Página 1273 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  1.273/1.502
Imagem
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pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP100N04S2L03AKSA2
Infineon Technologies

MOSFET N-CH 40V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.560
MOSFET (Metal Oxide)
40V
100A (Tc)
4.5V, 10V
2V @ 250µA
230nC @ 10V
6000pF @ 25V
±20V
-
300W (Tc)
3.3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
hot IRL3103STRL
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque12.852
MOSFET (Metal Oxide)
30V
64A (Tc)
4.5V, 10V
1V @ 250µA
33nC @ 4.5V
1650pF @ 25V
±16V
-
94W (Tc)
12 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK20A25D,S5Q(M
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.968
MOSFET (Metal Oxide)
250V
20A (Ta)
10V
3.5V @ 1mA
55nC @ 10V
2550pF @ 100V
±20V
-
45W (Tc)
100 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
2SK2740
Rohm Semiconductor

MOSFET N-CH 600V 7A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.392
MOSFET (Metal Oxide)
600V
7A (Ta)
10V
4V @ 1mA
-
1050pF @ 10V
±30V
-
30W (Tc)
1.2 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
IPB042N10N3GE8187ATMA1
Infineon Technologies

MOSFET N-CH 100V 100A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.944
MOSFET (Metal Oxide)
100V
100A (Tc)
6V, 10V
3.5V @ 150µA
117nC @ 10V
8410pF @ 50V
±20V
-
214W (Tc)
4.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC0993NDATMA1
Infineon Technologies

MOSFET N-CH 30V 8TISON

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque2.624
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSP296NH6433XTMA1
Infineon Technologies

MOSFET N-CH 100V 1.1A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque6.224
MOSFET (Metal Oxide)
100V
1.2A (Ta)
4.5V, 10V
1.8V @ 100µA
6.7nC @ 10V
152.7pF @ 25V
±20V
-
1.8W (Ta)
600 mOhm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
NDDL01N60ZT4G
ON Semiconductor

MOSFET N-CH 600V 0.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.904
MOSFET (Metal Oxide)
600V
800mA (Ta)
10V
4.5V @ 50µA
4.9nC @ 10V
92pF @ 25V
±30V
-
26W (Tc)
15 Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
DMN15H310SE-13
Diodes Incorporated

MOSFET N-CH 150V 2A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque2.112
MOSFET (Metal Oxide)
150V
2A (Ta), 7.1A (Tc)
5V, 10V
3V @ 250µA
8.7nC @ 10V
405pF @ 25V
±20V
-
1.9W (Ta)
310 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot IRFB42N20DPBF
Infineon Technologies

MOSFET N-CH 200V 44A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque104.724
MOSFET (Metal Oxide)
200V
44A (Tc)
10V
5.5V @ 250µA
140nC @ 10V
3430pF @ 25V
±30V
-
2.4W (Ta), 330W (Tc)
55 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRL60B216
Infineon Technologies

MOSFET N-CH 60V 195A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 258nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 15570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque103.464
MOSFET (Metal Oxide)
60V
195A (Tc)
4.5V, 10V
2.4V @ 250µA
258nC @ 4.5V
15570pF @ 25V
±20V
-
375W (Tc)
1.9 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SUP53P06-20-E3
Vishay Siliconix

MOSFET P-CH 60V 9.2A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque102.000
MOSFET (Metal Oxide)
60V
9.2A (Ta), 53A (Tc)
4.5V, 10V
3V @ 250µA
115nC @ 10V
3500pF @ 25V
±20V
-
3.1W (Ta), 104.2W (Tc)
19.5 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STD16NF25
STMicroelectronics

MOSFET N-CH 250V 13A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque390.000
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
4V @ 250µA
18nC @ 10V
680pF @ 25V
±20V
-
100W (Tc)
235 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
NDD02N40T4G
ON Semiconductor

MOSFET N-CH 400V 1.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque65.592
MOSFET (Metal Oxide)
400V
1.7A (Tc)
10V
2V @ 250µA
5.5nC @ 10V
121pF @ 25V
±20V
-
39W (Tc)
5.5 Ohm @ 220mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7336ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacote: PowerPAK? SO-8
Estoque182.424
MOSFET (Metal Oxide)
30V
30A (Ta)
4.5V, 10V
3V @ 250µA
50nC @ 4.5V
5600pF @ 15V
±20V
-
5.4W (Ta)
3 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI03N06-TP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Tj)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
60 V
3A (Ta)
4.5V, 10V
2V @ 250µA
8.8 nC @ 10 V
400 pF @ 30 V
±20V
-
1.2W (Tj)
80mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMT4003SCT
Diodes Incorporated

