Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 16A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.296 |
|
MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | ±20V | - | 79W (Tc) | 115 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 90A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque3.360 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5200pF @ 15V | ±20V | - | 115W (Tc) | 3.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 25V 50A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.048 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 80µA | 41nC @ 5V | 5199pF @ 15V | ±20V | - | 115W (Tc) | 3.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3
|
pacote: 3-SMD, Flat Leads |
Estoque78.000 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 0.9V, 2.5V | 800mV @ 1mA | 11nC @ 2.5V | 630pF @ 10V | ±5V | - | 1W (Ta) | 40 mOhm @ 2A, 2.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
||
Renesas Electronics America |
MOSFET N-CH 40V 90A TO-220
|
pacote: TO-220-3 Full Pack |
Estoque5.152 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7050pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 2.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 100A TO220AB
|
pacote: TO-220-3 |
Estoque5.696 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 1mA | 97nC @ 10V | 5708pF @ 25V | ±20V | - | 203W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
NXP |
MOSFET N-CH 25V 75A TO220AB
|
pacote: TO-220-3 |
Estoque7.072 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 36nC @ 5V | 3140pF @ 25V | ±20V | - | 150W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 250V 4.4A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.576 |
|
MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | - | 1.1 Ohm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 140A TO220AB
|
pacote: TO-220-3 |
Estoque4.144 |
|
MOSFET (Metal Oxide) | 55V | 140A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 3650pF @ 25V | ±20V | - | 330W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 16A SO8FL
|
pacote: 8-PowerTDFN, 5 Leads |
Estoque6.348 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta), 155A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 71.3nC @ 10V | 4970pF @ 12V | ±20V | - | 900mW (Ta), 86.2W (Tc) | 2.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacote: 8-PowerTDFN |
Estoque5.312 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 23nC @ 10V | 1300pF @ 25V | ±20V | - | 3.6W (Ta), 50W (Tc) | 4.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 30V 17.6A POWERDI
|
pacote: 8-PowerWDFN |
Estoque2.608 |
|
MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | ±20V | - | 900mW (Ta) | 4.6 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
STMicroelectronics |
MOSFET N-CH 950V 4A I2PAKFP
|
pacote: TO-262-3 Full Pack, I2Pak |
Estoque13.728 |
|
MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 5V @ 100µA | 19nC @ 10V | 460pF @ 25V | ±30V | - | 25W (Tc) | 3.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
Infineon Technologies |
MOSFET N-CH 25V 16A TSDSON-8
|
pacote: 8-PowerTDFN |
Estoque40.104 |
|
MOSFET (Metal Oxide) | 25V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 10V | 1200pF @ 12V | ±20V | - | 2.1W (Ta), 37W (Tc) | 3.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 28A 8HSOP
|
pacote: 8-PowerTDFN |
Estoque5.536 |
|
MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 94nC @ 10V | 5100pF @ 15V | ±20V | - | 3W (Ta), 30W (Tc) | 2.3 mOhm @ 28A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 12A HSMT8
|
pacote: 8-PowerVDFN |
Estoque2.352 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 29nC @ 10V | 1500pF @ 15V | ±20V | - | 2W (Ta) | 9.3 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
Texas Instruments |
12V P-CHANNEL FEMTOFET MOSFET
|
pacote: 3-XFDFN |
Estoque18.168 |
|
MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | 628pF @ 6V | -6V | - | 500mW (Ta) | 35 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
STMicroelectronics |
MOSFET N-CH 600V I2PAK-FP
|
pacote: TO-262-3 Full Pack, I2Pak |
Estoque9.252 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | ±25V | - | 25W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
Diodes Incorporated |
MOSFET P-CH 20V 0.33A X2DFN-3
|
pacote: 3-XFDFN |
Estoque96.618 |
|
MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.8nC @ 4.5V | 49pF @ 15V | ±8V | - | 360mW (Ta) | 1 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 52A U8FL
|
pacote: 8-PowerWDFN |
Estoque5.344 |
|
MOSFET (Metal Oxide) | 30V | 9.3A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 18.2nC @ 10V | 1113pF @ 15V | ±20V | - | 820mW (Ta), 25.5W (Tc) | 5.9 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
onsemi |
PCH+SBD 4V DRIVE SERIES
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
N-CHANNEL 30 V (D-S) MOSFET POWE
|
pacote: - |
Estoque36.120 |
|
MOSFET (Metal Oxide) | 30 V | 22A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 33 nC @ 10 V | 1650 pF @ 15 V | +20V, -16V | - | 3.5W (Ta), 26.5W (Tc) | 4.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
||
Diodes Incorporated |
DIODE
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 430mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.97 nC @ 8 V | 47 pF @ 16 V | ±8V | - | 230mW (Ta) | 1.1Ohm @ 430mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
MOSLEADER |
P -20V SOT-23
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UF6
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | ±8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Central Semiconductor Corp |
CEN1232 IC
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
MOSLEADER |
Single P -30V -4.8A SOT23
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 4.1A/20A 4DFN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4.1A (Ta), 20A (Tc) | 10V | 4V @ 250µA | 34 nC @ 10 V | 1935 pF @ 100 V | ±20V | - | 8.3W (Ta), 208W (Tc) | 210mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-DFN (8x8) | 4-PowerTSFN |