Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 60V 8.83A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque579.672 |
|
MOSFET (Metal Oxide) | 60V | 8.83A (Ta) | - | 4V @ 250µA | 13nC @ 10V | 420pF @ 25V | - | - | 42W (Tc) | 300 mOhm @ 6.2A, 10V | - | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque7.536 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 1.8V @ 26µA | 1.5nC @ 10V | 45pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 24A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.544 |
|
MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | ±30V | - | 3.8W (Ta), 170W (Tc) | 100 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 30V 90A TO220AB
|
pacote: TO-220-3 |
Estoque60.324 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 257nC @ 10V | 12065pF @ 15V | ±20V | - | 3.75W (Ta), 250W (Tc) | 2.9 mOhm @ 28.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP
|
pacote: 8-TSSOP (0.173", 4.40mm Width) |
Estoque4.592 |
|
MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 2.5V, 10V | 600mV @ 250µA | 48nC @ 4.5V | - | ±12V | - | 1.08W (Ta) | 9 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
ON Semiconductor |
MOSFET N-CH 25V 10A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque10.452 |
|
MOSFET (Metal Oxide) | 25V | 10A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 13.2nC @ 5V | 1333pF @ 20V | ±20V | - | 1.36W (Ta), 62.5W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque6.688 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 300 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 18A 5DFB
|
pacote: 4-VSFN Exposed Pad |
Estoque7.728 |
|
MOSFET (Metal Oxide) | 600V | 3.6A (Ta), 18A (Tc) | 10V | 4.1V @ 250µA | 20nC @ 10V | 1038pF @ 100V | ±30V | - | 8.3W (Ta), 278W (Tc) | 250 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
||
Vishay Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8
|
pacote: PowerPAK? SO-8 |
Estoque4.160 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 180nC @ 10V | 5170pF @ 15V | ±25V | - | 5.4W (Ta), 83W (Tc) | 7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Torex Semiconductor Ltd |
MOSFET P-CH 30V 2.5A SOT89
|
pacote: TO-243AA |
Estoque72.000 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | - | - | 280pF @ 10V | ±20V | - | 2W (Ta) | 150 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
||
ON Semiconductor |
MOSFET N-CH 20V 5.5A MCPH6
|
pacote: 6-SMD, Flat Leads |
Estoque3.792 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 5.1nC @ 4.5V | 410pF @ 10V | ±12V | - | 1.5W (Ta) | 38 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
||
ON Semiconductor |
MOSFET N-CH 30V 2A MCPH3
|
pacote: 3-SMD, Flat Leads |
Estoque36.000 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 1.8V, 4.5V | - | 1.7nC @ 4.5V | 130pF @ 10V | ±12V | - | 800mW (Ta) | 165 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 3-MCPH | 3-SMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 100V 8.3A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque123.108 |
|
MOSFET (Metal Oxide) | 100V | 8.3A (Ta) | 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | ±20V | - | 2.5W (Ta) | 18 mOhm @ 8.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N CH 500V 5A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.808 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 13V | 3.5V @ 130µA | 12.4nC @ 10V | 280pF @ 100V | ±20V | Super Junction | 40W (Tc) | 800 mOhm @ 1.5A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506
|
pacote: 8-PowerTDFN |
Estoque7.136 |
|
MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 68.6nC @ 10V | 4305pF @ 25V | ±20V | - | 3.6W (Ta), 167W (Tc) | 2.7 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.34A
|
pacote: SC-70, SOT-323 |
Estoque2.336 |
|
MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.4nC @ 4.5V | 28.5pF @ 30V | ±20V | - | 320mW (Ta) | 2 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 100A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque94.278 |
|
MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 2.8V @ 1mA | 123nC @ 10V | 7600pF @ 25V | ±16V | - | 204W (Tc) | 7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET P-CH 12V 4A TUMT3
|
pacote: 3-SMD, Flat Leads |
Estoque2.089.200 |
|
MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 37nC @ 4.5V | 4000pF @ 6V | -8V | - | 800mW (Ta) | 30 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 100V 31A TO220FP
|
pacote: TO-220-3 Full Pack |
Estoque5.600 |
|
MOSFET (Metal Oxide) | 100V | 31A (Tc) | 4V, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | ±16V | - | 63W (Tc) | 26 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Harris Corporation |
1.7A, 400V, 5OHM, N-CHANNEL,
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK
|
pacote: - |
Estoque17.871 |
|
MOSFET (Metal Oxide) | 100 V | 18.8A (Ta), 81A (Tc) | 7.5V, 10V | 4V @ 250µA | 70 nC @ 10 V | 3250 pF @ 50 V | ±20V | - | 5.4W (Ta), 100W (Tc) | 6.1mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
MOSFET N-CH 500V 20A TO247-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 20A (Tc) | - | 4V @ 250µA | 190 nC @ 10 V | 4100 pF @ 25 V | - | - | - | 270mOhm @ 11A, 10V | - | Through Hole | TO-247-3 | TO-247-3 |
||
Harris Corporation |
P-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 4V @ 250µA | 45 nC @ 10 V | 550 pF @ 25 V | ±20V | - | 75W (Tc) | 1.2Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
GAN HV
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 40V 200A TO263-7
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 3.5V @ 250µA | 310 nC @ 10 V | 17350 pF @ 25 V | ±20V | - | 375W (Tc) | 1.8mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
||
Renesas Electronics Corporation |
SMALL SIGNAL P-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
OPTIMOSTM5LINEARFET80V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 23A (Ta), 198A (Tc) | 10V | 3.9V @ 115µA | 96 nC @ 10 V | 6800 pF @ 40 V | ±20V | - | 3W (Ta), 217W (Tc) | 2.55mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Infineon Technologies |
AUTOMOTIVE_COOLMOS
|
pacote: - |
Estoque600 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4.5V @ 390µA | 32 nC @ 10 V | 1566 pF @ 400 V | ±20V | - | 160W (Tc) | 125mOhm @ 7.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |