V
±20V
-
3.1W (Ta), 36W (Tc)
2 Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFR32N80P
IXYS

MOSFET N-CH 800V 20A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
pacote: ISOPLUS247?
Estoque3.472
MOSFET (Metal Oxide)
800V
20A (Tc)
10V
5V @ 8mA
150nC @ 10V
8800pF @ 25V
±30V
-
300W (Tc)
290 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
RJK1003DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 100V 50A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.376
MOSFET (Metal Oxide)
100V
50A (Ta)
10V
-
59nC @ 10V
4150pF @ 10V
±20V
-
25W (Tc)
11 mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
NVMFS5C442NWFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacote: 8-PowerTDFN
Estoque2.112
MOSFET (Metal Oxide)
40V
-
10V
4V @ 250µA
32nC @ 10V
2100pF @ 25V
±20V
-
3.7W (Ta), 83W (Tc)
2.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
AOWF9N70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 9A TO262F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque2.528
MOSFET (Metal Oxide)
700V
9A (Tc)
10V
4.5V @ 250µA
35nC @ 10V
1630pF @ 25V
±30V
-
28W (Tc)
1.2 Ohm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
-
TO-262-3 Long Leads, I2Pak, TO-262AA
DMN62D0UW-13
Diodes Incorporated

MOSFET N-CH 60V 0.34A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacote: SC-70, SOT-323
Estoque2.400
MOSFET (Metal Oxide)
60V
340mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.5nC @ 4.5V
32pF @ 30V
±20V
-
320mW (Ta)
2 Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
hot STW42N65M5
STMicroelectronics

MOSFET N-CH 650V 33A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque425.028
MOSFET (Metal Oxide)
650V
33A (Tc)
10V
5V @ 250µA
100nC @ 10V
4650pF @ 100V
±25V
-
190W (Tc)
79 mOhm @ 16.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
NTTFS5C453NLTAG
ON Semiconductor

MOSFET N-CH 40V 23A WDFN8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 63µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque2.432
MOSFET (Metal Oxide)
40V
23A (Ta), 107A (Tc)
4.5V, 10V
2V @ 63µA
35nC @ 10V
2100pF @ 25V
±20V
-
3.3W (Ta), 68W (Tc)
3 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
PHP191NQ06LT,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7665pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque34.176
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
2V @ 1mA
95.6nC @ 5V
7665pF @ 25V
±15V
-
300W (Tc)
3.7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot DN3545N8-G
Microchip Technology

MOSFET N-CH 450V 0.2A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacote: TO-243AA
Estoque14.700
MOSFET (Metal Oxide)
450V
200mA (Tj)
0V
-
-
360pF @ 25V
±20V
Depletion Mode
1.6W (Ta)
20 Ohm @ 150mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
DMN1019USN-13
Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2426pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 680mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque222.576
MOSFET (Metal Oxide)
12V
9.3A (Ta)
1.2V, 2.5V
800mV @ 250µA
50.6nC @ 8V
2426pF @ 10V
±8V
-
680mW (Ta)
10 mOhm @ 9.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-59
TO-236-3, SC-59, SOT-23-3
DMP1070UCA3-7A
Diodes Incorporated

MOSFET P-CH 12V 3.6A X4DSN0607-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 0.95V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.45 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 147 pF @ 6 V
  • Vgs (Max): -6V
  • FET Feature: -
  • Power Dissipation (Max): 710mW
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X4-DSN0607-3
  • Package / Case: 3-XFDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
12 V
3.6A (Ta)
1.5V, 4.5V
0.95V @ 250µA
1.45 nC @ 4.5 V
147 pF @ 6 V
-6V
-
710mW
70mOhm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X4-DSN0607-3
3-XFDFN
PSMP061-60YEX
Nexperia USA Inc.

PSMP061-60YE/SOT669/LFPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Ta)
  • Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacote: -
Estoque3.999
MOSFET (Metal Oxide)
60 V
25A (Ta)
4.5V, 10V
3V @ 250µA
30 nC @ 10 V
1060 pF @ 30 V
±20V
-
66W (Ta)
61mOhm @ 4.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
NVD5C454NLT4G
onsemi

MOSFET N-CH 40V 20A/84A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
40 V
20A (Ta), 84A (Tc)
4.5V, 10V
2.2V @ 70µA
43 nC @ 10 V
2600 pF @ 25 V
±20V
-
3.1W (Ta), 56W (Tc)
3.9mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHP22N60EL-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
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MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
5V @ 250µA
74 nC @ 10 V
1690 pF @ 100 V
±30V
-
227W (Tc)
197mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
GSFP1040
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 40A, 100V,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PPAK (5.1x5.71)
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque18.000
MOSFET (Metal Oxide)
100 V
40A (Tc)
10V
4V @ 250µA
18 nC @ 10 V
1300 pF @ 50 V
±20V
-
83W (Tc)
18mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PPAK (5.1x5.71)
8-PowerTDFN
IXFT150N30X3HV
IXYS

MOSFET N-CH 300V 150A TO268HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXFT)
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacote: -
Estoque2.265
MOSFET (Metal Oxide)
300 V
150A (Tc)
10V
4.5V @ 4mA
254 nC @ 10 V
13100 pF @ 25 V
±20V
-
890W (Tc)
8.3mOhm @ 75A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268HV (IXFT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
DMS3014SFG-13
Diodes Incorporated

MOSFET N-CH POWERDI3333-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
pacote: -
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MOSFET (Metal Oxide)
30 V
9.5A (Ta)
4.5V, 10V
2.2V @ 250µA
45.7 nC @ 10 V
4310 pF @ 15 V
±12V
Schottky Diode (Body)
1W (Ta)
13mOhm @ 10.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
BUK7S0R5-40HJ
Nexperia USA Inc.

BUK7S0R5-40H/SOT1235/LFPAK88

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 500A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21162 pF @ 25 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Ta)
  • Rds On (Max) @ Id, Vgs: 0.55mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK88 (SOT1235)
  • Package / Case: SOT-1235
pacote: -
Estoque15.804
MOSFET (Metal Oxide)
40 V
500A (Ta)
10V
3.6V @ 1mA
267 nC @ 10 V
21162 pF @ 25 V
+20V, -10V
-
375W (Ta)
0.55mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
AONS66405
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Ta), 310A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.3W (Ta), 215W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacote: -
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MOSFET (Metal Oxide)
40 V
68A (Ta), 310A (Tc)
8V, 10V
3.4V @ 250µA
165 nC @ 10 V
9700 pF @ 20 V
±20V
-
7.3W (Ta), 215W (Tc)
0.95mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
PJA3439_R1_00001
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque72.384
MOSFET (Metal Oxide)
60 V
300mA (Ta)
2.5V, 10V
2.5V @ 250µA
1.1 nC @ 4.5 V
51 pF @ 25 V
±20V
-
500mW (Ta)
4Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
NTMFS5C406NT1G
onsemi

T6 40V SG NCH SO8FL HEFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
353A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
SI7450DP-T1-RE3
Vishay Siliconix

N-CHANNEL 200-V (D-S) MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 19.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
3.2A (Ta), 19.8A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-