Página 1426 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  1.426/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF8252TRPBF-1
Infineon Technologies

MOSFET N-CH 25V 25A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque6.496
MOSFET (Metal Oxide)
25V
25A (Ta)
4.5V, 10V
2.35V @ 100µA
53nC @ 4.5V
5305pF @ 13V
±20V
-
2.5W (Ta)
2.7 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF3610SPBF
Infineon Technologies

MOSFET N-CH 100V 103A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.736
MOSFET (Metal Oxide)
100V
103A (Tc)
10V
4V @ 250µA
150nC @ 10V
5380pF @ 25V
±20V
-
333W (Tc)
11.6 mOhm @ 62A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFSL4227PBF
Infineon Technologies

MOSFET N-CH 200V 62A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque6.736
MOSFET (Metal Oxide)
200V
62A (Tc)
10V
5V @ 250µA
98nC @ 10V
4600pF @ 25V
±30V
-
330W (Tc)
26 mOhm @ 46A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot FDS3680
Fairchild/ON Semiconductor

MOSFET N-CH 100V 5.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque41.040
MOSFET (Metal Oxide)
100V
5.2A (Ta)
6V, 10V
4V @ 250µA
53nC @ 10V
1735pF @ 50V
±20V
-
2.5W (Ta)
46 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IXTQ250N075T
IXYS

MOSFET N-CH 75V 250A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacote: TO-3P-3, SC-65-3
Estoque4.160
MOSFET (Metal Oxide)
75V
250A (Tc)
10V
4V @ 250µA
200nC @ 10V
9900pF @ 25V
±20V
-
550W (Tc)
4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot HUF75309D3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 19A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque13.596
MOSFET (Metal Oxide)
55V
19A (Tc)
10V
4V @ 250µA
24nC @ 20V
350pF @ 25V
±20V
-
55W (Tc)
70 mOhm @ 19A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RSS100N03TB
Rohm Semiconductor

MOSFET N-CH 30V 10A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque1.106.628
MOSFET (Metal Oxide)
30V
10A (Ta)
4V, 10V
2.5V @ 1mA
14nC @ 5V
1070pF @ 10V
20V
-
2W (Ta)
13 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot STW14NM50FD
STMicroelectronics

MOSFET N-CH 500V 14A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.144
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
5V @ 250µA
12nC @ 10V
1000pF @ 25V
±30V
-
160W (Tc)
400 mOhm @ 6A, 10V
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRFB7740PBF
Infineon Technologies

MOSFET N-CH 75V 87A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 52A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque970.368
MOSFET (Metal Oxide)
75V
87A (Tc)
6V, 10V
3.7V @ 100µA
122nC @ 10V
4650pF @ 25V
±20V
-
143W (Tc)
7.3 mOhm @ 52A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPP80N04S404AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque6.000
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 35µA
43nC @ 10V
3440pF @ 25V
±20V
-
71W (Tc)
4.6 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IXTT11P50
IXYS

MOSFET P-CH 500V 11A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque3.056
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
5V @ 250µA
130nC @ 10V
4700pF @ 25V
±20V
-
300W (Tc)
750 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFJ26N50P3
IXYS

MOSFET N-CH 500V 14A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 265 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque2.448
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
5V @ 4mA
42nC @ 10V
2220pF @ 25V
±30V
-
180W (Tc)
265 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
IXTP32N20T
IXYS

MOSFET N-CH 200V 32A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.368
MOSFET (Metal Oxide)
200V
32A (Tc)
10V
4.5V @ 250µA
38nC @ 10V
1760pF @ 25V
±20V
-
200W (Tc)
72 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
DMP4013LFGQ-13
Diodes Incorporated

MOSFET PCH 40V 10.3A POWERDI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque5.296
MOSFET (Metal Oxide)
40V
10.3A (Ta)
4.5V, 10V
3V @ 250µA
68.6nC @ 10V
3426pF @ 20V
±20V
-
1W (Ta)
13 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
hot STF15N65M5
STMicroelectronics

