Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 30V 8.9A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque4.848 |
|
MOSFET (Metal Oxide) | 30V | 8.9A (Ta) | 4.5V, 10V | 2V @ 100µA | 69nC @ 10V | 1754pF @ 25V | ±20V | - | 2.35W (Ta) | 21 mOhm @ 8.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 100V 7.7A TO-220FP
|
pacote: TO-220-3 Full Pack |
Estoque2.672 |
|
MOSFET (Metal Oxide) | 100V | 7.7A (Ta) | - | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | - | - | - | 300 mOhm @ 4.6A, 10V | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A
|
pacote: - |
Estoque3.920 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 22.5nC @ 10V | 951pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | - | - | - |
||
Rohm Semiconductor |
MOSFET N-CH 30V 7A MPT6
|
pacote: 6-SMD, Flat Leads |
Estoque2.720 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4V, 10V | 2.5V @ 1mA | 5.8nC @ 5V | 390pF @ 10V | ±20V | - | 2W (Ta) | 28 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
||
ON Semiconductor |
MOSFET N-CH 30V 8.8A SO8FL
|
pacote: 8-PowerTDFN, 5 Leads |
Estoque804.588 |
|
MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 58.5A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 25nC @ 11.5V | 1400pF @ 12V | ±20V | - | 870mW (Ta), 38.5W (Tc) | 6.95 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET N-CH 30V 4.5A 6-TSOP
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque414.504 |
|
MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 13nC @ 10V | - | ±20V | - | 1.1W (Ta) | 35 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque360.000 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2V, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | 680pF @ 10V | ±12V | - | 700mW (Ta) | 55 mOhm @ 2.2A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
ON Semiconductor |
MOSFET N-CH 25V 12A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque5.680 |
|
MOSFET (Metal Oxide) | 25V | 12A (Ta), 78A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24nC @ 4.5V | 1960pF @ 12V | ±20V | - | 1.31W (Ta), 56.6W (Tc) | 5.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque59.760 |
|
MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 500 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque129.600 |
|
MOSFET (Metal Oxide) | 30V | 70A (Tc) | 5V, 10V | 1V @ 250µA | 30nC @ 5V | 1440pF @ 25V | ±18V | - | 100W (Tc) | 9.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET P-CH 100V 36A TO-268
|
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Estoque4.432 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.976 |
|
MOSFET (Metal Oxide) | 40V | 65A (Ta) | 6V, 10V | 3V @ 1mA | 63nC @ 10V | 2800pF @ 10V | ±20V | - | 88W (Tc) | 4.5 mOhm @ 32.5A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET P-CH 40V 36A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque121.752 |
|
MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22nC @ 4.5V | 2850pF @ 25V | ±20V | - | 60W (Tc) | 20.5 mOhm @ 18A, 10V | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N CH 800V 6A TO220FP
|
pacote: TO-220-3 Full Pack |
Estoque5.008 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | ±30V | - | 25W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 8A TO-220
|
pacote: TO-220-3 |
Estoque18.600 |
|
MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 5V @ 250µA | 58nC @ 10V | 2730pF @ 25V | ±30V | - | 205W (Tc) | 1.4 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 12A SC70-6
|
pacote: PowerPAK? SC-70-6 |
Estoque51.222 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 17nC @ 10V | 570pF @ 15V | ±20V | - | 3.5W (Ta), 19W (Tc) | 18 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Infineon Technologies |
MOSFET P-CH 150V 2.2A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.572 |
|
MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | ±20V | - | 2.5W (Ta) | 240 mOhm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 30V 1.1A SC59-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque108.000 |
|
MOSFET (Metal Oxide) | 30V | 1.1A (Ta) | 4.5V, 10V | 3V @ 1mA | 5.5nC @ 10V | 150pF @ 10V | ±20V | - | 500mW (Ta) | 240 mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 2.6A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque735.192 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 2.5V, 4.5V | 850mV @ 250µA | 5.5nC @ 4.5V | - | ±8V | - | 710mW (Ta) | 57 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 17.2A/100A PWRDI
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 17.2A (Ta), 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34.9 nC @ 10 V | 2162 pF @ 30 V | ±20V | - | 2.88W (Ta), 100W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type Q) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 800V 2A TO220-FP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.9V @ 120µA | 16 nC @ 10 V | 290 pF @ 100 V | ±20V | - | 30.5W (Tc) | 2.7Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 44A PLUS247-3
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
N-CHANNEL 40-V (D-S) MOSFET
|
pacote: - |
Estoque42.816 |
|
MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 165 nC @ 10 V | 9100 pF @ 20 V | +20V, -16V | - | 6.25W (Ta), 125W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
||
STMicroelectronics |
MOSFET N-CH 600V 13A D2PAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 4.75V @ 250µA | 16.8 nC @ 10 V | 650 pF @ 100 V | ±25V | - | 110W (Tc) | 280mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 15.8A/52A PPAK
|
pacote: - |
Estoque6.420 |
|
MOSFET (Metal Oxide) | 60 V | 15.8A (Ta), 52A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1235 pF @ 30 V | ±20V | - | 3.6W (Ta), 39W (Tc) | 7.2mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 9A TO252-3
|
pacote: - |
Estoque14.673 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 4.5V @ 180µA | 18 nC @ 10 V | 807 pF @ 400 V | ±20V | - | 51W (Tc) | 280mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET 800V TDSON-8
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |