Transistores - FET, MOSFET - Simples

IRF7433TRPBF

Infineon Technologies

MOSFET P-CH 12V 8.9A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1877pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

AON7448L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 8DFN

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacote: -

GP1M004A090H

Global Power Technologies Group

MOSFET N-CH 900V 4A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 123W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacote: TO-220-3

SI4412ADY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 5.8A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

BFL4037

ON Semiconductor

MOSFET N-CH 500V 11A TO-220FI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FI(LS)
• Package / Case: TO-220-3 Full Pack

pacote: TO-220-3 Full Pack

SI4176DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

IPB65R110CFDAATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 277.8W (Tc)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FCP067N65S3

Fairchild/ON Semiconductor

MOSFET N-CH 650V 44A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 312W (Tc)
• Rds On (Max) @ Id, Vgs: 67 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacote: TO-220-3

IXTH96N20P

IXYS

MOSFET N-CH 200V 96A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacote: TO-247-3

STB43N60DM2

STMicroelectronics

MOSFET NCH 600V 34A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SQJ459EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 52A SO8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

pacote: PowerPAK? SO-8

APT47N60SC3G

Microsemi Corporation

MOSFET N-CH 600V 47A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3 [S]
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

BSC026NE2LS5ATMA1

Infineon Technologies

MOSFET N-CH 25V 24A 8TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

SI6423DQ-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 8.2A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.05W (Ta)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 9.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

pacote: 8-TSSOP (0.173", 4.40mm Width)

STI55NF03L

STMicroelectronics

MOSFET N-CH 30V 55A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 27.5A, 10V
• Operating Temperature: -60°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacote: TO-262-3 Long Leads, I2Pak, TO-262AA

FDMC8015L

Fairchild/ON Semiconductor

MOSFET N-CH 40V 7A 8MLP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MLP (3.3x3.3)
• Package / Case: 8-PowerWDFN

pacote: 8-PowerWDFN

SI4447DY-T1-E3

Vishay Siliconix

MOSFET P-CH 40V 3.3A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

BUK6211-75C,118

Nexperia USA Inc.

MOSFET N-CH 75V 74A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5251pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 158W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

DMG3414U-7

Diodes Incorporated

MOSFET N-CH 20V 4.2A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 829.9pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 780mW (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

IPD19DP10NMATMA1

Infineon Technologies

TRENCH >=100V PG-TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.04mA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

NTB6N60T4

Motorola

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 142W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Request a Quote

SI3447DV

Fairchild Semiconductor

P-CHANNEL MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 5.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SuperSOT™-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacote: -

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DMN6069SFVWQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

pacote: -

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SI2323CDS-T1-BE3

Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 39mOhm @ 4.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: -

IRF7413QTRPBF

Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: -

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PSMN5R3-25MLD-115

Nexperia USA Inc.

PSMN5R3-25MLD - N-CHANNEL 25V, L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 51W (Ta)
• Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

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NVH4L050N65S3F

onsemi

SF3 FRFET AUTO 50MOHM TO-247-4L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1.7mA
• Gate Charge (Qg) (Max) @ Vgs: 123.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4855 pF @ 400 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 403W (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

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SUM70042M-GE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET D2P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

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