MOSFET N-CH 650V 11A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque8.844
MOSFET (Metal Oxide)
650V
11A (Tc)
10V
5V @ 250µA
22nC @ 10V
816pF @ 100V
±25V
-
30W (Tc)
340 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPD70R900P7SAUMA1
Infineon Technologies

MOSFET N-CH 700V 12.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 30.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque5.456
MOSFET (Metal Oxide)
700V
6A (Tc)
10V
3.5V @ 60µA
6.8nC @ 10V
211pF @ 400V
±16V
-
30.5W (Tc)
900 mOhm @ 1.1A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
RCJ510N25TL
Rohm Semiconductor

MOSFET N-CH 250V 51A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
pacote: SC-83
Estoque14.316
MOSFET (Metal Oxide)
250V
51A (Tc)
10V
5V @ 1mA
120nC @ 10V
7000pF @ 25V
±30V
-
1.56W (Ta), 40W (Tc)
65 mOhm @ 25.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
SSM6J207FE,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A ES6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 251 mOhm @ 650mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6 (1.6x1.6)
  • Package / Case: SOT-563, SOT-666
pacote: SOT-563, SOT-666
Estoque3.104
MOSFET (Metal Oxide)
30V
1.4A (Ta)
4V, 10V
2.6V @ 1mA
-
137pF @ 15V
±20V
-
500mW (Ta)
251 mOhm @ 650mA, 10V
150°C (TJ)
Surface Mount
ES6 (1.6x1.6)
SOT-563, SOT-666
RQ3E180GNTB
Rohm Semiconductor

MOSFET N-CH 30V 18A 8-HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque7.424
MOSFET (Metal Oxide)
30V
18A (Ta)
4.5V, 10V
2.5V @ 1mA
22.4nC @ 10V
1520pF @ 15V
±20V
-
2W (Ta)
4.3 mOhm @ 18A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
DMN2230UQ-7
Diodes Incorporated

MOSFET N-CH 20V 2A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque6.176
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
1V @ 250µA
2.3nC @ 10V
188pF @ 10V
±12V
-
600mW (Ta)
110 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IXTT48P20P
IXYS

MOSFET P-CH 200V 48A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque8.220
MOSFET (Metal Oxide)
200V
48A (Tc)
10V
4.5V @ 250µA
103nC @ 10V
5400pF @ 25V
±20V
-
462W (Tc)
85 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot IPA60R190C6
Infineon Technologies

MOSFET N-CH 600V 20.2A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque19.848
MOSFET (Metal Oxide)
600V
20.2A (Tc)
10V
3.5V @ 630µA
63nC @ 10V
1400pF @ 100V
±20V
-
34W (Tc)
190 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-FP
TO-220-3 Full Pack
GPI65008DF56
GaNPower

GANFET N-CH 650V 8A DFN5X6

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
  • Vgs (Max): +7.5V, -12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacote: -
Request a Quote
GaNFET (Gallium Nitride)
650 V
8A
6V
1.4V @ 3.5mA
2.1 nC @ 6 V
63 pF @ 400 V
+7.5V, -12V
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
NVMJST1D6N04CTXG
onsemi

TRENCH 6 40V LFPAK 5X7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-TCPAK
  • Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
40 V
314A (Tc)
10V
3.5V @ 130µA
47 nC @ 10 V
3300 pF @ 25 V
±20V
-
300W (Tc)
1.65mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
10-TCPAK
10-PowerLSOP (0.209", 5.30mm Width)
PJD35P03_L2_00001
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque6.609
MOSFET (Metal Oxide)
30 V
8.4A (Ta), 35A (Tc)
4.5V, 10V
2.5V @ 250µA
11 nC @ 4.5 V
1169 pF @ 15 V
±20V
-
2W (Ta), 35W (Tc)
19mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
MSC080SMA120B4
Microchip Technology

SICFET N-CH 1200V 37A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacote: -
Estoque312
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
200W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
FDN5630-G
onsemi

MOSFET N-CH 60V 1.7A SUPERSOT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
60 V
1.7A (Ta)
6V, 10V
3V @ 250µA
10 nC @ 10 V
560 pF @ 15 V
±20V
-
500mW (Ta)
100mOhm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
2SK3113-ZK-E2-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
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