MOSFET N-CH 40V 205A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: -
Estoque90
MOSFET (Metal Oxide)
40 V
205A (Tc)
10V
4V @ 250µA
75.6 nC @ 10 V
6865 pF @ 20 V
±20V
-
156W
3mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
R6004JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 4A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque2.979
MOSFET (Metal Oxide)
600 V
4A (Tc)
15V
7V @ 450µA
10.5 nC @ 15 V
260 pF @ 100 V
±30V
-
60W (Tc)
1.43Ohm @ 2A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SUP45P03-09-GE3
Vishay Siliconix

MOSFET P-CH 30V 45A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 73.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
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MOSFET (Metal Oxide)
30 V
45A (Tc)
4.5V, 10V
2.5V @ 250µA
90 nC @ 10 V
2700 pF @ 15 V
±20V
-
73.5W (Tc)
8.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
PJQ4448P-AU_R2_000A1
Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333-8
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque14.370
MOSFET (Metal Oxide)
40 V
10A (Ta), 42A (Tc)
4.5V, 10V
2.5V @ 250µA
10 nC @ 4.5 V
1040 pF @ 20 V
±20V
-
2.4W (Ta), 42W (Tc)
11mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN3333-8
8-PowerVDFN
XP4NA1R4CMT-A
YAGEO XSEMI

MOSFET N-CH 45V 49A 223A PMPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 223A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PMPAK® 5 x 6
  • Package / Case: 8-PowerLDFN
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
45 V
49A (Ta), 223A (Tc)
4.5V, 10V
3V @ 250µA
75.2 nC @ 4.5 V
7200 pF @ 20 V
±20V
-
5W (Ta), 104W (Tc)
1.4mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PMPAK® 5 x 6
8-PowerLDFN
IRFAG20
International Rectifier

N-CHANNEL HERMETIC MOS HEXFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 50W
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AA (TO-3)
  • Package / Case: TO-204AA, TO-3
pacote: -
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MOSFET (Metal Oxide)
1000 V
1.3A
-
-
-
-
-
-
50W
-
-
Through Hole
TO-204AA (TO-3)
TO-204AA, TO-3
PMV48XP-MIR
Nexperia USA Inc.

MOSFET P-CH 20V 3.5A TO236AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
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MOSFET (Metal Oxide)
20 V
3.5A (Ta)
2.5V, 4.5V
1.25V @ 250µA
11 nC @ 4.5 V
1000 pF @ 10 V
±12V
-
510mW (Ta), 4.15W (Tc)
55mOhm @ 2.4A, 4.5V
150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SFU9214TU
Fairchild Semiconductor

P-CHANNEL POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 1.53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 770mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
pacote: -
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MOSFET (Metal Oxide)
250 V
1.53A (Tc)
10V
4V @ 250µA
11 nC @ 10 V
295 pF @ 25 V
±30V
-
2.5W (Ta), 19W (Tc)
4Ohm @ 770mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
2SK2498-AZ
Renesas

2SK2498 - SWITCHING N-CHANNEL PO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: -
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MOSFET (Metal Oxide)
60 V
50A (Ta)
4V, 10V
2V @ 1mA
152 nC @ 10 V
3400 pF @ 10 V
±20V
-
2W (Ta), 35W (Tc)
9mOhm @ 25A, 10V
150°C
Through Hole
ITO-220AB
TO-220-3 Full Pack, Isolated Tab
IPP011N04NF2SAKMA1
Infineon Technologies

TRENCH PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 201A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 249µA
  • Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-U05
  • Package / Case: TO-220-3
pacote: -
Estoque2.331
MOSFET (Metal Oxide)
40 V
44A (Ta), 201A (Tc)
6V, 10V
3.4V @ 249µA
315 nC @ 10 V
15000 pF @ 20 V
±20V
-
3.8W (Ta), 375W (Tc)
1.15mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-U05
TO-220-3
TK1K0A60F-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 770µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque108
MOSFET (Metal Oxide)
600 V
7.5A (Ta)
10V
4V @ 770µA
24 nC @ 10 V
890 pF @ 300 V
±30V
-
40W (Tc)
1Ohm @ 3.8A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
2SK4092-S35-A
Renesas

2SK4092-S35-A - SWITCHING N-CHAN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P (MP-88)
  • Package / Case: TO-3P-3, SC-65-3
pacote: -
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MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
3.5V @ 1mA
50 nC @ 10 V
3240 pF @ 10 V
±30V
-
3W (Ta), 200W (Tc)
400mOhm @ 10A, 10V
150°C
Through Hole
TO-3P (MP-88)
TO-3P-3, SC-65-3