Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 12V 8.9A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque157.104 |
|
MOSFET (Metal Oxide) | 12V | 8.9A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | ±8V | - | 2.5W (Ta) | 24 mOhm @ 8.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 8DFN
|
pacote: - |
Estoque5.280 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220
|
pacote: TO-220-3 |
Estoque7.456 |
|
MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | ±30V | - | 123W (Tc) | 4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 5.8A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque1.299.756 |
|
MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 20nC @ 10V | - | ±20V | - | 1.3W (Ta) | 24 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 500V 11A TO-220FI
|
pacote: TO-220-3 Full Pack |
Estoque2.512 |
|
MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | - | 48.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 430 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 30V 12A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque30.000 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 490pF @ 15V | ±20V | - | 2.4W (Ta), 5W (Tc) | 20 mOhm @ 8.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.280 |
|
MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | - | 277.8W (Tc) | 110 mOhm @ 12.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 44A TO220
|
pacote: TO-220-3 |
Estoque2.640 |
|
MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 4.5V @ 4.4mA | 78nC @ 10V | 3090pF @ 400V | ±30V | - | 312W (Tc) | 67 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
IXYS |
MOSFET N-CH 200V 96A TO-247
|
pacote: TO-247-3 |
Estoque7.344 |
|
MOSFET (Metal Oxide) | 200V | 96A (Tc) | 10V | 5V @ 250µA | 145nC @ 10V | 4800pF @ 25V | ±20V | - | 600W (Tc) | 24 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
STMicroelectronics |
MOSFET NCH 600V 34A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque5.936 |
|
MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 5V @ 250µA | 56nC @ 10V | 2500pF @ 100V | ±25V | - | 250W (Tc) | 93 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 60V 52A SO8
|
pacote: PowerPAK? SO-8 |
Estoque3.648 |
|
MOSFET (Metal Oxide) | 60V | 52A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 108nC @ 10V | 4586pF @ 30V | ±20V | - | 83W (Tc) | 18 mOhm @ 3.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Microsemi Corporation |
MOSFET N-CH 600V 47A D3PAK
|
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Estoque4.368 |
|
MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 3.9V @ 2.7mA | 260nC @ 10V | 7015pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH 25V 24A 8TDSON
|
pacote: 8-PowerTDFN |
Estoque4.912 |
|
MOSFET (Metal Oxide) | 25V | 24A (Ta), 82A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 10V | 1100pF @ 12V | ±16V | - | 2.5W (Ta), 29W (Tc) | 2.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 12V 8.2A 8-TSSOP
|
pacote: 8-TSSOP (0.173", 4.40mm Width) |
Estoque13.560 |
|
MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 800mV @ 400µA | 110nC @ 5V | - | ±8V | - | 1.05W (Ta) | 8.5 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
STMicroelectronics |
MOSFET N-CH 30V 55A I2PAK
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque16.356 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 27nC @ 4.5V | 1265pF @ 25V | ±16V | - | 80W (Tc) | 13 mOhm @ 27.5A, 10V | -60°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 7A 8MLP
|
pacote: 8-PowerWDFN |
Estoque75.984 |
|
MOSFET (Metal Oxide) | 40V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 10V | 945pF @ 20V | ±20V | - | 2.3W (Ta), 24W (Tc) | 26 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET P-CH 40V 3.3A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque459.036 |
|
MOSFET (Metal Oxide) | 40V | 3.3A (Ta) | 15V, 10V | 2.2V @ 250µA | 14nC @ 4.5V | 805pF @ 20V | ±16V | - | 1.1W (Ta) | 72 mOhm @ 4.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 74A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque85.044 |
|
MOSFET (Metal Oxide) | 75V | 74A (Tc) | 10V | 2.8V @ 1mA | 81nC @ 10V | 5251pF @ 25V | ±16V | - | 158W (Tc) | 11 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.391.604 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 9.6nC @ 4.5V | 829.9pF @ 10V | ±8V | - | 780mW (Ta) | 25 mOhm @ 8.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
TRENCH >=100V PG-TO252-3
|
pacote: - |
Estoque5.721 |
|
MOSFET (Metal Oxide) | 100 V | 2.6A (Ta), 13.7A (Tc) | 10V | 4V @ 1.04mA | 45 nC @ 10 V | 2000 pF @ 50 V | ±20V | - | 3W (Ta), 83W (Tc) | 186mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Motorola |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 1670 pF @ 25 V | ±20V | - | 142W (Tc) | 1.2Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Fairchild Semiconductor |
P-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | 1926 pF @ 10 V | ±8V | - | 800mW (Ta) | 33mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI333
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 4A (Ta), 14A (Tc) | 4.5V, 10V | 3V @ 250µA | 14 nC @ 10 V | 740 pF @ 30 V | ±20V | - | 2.5W (Ta) | 69mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Vishay Siliconix |
P-CHANNEL 20-V (D-S) MOSFET
|
pacote: - |
Estoque1.158 |
|
MOSFET (Metal Oxide) | 20 V | 4.6A (Ta), 6A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 25 nC @ 4.5 V | 1090 pF @ 10 V | ±8V | - | 1.25W (Ta), 2.5W (Tc) | 39mOhm @ 4.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 13A (Ta) | - | 3V @ 250µA | 79 nC @ 10 V | 1800 pF @ 25 V | - | - | - | 11mOhm @ 7.3A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
PSMN5R3-25MLD - N-CHANNEL 25V, L
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 70A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 12.7 nC @ 10 V | 858 pF @ 12 V | ±20V | Schottky Diode (Body) | 51W (Ta) | 5.9mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
||
onsemi |
SF3 FRFET AUTO 50MOHM TO-247-4L
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 5V @ 1.7mA | 123.8 nC @ 10 V | 4855 pF @ 400 V | ±30V | - | 403W (Tc) | 50mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Vishay Siliconix |
N-CHANNEL 100 V (D-S) MOSFET D2P
|
pacote: - |
Estoque2.340 |
|
MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 3.8V @ 250µA | 126 nC @ 10 V | 6750 pF @ 50 V | ±20V | - | 375W (Tc) | 3.83mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2PAK (6 Leads + Tab) |